Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OME |
2024-01-16 15:30 |
Online |
Online |
Characterization of inverse structure OLED devices with n-type doped electron transport layer Kakeru Miyazaki, Masahiro Morimoto, Shigeki Naka (Univ. of toyama) OME2023-81 |
Organic semiconductors have extremely low carrier density and are classified as insulators in terms of conductivity. n-t... [more] |
OME2023-81 pp.18-21 |
ED, MWPTHz |
2023-12-22 14:20 |
Miyagi |
RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] |
ED2023-63 MWPTHz2023-73 pp.46-51 |
LQE, ED, CPM |
2023-11-30 15:20 |
Shizuoka |
|
Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59 |
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] |
ED2023-19 CPM2023-61 LQE2023-59 pp.25-30 |
MRIS, CPM, ITE-MMS, OME [detail] |
2023-10-26 13:40 |
Niigata |
Niigata Univ. Ekiminami Campus (Primary: On-site, Secondary: Online) |
Effects of Sn on K0.48Na0.52NbO3-Bi0.5Na0.5SnO3-Bi0.5Na0.5ZrO3 ceramics Reika Ogoshi, Noriko Bamba (Shinshu Univ.) MRIS2023-8 CPM2023-42 OME2023-29 |
Potassium sodium niobate (KNN) is one of the well-known lead-free piezoelectric materials, and various multi-element sol... [more] |
MRIS2023-8 CPM2023-42 OME2023-29 pp.1-5 |
MRIS, CPM, ITE-MMS [detail] |
2022-10-28 11:10 |
Nagano |
Shinshu Univ. (Primary: On-site, Secondary: Online) |
Microstructure and piezoelectricity of multi-elements doped K0.45Na0.55NbO3 ceramics Kandai Nagata, Noriko Bamba (Shinshu Univ.) MRIS2022-16 CPM2022-47 |
Potassium sodium niobate (KNN) is one of the most widely studied lead-free piezoelectric materials. In this study, multi... [more] |
MRIS2022-16 CPM2022-47 pp.43-47 |
OME |
2022-03-26 15:20 |
Tokyo |
Seikei Univ, (Primary: On-site, Secondary: Online) |
Study on Li Pre-doping Technology to Si Electrode using Li-naphthalenide Solutions Yusuke Himata, Hikaru Enomoto, Shunya Ishii, Mika Fukunishi, Tatsuo Horiba, Morihiro Saito (Seikei Univ.) OME2021-70 |
In recent years, next-generation batteries such as Li-S and Li-O2 systems have been strongly demanded for the power sour... [more] |
OME2021-70 pp.17-22 |
AP |
2021-03-26 11:35 |
Online |
Online |
[Invited Talk (Young Researcher)]
Study of optically transparent antennas based on graphene Shohei Kosuga (Aoyama Gakuin Univ./JSPS Research Fellow), Shunichiro Nagata, Sho Kuromatsu, Ryosuke Suga, Takeshi Watanabe, Osamu Hashimoto, Shinji Koh (Aoyama Gakuin Univ.) AP2020-137 |
We focused on graphene, a one-atom-thick two dimensional carbon sheet, as an electrode material for optically transparen... [more] |
AP2020-137 pp.31-36 |
LQE, CPM, ED |
2020-11-26 11:15 |
Online |
Online |
Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] |
ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24 10:05 |
Tottori |
Tottori Univ. |
[Poster Presentation]
Effect of transition metal addition on luminescent properties of YAG:Cephosphor Michio Arimura, Tomohiro Kwashima, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
YAG: Ce phosphor widely accepted as a phosphor for white LEDs was prepared by co-doped a transition metal, and the emiss... [more] |
|
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24 11:05 |
Tottori |
Tottori Univ. |
[Poster Presentation]
Influence of Bi codoping to excitation characteristics in tetragonal Mg2TiO4:Mn4+ deep red phosphors Motoshi Suhama, Yusuke Ueno, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.) EID2019-15 |
In this study, the Bi3+ codoping to Mg2TiO4:Mn4+ has been attempted. In addition, a low temperature annealing at 625°C f... [more] |
EID2019-15 pp.125-128 |
CPM |
2019-11-07 15:25 |
Fukui |
Fukui univ. |
Nitrogen doping to ZnO films in a catalytic reaction assisted chemical vapor deposition Ryuta Iba, Hiroki Kambayashi, Yuki Adachi (NUT), Koichiro Oishi, Hironori Katagiri (NITNC), Kanji Yasui (NUT) CPM2019-47 |
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] |
CPM2019-47 pp.15-19 |
MRIS, ITE-MMS, IEE-MAG |
2019-10-18 14:15 |
Fukuoka |
Kyushu University (Nishijin Plaza) |
Study on electrode formation for spin injection into singlecrystalline diamond Eslam Abubakr, Takuya Sakai, Abdelrahman Zkria (KU), Yuki Katamune (KIT), Shinya Ohmagari (AIST), Kaname Imokawa, Hiroshi Ikenoue (KU), Ken-ichiro Sakai (Kurume Coll), Tsuyoshi Yoshitake (KU) MRIS2019-37 |
Singlecrystalline diamond is a candidate as long-distance spin transport materials. Since diamond possesses a wide bandg... [more] |
MRIS2019-37 pp.119-122 |
SDM |
2019-06-21 11:20 |
Aichi |
Nagoya Univ. VBL3F |
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26 |
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] |
SDM2019-26 pp.5-9 |
SDM |
2019-01-29 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas) SDM2018-86 |
Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping techniq... [more] |
SDM2018-86 pp.21-26 |
ED, LQE, CPM |
2018-11-30 11:15 |
Aichi |
Nagoya Inst. tech. |
Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] |
ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
EE, CPM, OME |
2018-11-22 09:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effect of anion composition on oxide ion conductionof F-doped B-type carbonatedapatite Jun Takahata, Yasuhito Sugano, Yumi Tanaka (TUS) EE2018-34 CPM2018-62 OME2018-22 |
Based on our previous finding that the B-type carbonate apatite (BCA; [Ca10-xNa2x/3][(PO4)6-x(CO3)x] [(H2O)x(OH)2-x/3]) ... [more] |
EE2018-34 CPM2018-62 OME2018-22 pp.47-49 |
CPM, IEE-MAG |
2018-11-01 13:25 |
Niigata |
Machinaka campus Nagaoka |
Effect on nitrogen doping to ZnO films of nitrogen radical supply generated on Ir catalyst surface Taro Saito, Yuki Adachi, Ryuta Iba, Shotaro Ono (Nagaoka Univ. of Tech.), Koichiro Oishi, Hironori Katagiri (Nat. Inst. Tech., Nagaoka Coll.), Kanji Yasui (Nagaoka Univ. of Tech.) CPM2018-42 |
The large bandgap and large exciton binding energy of ZnO have recently stimulated intensive research into optoelectroni... [more] |
CPM2018-42 pp.5-9 |
SDM |
2018-10-17 15:20 |
Miyagi |
Niche, Tohoku Univ. |
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] |
SDM2018-54 pp.11-14 |
OME |
2017-11-17 15:40 |
Osaka |
Osaka Univ. Nakanoshima Center |
Electrochemical properties of capacitor using the polyaniline as a cathode Kazuyuki Kawahara, Shintaro Kawanami, Shoya Ido, Hideki Kido, Toshiyuki Osawa (Osaka Inst. of Tech.) OME2017-32 |
An energy densities of the capacitor which used PANI thick film for cathode and anode (18mAh/g) undergoes influence of "... [more] |
OME2017-32 pp.27-31 |
SDM |
2017-10-25 16:00 |
Miyagi |
Niche, Tohoku Univ. |
Nanoscale conformal doping technology by spin on diffusion source Tetsuro Kinoshita, Shunichi Mashita, Takuya Ohashi, Yoshihiro Sawada, Yohei Kinoshita, Satoshi Fujimura (TOK) SDM2017-53 |
We developed a coating material which can form nanoscale conformal film on the wafer with 3D structure. In this study, c... [more] |
SDM2017-53 pp.21-24 |