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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2023-01-27
15:05
Kochi Kochi Shoko Kaikan
(Primary: On-site, Secondary: Online)
Colorless, Low-Dielectric, Optically Active Semi-Aliphatic Polyimide with Plant-Derived Isosorbide Backbone
Ririka Sawada, Ryohei Ishige, Shinji Ando (Tokyo Tech) OME2022-77
Seven kinds of polyimides (PIs) incorporating an optically active bio-derived isosorbide (ISS) skeleton in the main chai... [more] OME2022-77
pp.14-17
WPT, EE
(Joint)
2020-10-07
15:55
Online Online Wireless Power Transfer for Waterway-Cruising Ships with 3 Electrodes
Tomohiro Tsujimura, Yangjun Zhang (Ryukoku Univ.), Ikuo Awai (Ryutech corp.) WPT2020-24
The feature of high dielectric constant of water can be expected to have the effect of strengthening the coupling in an ... [more] WPT2020-24
pp.30-35
SCE 2020-09-02
13:10
Online Online Development of Superconducting Filter for Deep Space Exploration New Antenna
Takuma Hayashi, Naoto Sekiya (Univ. of Yamanashi), Takeshi Ohno (Nitsuki,Japan Communication Equipment) SCE2020-1
A high-temperature superconducting (HTS) compact bandpass filter (BPF) for deep space exploration receiving system is de... [more] SCE2020-1
pp.1-4
EMCJ, WPT
(Joint)
2018-06-15
11:25
Nagasaki   Auto Matching Circuit for Wireless Power Transfer System
Masayoshi Kanno (Bifrestec), Hisashi Shigetani, Kentaro Morito (TAIYO YUDEN) WPT2018-16
In the 6.78MHz wireless power transfer system using magnetic resonance, we propose an auto matching circuit by using vol... [more] WPT2018-16
pp.31-36
SDM 2016-06-29
11:55
Tokyo Campus Innovation Center Tokyo Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] SDM2016-37
pp.27-32
AP
(2nd)
2015-01-08
09:40
Overseas PTIT, Ho Chi Minh City, Vietnam 0.5W S-BAND POWER AMPLIFIER: DESIGN AND IMPLEMENTATION
Doan Truong Van, Dong-Anh Doan, Linh Mai, Van-Su Tran, Binh-Duong Nguyen, Long-Binh Mai Quang, Liem Kieu Trung (HCMIU)
Design and implementation of the class-A Power Amplifier (PA) circuit board using GaAs transistor MGF430A and working at... [more]
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
15:05
Kyoto Doshisha University Development of Sophisticated EO Polymers and Fabrication of EO Modulators
Akira Otomo, Isao Aoki, Hideki Miki, Rieko Ueda, Shin-ichiro Inoue, Toshiki Yamada (NICT) PN2013-78 OPE2013-192 LQE2013-178 EST2013-127 MWP2013-98
Polymeric electro-optic (EO) materials have attracted considerable attention because their large EO response and low die... [more] PN2013-78 OPE2013-192 LQE2013-178 EST2013-127 MWP2013-98
pp.281-285
SDM, ED
(Workshop)
2012-06-27
15:45
Okinawa Okinawa Seinen-kaikan Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.)
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate ... [more]
ITE-IDY, EID, IEIJ-SSL, IEE-EDD 2010-01-29
10:50
Fukuoka Kyusyu Univ. (Chikushi Campus) High-precision Measurement of the Threshold Voltage, the Elastic Constants Ratio and the Dielectric Constants Ratio of Liquid Crystal Materials
Yusuke Chiba, Yuji Ohno, Takahiro Ishinabe, Tetsuya Miyashita, Tatsuo Uchida (Tohoku Univ.) EID2009-71
We devised a high-precision method of measuring the threshold voltage and the elastic and dielectric constants ratios of... [more] EID2009-71
pp.99-102
EMCJ 2010-01-21
13:15
Okinawa University of the Ryukyus Estimation of Complex Dielectric Constant in High Frequency by using Scattering Wave
Takashi Komakine, Takahiro Kurosawa (Akita Prefectural R&D Center), Hiroshi Inoue (Akita Univ.) EMCJ2009-104
The dielectric is one of the most important materials for electric devices. To evaluate the permittivity for high freque... [more] EMCJ2009-104
pp.37-40
SDM 2009-06-19
16:20
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3.
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] SDM2009-41
pp.81-85
SDM 2009-06-19
16:50
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx
Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] SDM2009-42
pp.87-92
ICD, SDM 2008-07-17
09:25
Tokyo Kikai-Shinko-Kaikan Bldg. Drain Current Fluctuation in High-k Dielectric p-MOSFETs -- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric --
Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39
Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, R... [more] SDM2008-129 ICD2008-39
pp.7-10
ED 2008-06-13
14:15
Ishikawa Kanazawa University Characterization of N-doped AlSiO film for wide bandgap semiconductors
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] ED2008-25
pp.17-22
SDM 2008-06-10
13:10
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties
Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2008-54
Metal organic chemical vapor deposition (MOCVD) of Pr2O3 films using Pr(EtCp)3 and their electrical properties were inve... [more] SDM2008-54
pp.71-75
SDM, R, ED 2007-11-16
13:00
Osaka   Electrical Characterization of Yttriumaluminate(YAlO)Film
Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] R2007-46 ED2007-179 SDM2007-214
pp.1-6
SDM 2007-10-04
16:55
Miyagi Tohoku Univ. Modulation of Dielectric Constant on Mechanically Strained SrTiO3 MIM Capacitor
Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito (Tohoku Univ.) SDM2007-179
The effect of tensile strain on SrTiO3 high-k insulator was discussed. The tensile strain on SrTiO3 thin films increased... [more] SDM2007-179
pp.23-24
SDM 2006-06-21
14:30
Hiroshima Faculty Club, Hiroshima Univ. Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films
Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)
We observed changes in local leakage currents in La2O3-Al2O3 composite films under constant voltage stress using conduct... [more] SDM2006-45
pp.19-24
RCS, AP, WBS, SR, MW, MoNA
(Joint)
2006-03-03
15:40
Kanagawa YRP -
Futoshi Kuroki, Kazuya Miyamoto (KNCT)
A new transmission media using high permittivity dielectric materials was proposed for mass productivity of dielectric w... [more] MW2005-187
pp.49-52
RCS, AP, WBS, SR, MW, MoNA
(Joint)
2006-03-03
16:00
Kanagawa YRP -
Futoshi Kuroki, Yu-suke Takigawa (KNCT)
Radiation characteristics of printed antennas etched on a high permittivity dielectric substrate with a relative dielect... [more] MW2005-188
pp.53-56
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