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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 66  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2024-02-29
13:45
Yamagata Yamagata University
(Primary: On-site, Secondary: Online)
Effects of O doping on Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa (Hirosaki Univ.) CPM2023-105
We have prepared silicon-, nitrogen- and oxygen-doped diamond-like carbon (Si–N–O-DLC) films via plasma-enhanced chemica... [more] CPM2023-105
pp.38-41
MW 2024-02-29
14:30
Okayama Okayama Prefectural University
(Primary: On-site, Secondary: Online)
Application of Microwave Magnetic Field to Nanodiamonds with a Parallel Plate Line and Transitions to a Coaxial line
Koki Kimura, Minoru Sanagi (Okayama Univ.) MW2023-181
Temperature distributions in living cells can be measured with fluorescent nanodiamonds applied microwave magnetic field... [more] MW2023-181
pp.37-42
ED, MW 2024-01-25
15:55
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Development of GaN HEMT using a diamond substrate as a heat spreader
Yusuke Shirayanagi (Mitsubishi Electric/Kumamoto Univ.), Shingo Tomohisa (Mitsubishi Electric), Keiji Kasamura, Hiroki Toyoda (Kumamoto Univ.), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Akihisa Kubota (Kumamoto Univ.), Takashi Takenaga (Mitsubishi Electric) ED2023-69 MW2023-161
1-inch size GaN-on-Diamond high electron mobility transistors (GoD HEMTs) has been successfully fabricated using surface... [more] ED2023-69 MW2023-161
pp.15-18
MRIS, CPM, ITE-MMS, OME [detail] 2023-10-27
10:30
Niigata Niigata Univ. Ekiminami Campus
(Primary: On-site, Secondary: Online)
Mechanical properties and heat resistance of Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yuya Sasaki, Hideki Nakazawa (Hirosaki Univ.) MRIS2023-17 CPM2023-51 OME2023-38
Silicon- and nitrogen-doped diamond-like carbon (Si–N–DLC) films have been deposited by plasma-enhanced chemical vapor d... [more] MRIS2023-17 CPM2023-51 OME2023-38
pp.33-36
QIT
(2nd)
2022-05-30
13:30
Online Online [Poster Presentation] Creation of single silicon-vacancy centers in nanodiamonds by ion implantation
Kazuki Suzuki, Konosuke Shimazaki, Hideaki Takashima (Kyoto Univ.), Hiroshi Abe, Ohshima Takeshi (QST), Shigeki Takeuchi (Kyoto Univ.)
Color centers in nanodiamonds are expected to have applications in quantum technology. Among them, silicon vacancy cente... [more]
SDM 2022-02-04
13:40
Online Online [Invited Talk] 3D Integration Technology for Quantum Computer based on Diamond Spin Qubits
Ryoichi Ishihara, Jeffrel Hermias, Shuichang Yu, King Y. Yu, Ye Li, Maurice van der Maas, Salahuddin Nur (TUDelft), Toshiki Iwai, Tetsuya Miyatake, Kenichi Kawaguchi, Yoshiyasu Doi, Shintaro Sato (Fujitsu) SDM2021-79
Quantum computer chip based on spin qubits in diamond uses modules that are entangled with on-chip optical links. This e... [more] SDM2021-79
pp.21-26
CPM 2021-10-27
13:20
Online Online Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2021-26
We have deposited silicon and nitrogen doped diamond-like carbon (Si–N–DLC) films by radio frequency plasma-enhanced che... [more] CPM2021-26
pp.23-28
QIT
(2nd)
2021-05-24
13:30
Online Online [Poster Presentation] Designing microwave antenna for the optically detected magnetic resonance in NV centers toward biological applications
Keisuke Oshimi (Osaka City Univ./Okayama Univ.), Yushi Nishimura, Eiji Shikoh, Yuka Takezawa, Eriko Kage-Nakadai (Osaka City Univ.), Masazumi Fujiwara (Osaka City Univ./Okayama Univ.), Yoshio Teki (Osaka City Univ.)
It has been reported that using fluorescent nanodiamonds (NDs) with nitrogen vacancy (NV) centers enables to obtain vari... [more]
OME 2019-12-26
11:05
Okinawa Okinawaken Seinenkaikan Preparation of diamond electrodes and electrolyzed sulfuric acid technology
Emi Shindou (CIT), Tatsuo Nagai (Micro Ace), Yukihiro Sakamoto (CIT) OME2019-50
Boron-doped diamond was synthesized with trimethyl borate B(CH3O)3 as boron source using a microwave plasma CVD apparatu... [more] OME2019-50
pp.9-12
ED 2019-11-22
10:25
Tokyo   Spectroscopic analysis of electron emission from n-type diamond oxidized surface
Tomoaki Masuzawa, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Ken Okano (ICU), Takatoshi Yamada (AIST) ED2019-71
Mechanism of electron emission was investigated for oxidized surfaces of phosphorus(P)-doped diamonds. Ultraviolet photo... [more] ED2019-71
pp.47-49
CPM 2019-11-07
15:00
Fukui Fukui univ. Annealing effects on the properties of nitrogen doped DLC films
Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.) CPM2019-46
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] CPM2019-46
pp.9-14
MRIS, ITE-MMS, IEE-MAG 2019-10-18
14:15
Fukuoka Kyushu University (Nishijin Plaza) Study on electrode formation for spin injection into singlecrystalline diamond
Eslam Abubakr, Takuya Sakai, Abdelrahman Zkria (KU), Yuki Katamune (KIT), Shinya Ohmagari (AIST), Kaname Imokawa, Hiroshi Ikenoue (KU), Ken-ichiro Sakai (Kurume Coll), Tsuyoshi Yoshitake (KU) MRIS2019-37
Singlecrystalline diamond is a candidate as long-distance spin transport materials. Since diamond possesses a wide bandg... [more] MRIS2019-37
pp.119-122
OME, IEE-DEI 2019-07-05
15:45
Niigata   Formation and electron injection characteristics of diamond nanoparticle adsorped layer
Yuriko Sugimoto (Tokyo Univ. Agricul. & Technol.), Fujio Ohishi (Kanagawa Univ.), Kuniaki Tanaka, Hiroaki Usui (Tokyo Univ. Agricul. & Technol.) OME2019-12
Nanometer-thick films of diamond nanoparticles (DNPs) were prepared by adsorbing DNPs on aluminum surface by either elec... [more] OME2019-12
pp.17-20
CPM, IEE-MAG 2018-11-02
14:25
Niigata Machinaka campus Nagaoka Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] CPM2018-52
pp.99-104
OFT 2018-10-11
14:00
Miyagi Touhoku Univ. [Poster Presentation] Development of polishing machine using thermoplastic resin bond wheel for end face of optical connector
Yuichiro Tsuda, Yuki Kano, Kenta Nara, Hiroshi Matsuura (Tohoku Gakuin Univ.) OFT2018-17
(To be available after the conference date) [more] OFT2018-17
pp.19-22
CPM 2018-08-09
14:30
Aomori Hirosaki Univ. Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] CPM2018-8
pp.1-6
OME, IEE-DEI 2018-07-20
11:15
Niigata   Preparation and Electronic Application of Diamond Nanoparticle Thin Flms
Yuriko Sugimoto (Tokyo Univ. Agricul. & Technol.), Fujio Ohishi (Kanagawa Univ.), Kuniaki Tanaka, Hiroaki Usui (Tokyo Univ. Agricul. & Technol.) OME2018-10
Thin films of diamond nanoparticles (DNP) were prepared by electrophoretic deposition. It was possible to deposit very ... [more] OME2018-10
pp.27-31
SDM 2018-06-25
13:30
Aichi Nagoya Univ. VBL3F [Invited Lecture] Inversion channel diamond MOSFET -- Formation of diamond MOS interface by wet annealing --
Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.) SDM2018-20
We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion ... [more] SDM2018-20
pp.19-22
SDM 2018-06-25
14:00
Aichi Nagoya Univ. VBL3F [Invited Lecture] Progress in Diamond Field Effect Transistors
Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.) SDM2018-21
2 dimensional hole gas at diamond and insulator interface is used for field effect transistor (FET). High voltage (~2000... [more] SDM2018-21
pp.23-28
OME 2017-12-01
09:20
Saga Sun Messe Tosu High efficiency processing and its processing mechanism of large area diamond substrate due to plasma fusion CMP
Hidetoshi Takeda (Namiki Precision Jewel Co., Ltd.), Toshiro Doi (Kyushu Univ.), Seong Woo Kim (Namiki Precision Jewel Co., Ltd.), Hideo Aida (Nagaoka Univ. Tech.), Masaharu Shiratani (Kyushu Univ.) OME2017-35
SiC, GaN and Diamond are known as next generation semiconductor materials, but on the other hand, these are known as ult... [more] OME2017-35
pp.1-6
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