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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)  SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| EMT, MW, OPE, MWP, EST, IEE-EMT [detail] | 2015-07-16 11:00 |
Hokkaido | Kushiro City Lifelong Learning Center | [Invited Talk]
Recent Progress in Millimeter and Terahertz Wave Integrated Circuit Technologies for Communications and Sensing Applications Sebastian Diebold, Shunsuke Nakai (Osaka Univ.), Kazuisao Tsuruda, Toshikazu Mukai (ROHM Co.), Masayuki Fujita, Tadao Nagatsuma (Osaka Univ.) EMT2015-11 MW2015-49 OPE2015-23 EST2015-15 MWP2015-14 |
With the possibility of large absolute bandwidths, the millimeter-wave (mmW, 30 to 300 GHz) and Terahertz (THz) frequenc... [more] | EMT2015-11 MW2015-49 OPE2015-23 EST2015-15 MWP2015-14 pp.17-22 |
| SDM | 2013-11-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] | SDM2013-111 pp.65-70 |
| NLP, CAS | 2012-09-21 14:50 |
Kochi | Eikokuji Campus, University of Kochi | Studies on Couplings of SET Ring Oscillators for In-Phase Oscillation Haruka Noda, Keisuke Nagata, Hisato Fujisaka, Takeshi Kamio, Kazuhisa Haeiwa (Hiroshima City Univ.) CAS2012-46 NLP2012-72 |
Ring oscillator with single-electron tunneling (SET) transistors has a very large phase noise because electron tunneling... [more] | CAS2012-46 NLP2012-72 pp.87-91 |
| SDM, ED (Workshop) |
2012-06-27 13:15 |
Okinawa | Okinawa Seinen-kaikan | Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] | |
| SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa | Okinawa Seinen-kaikan | [Poster Presentation]
Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.) |
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more] | |
| ED, SDM | 2012-02-07 16:55 |
Hokkaido | Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166 |
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] | ED2011-149 SDM2011-166 pp.41-46 |
|
| NLP | 2011-05-26 13:50 |
Kagawa | Olive park olive memorial hall | Analyses of All-Coupled and Nearest-Neighbor-Coupled Single-Electron Ring Oscillators Masakazu Ishida, Keisuke Nagata, Hisato Fujisaka, Takeshi Kamio, Kazuhisa Haeiwa (Hiroshima City Univ.) NLP2011-3 |
Ring oscillators constructed with single-electron transistor have large phase noise because of probabilistic electron t... [more] |
NLP2011-3 pp.9-14 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| SDM [detail] | 2008-11-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182 |
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] | SDM2008-182 pp.77-82 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| SDM, ED | 2007-02-02 13:00 |
Hokkaido | Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated cir... [more] | ED2006-254 SDM2006-242 pp.79-82 |
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