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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2010-10-29
10:25		 Nagano   Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102		 Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] CPM2010-102
pp.55-58
CPM 2009-08-11
11:40		 Aomori Hirosaki Univ. Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies.
Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45		 Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] CPM2009-45
pp.61-66
CPM 2008-10-30
13:25		 Niigata Niigata Univ. Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD
Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76		 Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] CPM2008-76
pp.7-12
CPM 2007-11-17
09:50		 Niigata Nagaoka University of Technology Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness
Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117		 Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] CPM2007-117
pp.65-68
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