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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2012-05-18
11:15		 Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33		 Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
ED 2007-06-16
09:30		 Toyama Toyama Univ. [Invited Talk] Current transport mechanism of metal/p-GaN contacts
Kenji Shiojima (Fukui Univ.) ED2007-41		 This paper will review the basic understanding of current transport mechanism of metal/p-GaN contacts. We have demonstr... [more] ED2007-41
pp.57-60
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