Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2021-06-22 13:50 |
Online |
Online |
[Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] |
SDM2021-23 pp.7-12 |
SDM |
2021-01-28 16:05 |
Online |
Online |
[Invited Talk]
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2020-54 |
There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness flu... [more] |
SDM2020-54 pp.21-24 |
SDM |
2018-06-25 15:35 |
Aichi |
Nagoya Univ. VBL3F |
Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23 |
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] |
SDM2018-23 pp.33-36 |
LQE, CPM, ED |
2017-12-01 12:30 |
Aichi |
Nagoya Inst. tech. |
Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] |
ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
MW, ED |
2017-01-27 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] |
ED2016-103 MW2016-179 pp.35-40 |
SDM |
2016-11-11 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] |
SDM2016-86 pp.43-47 |
CPM |
2015-08-11 11:20 |
Aomori |
|
Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44 |
A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] |
CPM2015-44 pp.67-70 |
SDM, EID |
2014-12-12 16:30 |
Kyoto |
Kyoto University |
Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129 |
SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interfa... [more] |
EID2014-34 SDM2014-129 pp.109-113 |
SDM |
2013-10-18 10:30 |
Miyagi |
Niche, Tohoku Univ. |
Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] |
SDM2013-94 pp.33-36 |
SDM |
2013-06-18 15:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] |
SDM2013-58 pp.71-76 |
SDM |
2012-10-26 09:30 |
Miyagi |
Tohoku Univ. (Niche) |
Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] |
SDM2012-92 pp.15-20 |
SDM |
2011-07-04 10:00 |
Aichi |
VBL, Nagoya Univ. |
Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] |
SDM2011-53 pp.17-22 |
SDM |
2011-07-04 11:40 |
Aichi |
VBL, Nagoya Univ. |
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] |
SDM2011-57 pp.41-46 |
CPM, SDM, ED |
2011-05-20 17:30 |
Aichi |
Nagoya Univ. (VBL) |
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49 |
We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical pr... [more] |
ED2011-36 CPM2011-43 SDM2011-49 pp.185-190 |
OME |
2010-01-12 16:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro Fujii (Chiba Univ.), Hiroyuki Matsui (AIST), Tatsuo Hasegawa (AIST/Univ. of Tokyo), Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ.) OME2009-76 |
Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the chara... [more] |
OME2009-76 pp.51-56 |
SDM |
2009-12-04 15:50 |
Nara |
NAIST |
Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166 |
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] |
SDM2009-166 pp.79-82 |
SDM |
2008-12-05 16:10 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195 |
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] |
SDM2008-195 pp.59-64 |
LQE, ED, CPM |
2008-11-28 11:40 |
Aichi |
Nagoya Institute of Technology |
Device simulation of HfO2/AlGaN/GaN MOSFET
-- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2008-175 CPM2008-124 LQE2008-119 |
Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanis... [more] |
ED2008-175 CPM2008-124 LQE2008-119 pp.115-120 |
SDM, ED |
2008-07-09 12:05 |
Hokkaido |
Kaderu2・7 |
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61 |
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] |
ED2008-42 SDM2008-61 pp.15-19 |
SDM |
2007-06-08 10:55 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2 Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) SDM2007-43 |
By controlling atomic arrangement of La aluminates (LAO, EOT scalable below 0.5 nm)/Si interface with a newly developed ... [more] |
SDM2007-43 pp.65-70 |