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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME 2017-12-28
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Investigation of interactions between Pt atom and carbon supports by a first-principles calculation
Yuta Nakajo (Tokyo Univ. Science), Teruyasu Mizoguchi (The University of Tokyo), Yasuhito Sugano, Masaru Yoshitake, Yumi Tanaka (Tokyo Univ. Science) OME2017-52		 To estimate interactions between carbon supports and Pt, which affects the catalytic activity of carbon-supported Pt nan... [more] OME2017-52
pp.15-18
ED, SDM, CPM 2012-05-18
11:15		 Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33		 Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
SDM, ED 2008-07-11
15:05		 Hokkaido Kaderu２・７ Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion
Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.) ED2008-106 SDM2008-125		 A SiNx/GaN structure was prepared by ECR-CVD, and annealed at 1000 oC for 2 hours in N2 ambient. An XPS result showed th... [more] ED2008-106 SDM2008-125
pp.347-350
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