IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 35  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2022-01-07
14:05
Osaka CENTRAL ELECTRIC CLUB Device characteristics of organic floating-gate memories based on n-channel polymer transistors
Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] OME2021-48
pp.4-8
SDM 2021-10-21
13:00
Online Online A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications
Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] SDM2021-46
pp.8-11
EID, SDM, ITE-IDY [detail] 2020-12-02
16:30
Online Online Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] EID2020-14 SDM2020-48
pp.54-57
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2018-01-25
14:30
Shizuoka Shizuoka Univ., Hamamatsu Fabrication of Organic Semiconductor Thin Film on Molecular Orientation Insulating Film and Its Effect on TFT Characteristics
Shigeru Okimoto, Yasufumi Iimura (Tokyo Univ. of A&T), Ryuzou Ohno (JSR) EID2017-36
We have focused on the control of molecular alignment of pentacene thin film for improving carrier mobility of pentacene... [more] EID2017-36
pp.25-28
OME, SDM 2017-04-20
16:45
Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
SDM 2015-10-30
15:00
Miyagi Niche, Tohoku Univ. Investigation of stacked HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech) SDM2015-82
In this paper, the effects of HfN1.0 interfacial layer (IL) on the electrical characteristics of HfN1.3 layer formed by ... [more] SDM2015-82
pp.57-62
CPM, OPE, LQE, R, EMD 2015-08-27
11:00
Aomori Aomori-Bussankan-Asupamu Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
pp.9-11
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
ED, CPM, SDM 2015-05-28
17:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator
Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] ED2015-24 CPM2015-9 SDM2015-26
pp.41-44
SDM 2014-10-16
14:50
Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
pp.7-12
SDM 2014-10-16
16:00
Miyagi Niche, Tohoku Univ. Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] SDM2014-87
pp.19-22
OME 2014-10-10
11:20
Osaka Osaka University Nakanoshima Center Emission Properties of Bilayer Organic Light-Emitting Transistors Doped with Phosphorescent Dyes
Hirotake Kajii, Hitoshi Tanaka, Ikuya Ikezoe, Mikio Hara, Takahiro Ohtomo, Yutaka Ohmori (Osaka Univ.) OME2014-39
The fabrication and characteristics of top-gate type bilayer polymer light-emitting transistors with phosphorescent dye ... [more] OME2014-39
pp.9-13
SDM, OME 2014-04-11
10:30
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture
Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus) SDM2014-13 OME2014-13
For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plasti... [more] SDM2014-13 OME2014-13
pp.55-57
SDM 2013-10-18
10:30
Miyagi Niche, Tohoku Univ. Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94
(To be available after the conference date) [more] SDM2013-94
pp.33-36
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
SDM, OME 2012-04-28
11:30
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering
Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17
SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at ... [more] SDM2012-17 OME2012-17
pp.75-77
ED 2012-04-18
14:15
Yamagata Yamagata University High Performance Polymer Thin-Film Transistor with Thermally Curable Fluoro-polymer Gate Insulator
Tsukuru Minamiki (Yamagata Univ.), Masahiro Itoh (AGC), Shinya Oku, Kenjiro Fukuda, Daisuke Kumaki, Makoto Mizukami, Shizuo Tokito (Yamagata Univ.) ED2012-4
Crystallinity and orientation of polymer semiconductor thin-film is strongly dependent to the surface energy of the subs... [more] ED2012-4
pp.15-18
ED, SDM 2012-02-08
13:25
Hokkaido   Charge distribution near interface of high-k gate insulator in CNFETs
Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] ED2011-156 SDM2011-173
pp.83-87
ED, SDM 2012-02-08
13:50
Hokkaido   Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] ED2011-157 SDM2011-174
pp.89-93
SDM 2011-10-20
15:20
Miyagi Tohoku Univ. (Niche) Effect of Si surface roughness on electrical characteristics of HfON gate insulator
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-100
In this paper, the effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by the ele... [more] SDM2011-100
pp.17-20
 Results 1 - 20 of 35  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan