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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2024-02-29 10:45 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Fabrication and Evaluation of Aluminum Nitride Thin Film Using Microwave Plasma-Assisted Low-Temperature Atomic Layer Deposition Tomoya Takahashi, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.)  CPM2023-99 |
Aluminum nitride is expected to be used as a passivation film for devices due to its wide band gap and stability to wate... [more] | CPM2023-99 pp.11-14 |
| CPM | 2024-02-29 11:00 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Hydrogen partial pressure evaluation using zinc oxide thin film transistor Kaito Otsuka, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.) CPM2023-100 |
Hydrogen is expected to be an environmentally friendly clean energy source, but since it is fllammable and explosive, th... [more] | CPM2023-100 pp.15-18 |
| SDM | 2024-01-31 13:05 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75 |
Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] | SDM2023-75 pp.5-8 |
| CPM | 2023-02-28 16:00 |
Tokyo | Tokyo University of Technology (Primary: On-site, Secondary: Online) |
Study of atomic-layer-deposition TiO2 films for strong capacitive coupling of microdevices Fumihiro Takada, Yoshinao Mizugaki, Hiroshi Shimada (UEC) CPM2022-106 |
In order to couple micro- and nano-electronic devices via capacitances strongly, dielectric materials of high relative d... [more] | CPM2022-106 pp.78-81 |
| ED | 2019-04-18 13:25 |
Miyagi | RIEC, Tohoku Univ. | Characteristic evaluation of ZnO thin film deposit by room temperature ALD Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) ED2019-2 |
(To be available after the conference date) [more] | ED2019-2 pp.5-8 |
| SDM | 2018-06-25 12:00 |
Aichi | Nagoya Univ. VBL3F | Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT) SDM2018-19 |
In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation ... [more] | SDM2018-19 pp.15-18 |
| SDM | 2017-10-26 10:50 |
Miyagi | Niche, Tohoku Univ. | Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57 |
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] | SDM2017-57 pp.39-44 |
| ED | 2017-04-20 15:25 |
Miyagi | Fabrication of SnO2 film using room temperature atomic layer deposition Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5 |
Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteri... [more] | ED2017-5 pp.17-20 |
|
| SDM | 2016-06-29 11:55 |
Tokyo | Campus Innovation Center Tokyo | Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37 |
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] | SDM2016-37 pp.27-32 |
| SDM | 2016-06-29 17:00 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Growth and characterization of atomically-thin transition metal dichalcogenides Yasumitsu Miyata (Tokyo Metropolitan Univ.) SDM2016-47 |
Recently, atomic layers of transition metal dichalcogenides (TMDCs) have attracted much attention because of their uniqu... [more] | SDM2016-47 pp.79-84 |
| ED | 2016-04-22 11:30 |
Yamagata | Room-temperature atomic layer deposition of zirconium oxide using plasma excited water vapor Kentaro Tokoro, Kensaku kanomaka, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2016-12 |
In the field of LSI production, ZrO2 is expected as a high-k material for metal-oxide-field-effect transistors. ZrO2 has... [more] | ED2016-12 pp.47-50 |
|
| SDM | 2015-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] | SDM2015-40 pp.11-16 |
| ED | 2015-04-16 14:45 |
Miyagi | Laboratory for Nanoelectronics and Spintronics | Effect of ALD Deposited HfO2 Coating on TiO2 Photo Electrodes in Dye Sensitized Solar Cells Takahiro Imai, Yuki Kato, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2015-4 |
(To be available after the conference date) [more] | ED2015-4 pp.15-18 |
| SDM, EID | 2014-12-12 17:00 |
Kyoto | Kyoto University | Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-36 SDM2014-131 |
In this paper, we reported Al2O3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power ... [more] | EID2014-36 SDM2014-131 pp.119-123 |
| ED, SDM | 2014-02-27 15:45 |
Hokkaido | Hokkaido Univ. Centennial Hall | Realizing topological insulating phase in the heterostructure composed of direct transition band gap semiconductors Kyoichi Suzuki, Koji Onomitsu, Yuichi Harada, Koji Muraki (NTT) ED2013-136 SDM2013-151 |
We have realized a topological insulating phase in a heterostructure composed of direct transition band gap semiconducto... [more] | ED2013-136 SDM2013-151 pp.25-30 |
| SDM | 2013-12-13 09:20 |
Nara | NAIST | Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-117 |
In this paper, we investigated the effect of high pressure water vapor annealing (HPWVA) as a post deposition annealing ... [more] | SDM2013-117 pp.7-11 |
| SDM | 2013-06-18 09:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] | SDM2013-45 pp.7-11 |
| SDM | 2011-07-04 12:00 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-58 |
To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer wi... [more] | SDM2011-58 pp.47-50 |
| CPM | 2010-07-30 09:55 |
Hokkaido | Michino-Eki Shari Meeting Room | Atomic layer deposition (ALD) of vanadium nitride films using TDEAV Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.) CPM2010-37 |
An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We ... [more] | CPM2010-37 pp.35-38 |
| SDM, CPM, ED | 2010-05-14 13:55 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) ED2010-31 CPM2010-21 SDM2010-31 |
GaP layers were grown on 4° misoriented Si substrates at 700－830°C using metalorganic vapor phase epitaxy. The surface a... [more] | ED2010-31 CPM2010-21 SDM2010-31 pp.75-79 |
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