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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2018-11-08 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2018-66 pp.11-16 |
SDM |
2018-01-30 11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] |
SDM2017-92 pp.5-8 |
SDM |
2017-06-20 16:50 |
Tokyo |
Campus Innovation Center Tokyo |
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] |
SDM2017-30 pp.43-48 |
OME, SDM |
2015-04-30 10:00 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
[Invited Talk]
Formation of high Sn content SiSn films and its band structure
-- Aiming for direct-band-gap semiconductor -- Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9 |
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] |
SDM2015-9 OME2015-9 pp.35-37 |
SDM |
2014-06-19 16:55 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 |
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] |
SDM2014-60 pp.91-95 |
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