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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2016-12-12 14:40 |
Kyoto |
Kyoto University |
Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-61 CPM2016-94 LQE2016-77 |
Raman scattering spectroscopy and infrared reflectance spectroscopy were performed on GaN free-standing substrates with ... [more] |
ED2016-61 CPM2016-94 LQE2016-77 pp.21-26 |
LQE, ED, CPM |
2014-11-28 16:00 |
Osaka |
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Effects of thermal cleaning on surface of bulk GaN substrates Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124 |
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] |
ED2014-96 CPM2014-153 LQE2014-124 pp.111-115 |
CPM, LQE, ED |
2013-11-28 14:45 |
Osaka |
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Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal) ED2013-71 CPM2013-130 LQE2013-106 |
We fabricated and characterized low-Si-doped thick GaN Schottky diodes on GaN substrates with varied C-doping concentrat... [more] |
ED2013-71 CPM2013-130 LQE2013-106 pp.35-38 |
ED, MW |
2012-01-11 14:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] |
ED2011-125 MW2011-148 pp.35-40 |
CPM, LQE, ED |
2010-11-12 10:50 |
Osaka |
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Vertical GaN Diode on GaN Free-Standing Substrate Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112 |
We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] |
ED2010-156 CPM2010-122 LQE2010-112 pp.63-66 |
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