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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 18件中 1~18件目  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-22
14:40
Shizuoka Shizuoka Univ. (Hamamatsu) Evaluation of III-V nitride by photothermal deflection spectroscopy
Masatomo Sumiya (NIMS) ED2019-58 CPM2019-77 LQE2019-101
In order to improve the performance of power electronic and photo-passive devices, it is important to evaluate the in-ga... [more] ED2019-58 CPM2019-77 LQE2019-101
pp.107-110
LQE, OPE, CPM, EMD, R 2019-08-22
16:45
Miyagi   [Invited Talk] 3D Flash Memory Cell Reliability
Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory) R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31
As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dim... [more] R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31
pp.35-38
WIT, IPSJ-AAC 2018-03-09
15:10
Ibaraki Tsukuba University of Technology Image modification for color defectives by mapping the position on confusion lines to pixel blinking
Ryuya Yamada, Naoya Ohta (Gunma Univ.), Yasushi Kanazawa (Toyohashi Univ. of Tech.) WIT2017-71
Many image processing methods have been studied by which color defectives can recognize differences of colors that origi... [more] WIT2017-71
pp.67-72
MW
(2nd)
2017-06-14
- 2017-06-16
Overseas KMUTT, Bangkok, Thailand Monopole MIMO Antenna using Decagon Fractal Patch Resonator and Defected Ground Plane for WLAN application
Nattapong Duangrit (KMUTNB), Chatchai Chokchai (RMUTT), Prayoot Akkaraekthalin (KMUTNB)
This paper presents a monopole MIMO antenna using two decagon fractal patches and defected ground plane for WLAN applica... [more]
WIT 2016-03-04
16:40
Ibaraki Tusukuba Univ. of Tech.(Tsukuba) Image processing for color defectives by mapping the position on confusion lines to pixel blinking characteristics
Ryuya Yamada, Takaaki Koshi, Naoya Ohta (Gunma Univ), Yasushi Kanazawa (Toyohashi Tech of Univ) WIT2015-97
Many image processing methods have been studied by which color defectives become recognize differ-
ences of colors that... [more]
WIT2015-97
pp.47-52
MSS, SS 2015-01-26
14:45
Tottori   Just-In-Time Defect Prediction Tool anko
Shutaro Tanaka, Takafumi Fukushima, Kazuhiro Yamashita, Yasutaka Kamei, Naoyasu Ubayashi (Kyushu Univ.) MSS2014-72 SS2014-36
Some previous studies show that defect prediction at the change-level (i.e., defect prediction for a commit to version c... [more] MSS2014-72 SS2014-36
pp.19-24
CPM, ED, SDM 2014-05-29
14:20
Aichi   Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] ED2014-41 CPM2014-24 SDM2014-39
pp.113-118
SS, KBSE 2013-07-26
13:10
Hokkaido   Application to Development Site of Model Checking Technology -- Discovery of Inconsistency of Specification and Source Code --
Yoshitaka Aoki (Nihon Unisys), Saeko Matsuura (Shibaura Inst. of Tech.) SS2013-28 KBSE2013-28
Software programs often include many defects that are not easy to detect because of the developers’ mistakes, misunderst... [more] SS2013-28 KBSE2013-28
pp.91-96
ED, LQE, CPM 2012-11-29
11:05
Osaka Osaka City University Applicationo of III-V nitride films to photovoltaic device
Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS) ED2012-67 CPM2012-124 LQE2012-95
We have proposed the solar cell system composing III-V nitride film with wider band gap. III-V nitride solar cell is mec... [more] ED2012-67 CPM2012-124 LQE2012-95
pp.9-12
ED 2012-07-26
15:25
Fukui Fukui University Effect of ICP Etching on p-type GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] ED2012-45
pp.21-24
ED 2012-07-26
15:50
Fukui Fukui University Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts
Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] ED2012-46
pp.25-30
CPSY, DC, IPSJ-SLDM, IPSJ-EMB [detail] 2012-03-03
14:30
Miyagi   Structure Search of Cascaded TMR for Pipelined Processors Based on Genetic Algorithm
Masayuki Arai, Hajime Ide, Kazuhiko Iwasaki (Tokyo Metro. Univ.) CPSY2011-94 DC2011-98
In this paper we discuss on the application of TMR (Triple Modular Redundancy) to every stage of pipelined processors, a... [more] CPSY2011-94 DC2011-98
pp.211-217
SDM 2011-12-16
11:20
Nara NAIST Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Curr... [more] SDM2011-136
pp.23-28
SSS 2011-11-17
14:20
Tokyo Kikai-Shinko-Kaikan Bldg Evaluation for Fukushima 1 Nuclear Power Plant Accident, and Lessons from the evaluation in terms of Product Safety
Takatoshi Ikeda (former Hitachi) SSS2011-15
I examined the Fukushima 1 nuclear power plant accident in terms of product safety. After estimating the safety integrit... [more] SSS2011-15
pp.5-8
SDM 2009-12-04
10:00
Nara NAIST Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-153
In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were ... [more] SDM2009-153
pp.11-16
SDM 2009-12-04
17:10
Nara NAIST Characterization of defects in NiO thin films for ReRAM
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-170
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] SDM2009-170
pp.97-100
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2009-12-03
13:45
Kochi Kochi City Culture-Plaza A Yield Model with Testability and Repairability
Yujiro Amano, Yuki Yoshikawa, Hideyuki Ichihara, Tomoo Inoue (Hiroshima City Univ.) VLD2009-54 DC2009-41
For deep-submicron technology, the increase in transitive and permanent faults of LSIs is a critical problem due to the ... [more] VLD2009-54 DC2009-41
pp.89-94
ED 2007-06-16
09:30
Toyama Toyama Univ. [Invited Talk] Current transport mechanism of metal/p-GaN contacts
Kenji Shiojima (Fukui Univ.) ED2007-41
This paper will review the basic understanding of current transport mechanism of metal/p-GaN contacts. We have demonstr... [more] ED2007-41
pp.57-60
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