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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 51  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-06-29
11:55
Tokyo Campus Innovation Center Tokyo Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] SDM2016-37
pp.27-32
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
SDM 2014-06-19
09:30
Aichi VBL, Nagoya Univ. Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime
Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] SDM2014-43
pp.1-5
ED 2013-08-09
09:25
Toyama University of Toyama Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST) ED2013-45
GaSb layer were grown on GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD).The root mean square (RMS) s... [more] ED2013-45
pp.37-42
SDM 2013-06-18
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge
Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] SDM2013-48
pp.25-28
SDM 2013-06-18
11:15
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] SDM2013-50
pp.33-37
SDM, ED
(Workshop)
2012-06-27
15:45
Okinawa Okinawa Seinen-kaikan Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.)
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate ... [more]
SDM 2012-06-21
11:55
Aichi VBL, Nagoya Univ. Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-51
Effective work function control and equivalent oxide thickness (EOT) scaling are the major concerns for implementing met... [more] SDM2012-51
pp.43-46
ED, SDM 2012-02-08
13:25
Hokkaido   Charge distribution near interface of high-k gate insulator in CNFETs
Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] ED2011-156 SDM2011-173
pp.83-87
SDM 2011-07-04
09:00
Aichi VBL, Nagoya Univ. High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2011-50
This paper reports our experimental study for further EOT scaling with small interface state density based on controllin... [more] SDM2011-50
pp.1-5
SDM 2011-07-04
10:00
Aichi VBL, Nagoya Univ. Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods
Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] SDM2011-53
pp.17-22
SDM 2011-07-04
15:40
Aichi VBL, Nagoya Univ. Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure
Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2011-65
We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and X... [more] SDM2011-65
pp.87-92
SDM 2010-11-11
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
ED, SDM 2010-07-02
12:00
Tokyo Tokyo Inst. of Tech. Ookayama Campus The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter
Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) ED2010-92 SDM2010-93
As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials h... [more] ED2010-92 SDM2010-93
pp.177-182
ED, SDM 2010-07-02
12:45
Tokyo Tokyo Inst. of Tech. Ookayama Campus Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET
Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh (Tohoku Univ.) ED2010-95 SDM2010-96
In this paper, we compare the 1/f noise characteristics of High-k/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET by meas... [more] ED2010-95 SDM2010-96
pp.195-198
SDM 2010-06-22
13:45
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] SDM2010-41
pp.43-48
ED 2010-06-18
11:50
Ishikawa JAIST Photo corrosion of Metal Gate Electrodes during Wet
Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) ED2010-46
Wet processes for removing high-k film involve the risk of enhanced galvanic corrosion at the gate electrode level. We f... [more] ED2010-46
pp.69-74
ED, MW 2010-01-14
10:00
Tokyo Kikai-Shinko-Kaikan Bldg InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] ED2009-181 MW2009-164
pp.39-42
SDM 2009-11-13
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface
Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] SDM2009-149
pp.79-84
SDM 2009-10-30
15:15
Miyagi Tohoku University Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-133
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] SDM2009-133
pp.75-76
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