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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2015-07-25 11:05 |
Ishikawa | IT Business Plaza Musashi 5F | Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS)  ED2015-45 |
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] | ED2015-45 pp.45-49 |
| EMD | 2014-12-19 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Degradation phenomenon of electrical contacts by using a micro-sliding mechanism and a hammering oscillation mechanism
-- The effect of adding quasi-impulsive oscillation to micro-sliding -- Shin-ichi Wada, Hiroki Iwamoto, Keiji Koshida, Hiroaki Kubota (TMC), Koichiro Sawa (Nippon Inst. of Tech.) EMD2014-97 |
Authors have designed and developed a hammering oscillation system which gives transient external-force repeatedly to el... [more] | EMD2014-97 pp.13-18 |
| SDM, EID | 2014-12-12 10:15 |
Kyoto | Kyoto University | Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] | EID2014-14 SDM2014-109 pp.7-11 |
| OFT, OCS (Joint) |
2013-08-22 14:50 |
Hokkaido | Record Low Loss, Record High FOM Optical Fiber with Manufacturable Process Tetsuya Haruna, Masaaki Hirano, Yoshiaki Tamura, Takehiko Kawano, Satoshi Ohnuki, Yoshinori Yamamoto, Yasushi Koyano, Takashi Sasaki (SEI) OCS2013-38 |
We newly develop a pure-silica-core fiber (PSCF) with the record-low loss of 0.149 dB/km and an appropriately enlarged e... [more] | OCS2013-38 pp.11-16 |
|
| EMCJ, EMD | 2013-07-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Degradation Phenomenon of Electrical Contacts using a Hammering Oscillation Mechanism or a Micro-Sliding Mechanism
-- A fundamental study on the performance of the hammering oscillation mechanism (28) -- Shin-ichi Wada, Keiji Koshida, Saindaa Norovling, Hiroaki Kubota (TMC), Koichiro Sawa (NIT) EMCJ2013-39 EMD2013-24 |
Authors have studied the effect on electrical contacts by actual micro-oscillation using the hammering oscillation mecha... [more] | EMCJ2013-39 EMD2013-24 pp.1-6 |
| EMD, CPM, OME | 2013-06-21 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Degradation Phenomenon of Electrical Contacts by using a Hammering Oscillating Mechanism or a Micro-Sliding Mechanism
-- A fundamental study on the performance of the hammering oscillating mechanism (27) -- Shin-ichi Wada, Keiji Koshida, Naoki Masuda, Kunio Yanagi, Hiroaki Kubota (TMC), Koichiro Sawa (NIT) EMD2013-17 CPM2013-32 OME2013-40 |
Authors have studied the influence on electrical contacts by actual micro-oscillation using some oscillating mechanisms ... [more] | EMD2013-17 CPM2013-32 OME2013-40 pp.55-60 |
| EMD | 2012-12-21 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Degradation Phenomenon of Electrical Contacts using hammering oscillating mechanism and micro-sliding mechanism
-- A fundamental study on the performance of the hammering oscillating mechanism (26) -- Shin-ichi Wada, Keiji Koshida, Saindaa Norovling (TMC), Naoki Masuda (TCT), Kunio Yanagi, Hiroaki Kubota (TMC), Masashi Terasaki (TCT), Koichiro Sawa (NIT) EMD2012-95 |
Authors have studied the influence on electrical contacts by actual micro-oscillation using some oscillating mechanisms ... [more] | EMD2012-95 pp.27-32 |
| SDM | 2011-12-16 16:20 |
Nara | NAIST | Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146 |
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] | SDM2011-146 pp.77-82 |
| ED | 2011-12-14 13:40 |
Miyagi | Tohoku University | Monte Carlo Simulations of InGaAs/InAs/InGaAs Composite Channel HEMTs
-- Band Structure of Strained InAs and Self-Consistent Analysis of 2DEG -- Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2011-101 |
To achieve high-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is usedas a channel. In t... [more] | ED2011-101 pp.7-12 |
| SDM | 2010-12-17 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 |
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] | SDM2010-185 pp.1-6 |
| SDM, ED | 2009-06-24 14:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Theoretical study on graphene field-effect transistors Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST) ED2009-62 SDM2009-57 |
Graphene is one of the most attractive materials for“beyond CMOS” electronics. We investigate graphene-layer composition... [more] | ED2009-62 SDM2009-57 pp.53-58 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| SDM [detail] | 2008-11-14 16:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] | SDM2008-183 pp.83-88 |
| SDM | 2008-06-09 15:50 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | HoleSubband Dispersion in Si inversion Layers Sakura N. Takeda, Makoto Morita, Ｔａkuya Ohsugi, Yohei Tanigawa, Hiroshi Daimon (NAIST) SDM2008-44 |
Subband dispersion quantized in Si inversion layer was measured by Angle-resolved photoemission spectroscopy. The dispe... [more] |
SDM2008-44 pp.13-16 |
| SDM | 2008-06-09 16:50 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46 |
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] | SDM2008-46 pp.23-27 |
| OME | 2007-05-18 13:25 |
Tokyo | Denki-Club | Potential Fluctuation and its Origin in Crystalline Domain of Pentacene Thin-Film Transistors Noboru Ohashi, Hiroshi Tomii, Ryousuke Matsubara, Masakazu Nakamura, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ.) OME2007-10 |
Surface topography and potential distribution of a thin-film transistor (TFT) with a poly-crystalline pentacene active l... [more] | OME2007-10 pp.5-9 |
| OME, EID | 2007-03-05 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Lateral carrier conduction in pentacene polycrystalline films
-- The hole transport barrier and the effective mass in crystals -- Ryousuke Matsubara (Chiba Univ.), Masakazu Nakamura (Chiva Univ.), Kazuhiro Kudo (Chiba Univ.) |
Characteristics of organic thin-film-transistors (OTFTs) are limited by various effects originated from the electrode. W... [more] | OME2006-133 EID2006-90 pp.7-11 |
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