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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-25 10:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)  ED2022-40 CPM2022-65 LQE2022-73 |
The carrier dynamics in active layers of III-nitride-based optical devices, has not been fully understood, yet. We belie... [more] | ED2022-40 CPM2022-65 LQE2022-73 pp.73-76 |
| ED, CPM, LQE | 2021-11-25 13:30 |
Online | Online | Indium Composition Dependence of Internal Quantum Efficiency in InGaN Quantum-Wells Measured by Simultaneous Microscopic Photoacoustic and Photoluminescence Spectroscopy Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2021-20 CPM2021-54 LQE2021-32 |
Accurate estimation of internal quantum efficiency (IQE) is necessary for comprehensive understanding of the carrier dyn... [more] | ED2021-20 CPM2021-54 LQE2021-32 pp.29-32 |
| ED, CPM, SDM | 2015-05-29 09:55 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32 |
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] | ED2015-30 CPM2015-15 SDM2015-32 pp.71-76 |
| OME | 2014-10-10 10:55 |
Osaka | Osaka University Nakanoshima Center | Photo-excited carrier transport of organic thin-film solar cell Mitsuru Inada, Nozomi Isobe, Tomoki Miyake, Shouzou Yamanaka, Tadashi Saitoh (Kansai Univ.) OME2014-38 |
We investigate photo-excited carrier lifetime of CuPc/C60-based organic thin-film solar cell to reveal the carrier trans... [more] | OME2014-38 pp.5-8 |
| SDM, ED, CPM | 2013-05-17 14:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40 |
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] | ED2013-33 CPM2013-18 SDM2013-40 pp.93-98 |
| SDM | 2012-12-07 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2012-115 |
Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In t... [more] | SDM2012-115 pp.1-5 |
| ED, MW | 2012-01-11 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Photon-recycling GaN p+n Diodes Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148 |
Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] | ED2011-125 MW2011-148 pp.35-40 |
| CPM, SDM, ED | 2011-05-19 10:25 |
Aichi | Nagoya Univ. (VBL) | Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 |
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] | ED2011-4 CPM2011-11 SDM2011-17 pp.15-20 |
| CPM, SDM, ED | 2011-05-19 10:50 |
Aichi | Nagoya Univ. (VBL) | Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18 |
3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is dif... [more] | ED2011-5 CPM2011-12 SDM2011-18 pp.21-26 |
| SDM | 2008-12-05 15:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology) SDM2008-193 |
Changes in electrical properties of metal-oxide-semiconductor irradiated by plasma or UV laser are reported. Capacitance... [more] | SDM2008-193 pp.49-54 |
| CPM, ED, SDM | 2008-05-16 15:05 |
Aichi | Nagoya Institute of Technology | Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40 |
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] | ED2008-20 CPM2008-28 SDM2008-40 pp.95-100 |
| EMT, LQE, OPE, PN | 2008-01-29 09:30 |
Osaka | Influence of Band Offset on Carrier Lifetime in Quantum Well Lasers Shinichi Kakuda, Hideaki Nishimura, Masashi Tanaka, Wataru Susaki (OECU) PN2007-55 OPE2007-163 LQE2007-141 |
Carrier recombination lifetime of various kinds of separate-confinement quantum well lasers formed on GaAs and InP subst... [more] | PN2007-55 OPE2007-163 LQE2007-141 pp.101-106 |
|
| CPM | 2007-08-10 11:45 |
Yamagata | Yamagata Univ. | Characterization of aSi films and device simulation for solar cells Takahiko Suzuki, Takehisa Shimakawa, Fumihiko Hirose (Yamagata Univ.) CPM2007-49 |
We simulated device characteristics of amorphous Si solar cells for optimizing its solar energy conversion efficiency wi... [more] | CPM2007-49 pp.69-73 |
| ICD, ITE-IST | 2007-07-26 16:05 |
Hyogo | A 356-µW, 433-MHz, Rail-to-Rail Voltage Amplifier with Carrier Sensing Function for Wireless Sensor Networks Hyeokjong Lee, Shinji Mikami, Takashi Takeuchi, Masumi Ichien, Hiroshi Kawaguchi, Chikara Ohta, Masahiko Yoshimoto (Kobe Univ.) ICD2007-50 |
We describe a low-power voltage amplifier that is suitable for RF (radio frequency) receivers in a WSN (wireless sensor ... [more] | ICD2007-50 pp.77-82 |
|
| ED, SDM | 2007-06-25 15:55 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more] | |
| SDM, ED, CPM | 2007-05-24 14:50 |
Shizuoka | Shizuoka Univ. | Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) |
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more] | |
| ED, CPM, SDM | 2006-05-19 14:00 |
Aichi | VBL, Toyohashi University of Technology | Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.) |
In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e... [more] | ED2006-38 CPM2006-25 SDM2006-38 pp.101-106 |
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