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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2017-01-30
16:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Novel Functional Passive Element for Future Analogue Signal Processing -- Fabrication and Application of the VO2 Volatile Switch --
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138		 Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] SDM2016-138
pp.33-36
OME 2013-03-08
13:40		 Tokyo Kikai-Shinko-Kaikan Bldg. B1-2 Structure and Characteristics of Pentacene Field-Effect Transistors with Carrier Generation Layer
Shun Usuba, Akira Baba, Kazunari Shinbo, Keizo Kato, Futao Kaneko (Niigata Univ.), Masahiro Minagawa (NNCT) OME2012-107		 In this study, carrier generation layers which have been used in organic light-emitting diodes were adopted to organic f... [more] OME2012-107
pp.9-12
OME 2009-05-22
14:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and Characteristics of Vanadium Pentoxide/Copper Phthalocyanine Thin Film Transistor
Kazunari Shinbo, Masahiro Minagawa, Tstsuyuki Higashikawa, Shohei Kitamura, Akira Baba, Keizo Kato, Futao Kaneko (Niigata Univ.) OME2009-17		 Recently, it has been reported that vanadium pentoxide (V2O5) could be used as a charge generation layer in organic ligh... [more] OME2009-17
pp.45-48
OME 2007-11-09
12:55		 Niigata Niigata Univ. Insertion Effects of V2O5 Thin Films into CuPc Field-Effect Transistors
Toshiaki Takahashi, Shohei Kitamura, Masahiro Minagawa, Yasuo Ohdaira, Akira Baba, Kazunari Shinbo, Keizo Kato, Futao Kaneko (Niigata Univ.) OME2007-49		 A large drain current was observed in the organic field-effect transistors (OFETs). The OFETs were prepared with hole-co... [more] OME2007-49
pp.7-10
ED 2007-06-16
12:00		 Toyama Toyama Univ. Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring
Shuichi Ono, Manabu Arai (NJRC) ED2007-46		 We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characterist... [more] ED2007-46
pp.79-83
EE, CPM 2006-01-20
14:20		 Tokyo   A study on redox flow battery based on Nernst's equation : modeling and charge/discharge loss characterization
Minghua Li, Tsuyoshi Funaki, Takashi Hikihara (Kyoto Univ.), Takatoshi Kawashima (KEPCO) 		The Vanadium redox flow battery is one type of rechargeable battery, which has a quick response and outstanding overload... [more] EE2005-54 CPM2005-178
pp.43-47
 Results 1 - 6 of 6  /   
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