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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST)  ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| QIT (2nd) |
2023-05-29 16:30 |
Kyoto | Katsura Campus, Kyoto University | [Poster Presentation]
Single photon emission from single defect center in hexagonal boron nitride by Anti-Stokes excitation Yudai Okashiro, Konosuke Shimazaki, Kazuki Suzuki (Kyoto Univ), Hideaki Tkashima (Chitose Univ), Igor Ahanorovich (UTS), Shigeki Takeuchi (Kyoto Univ) |
Recently, hexagonal boron nitride (hBN) with single defect centers has attracted much attention as a single photon sourc... [more] | |
| ITE-IDY, IEIJ-SSL, EID, SID-JC, IEE-EDD [detail] | 2023-01-27 15:25 |
Online | Online (Zoom) | Low - pressure CVD of hexagonal BN thin films at high temperatures Taiki Oishi, Taira Watanabe, Yuki Tanaka, Katsumi Masuda, Riku Yoshioka, Kirari Masuda, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2022-8 |
To further improve quality of hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire by a low - pressure ch... [more] | EID2022-8 pp.17-20 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| LQE, CPM, ED | 2020-11-27 14:30 |
Online | Online | Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73 |
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] | ED2020-22 CPM2020-43 LQE2020-73 pp.83-86 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-23 13:05 |
Tottori | Tottori Univ. | [Poster Presentation]
CVD growth of h-BN thin films on c-plane sapphire and Si (111) substrates Tomoyasu Nakama, Kazuki Matsusita, Taira Watanabe, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
The hexagonal boron nitride (h-BN) thin films were grown on c-plane sapphire and Si (111) substrates by low-pressure che... [more] | |
| ED | 2019-11-22 12:05 |
Tokyo | Planar-type electron source based on a graphene/h-BN heterostructure Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75 |
In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostr... [more] | ED2019-75 pp.63-66 |
|
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-25 13:30 |
Shizuoka | Shizuoka Univ., Hamamatsu | Thin Film Formation Mechanism of Hexagonal Boron Nitride on c-Plane Sapphire Substrates by Low Pressure CVD Takumi Kawarazaki, Naoki Umehara, Tomoyasu Nakama, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-30 |
The hexagonal boron nitride (h-BN) thin films were grown on a c-plane sapphire substrate by low pressure chemical vapor ... [more] | EID2017-30 pp.1-4 |
| EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] | 2016-01-29 10:45 |
Toyama | Toyama Univ. | Luminescence property of hexagonal boron nitride films grown on sapphire substrates by low-pressure CVD Takaki Shimizu, Naoki Umehara, Atsushi Masuda, Kana Watanabe, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2015-38 |
The luminescence property of the hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire substrates by chemi... [more] | EID2015-38 pp.97-100 |
| EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] | 2015-01-22 15:24 |
Kyoto | Ryukoku University | Grown of hexagonal boron nitride films by CVD for the application of deep ultraviolet light emitters Atsushi Masuda, Naoki Umehara, Takaki Shimizu, Tetsuya Kouno, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ) EID2014-45 |
The hexagonal boron nitride (h-BN) thin films were grown on a c-plane sapphire substrate by chemical vapor deposition us... [more] | EID2014-45 pp.41-44 |
| EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] | 2014-01-24 14:18 |
Niigata | Niigata University | Luminescence property of hexagonal boron nitride films grown by high-temperature CVD Naoki Umehara, Iori Kuwahara, Hye-Young Lee, Tetsuya Kouno, Hiroko Kominami, Yoichiro Nakanishi, Kazuhiko Hara (Shizuoka Univ.) EID2013-14 |
Hexagonal boron nitride (h-BN) thin films have been grown on a c-plane sapphire substrate by atmospheric-pressure chemic... [more] | EID2013-14 pp.25-28 |
| ED, LQE, CPM | 2012-11-29 10:25 |
Osaka | Osaka City University | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94 |
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] | ED2012-66 CPM2012-123 LQE2012-94 p.7 |
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