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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 09:30 |
Online | Online | [Invited Talk]
Analog in-memory computing in FeFET based 1T1R array for low-power edge AI applications Daisuke Saito, Toshiyuki Kobayashi, Hiroki Koga (SONY), Yusuke Shuto, Jun Okuno, Kenta Konishi (SSS), Masanori Tsukamoto, Kazunobu Ohkuri (SONY), Taku Umebayashi (SSS), Takayuki Ezaki (SONY)  SDM2021-36 ICD2021-7 |
Deep neural network (DNN) inference for edge AI requires low-power operation, which can be achieved by implementing mass... [more] | SDM2021-36 ICD2021-7 pp.33-37 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| ED | 2015-12-21 15:00 |
Miyagi | RIEC, Tohoku Univ | Extraction of intrinsic parameters in graphene-channel FET Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95 |
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] | ED2015-95 pp.25-30 |
| SDM | 2015-06-19 10:50 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41 |
SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] | SDM2015-41 pp.17-20 |
| SDM | 2013-11-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] | SDM2013-111 pp.65-70 |
| SDM | 2012-11-16 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 |
Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device model... [more] | SDM2012-111 pp.63-68 |
| SDM, ED (Workshop) |
2012-06-27 13:15 |
Okinawa | Okinawa Seinen-kaikan | Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] | |
| SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa | Okinawa Seinen-kaikan | [Poster Presentation]
Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.) |
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more] | |
| ED, SDM | 2012-02-07 16:55 |
Hokkaido | Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166 |
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] | ED2011-149 SDM2011-166 pp.41-46 |
|
| LQE, ED, CPM | 2011-11-17 15:15 |
Kyoto | Katsura Hall，Kyoto Univ. | Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] | ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
| SDM, ED | 2009-06-25 12:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84 |
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] | ED2009-89 SDM2009-84 pp.169-172 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| SDM | 2008-12-05 13:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] | SDM2008-189 pp.27-30 |
| SDM [detail] | 2008-11-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182 |
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] | SDM2008-182 pp.77-82 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
|
| ED | 2007-06-15 16:40 |
Toyama | Toyama Univ. | Study for implementation of integrated gyrators by using resonant tunneling diodes Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.) ED2007-39 |
An integrated gyrator circuit is proposed on the basis of using resonant tunneling diodes (RTDs) and a FET. It is well k... [more] | ED2007-39 pp.45-50 |
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