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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-01-28 16:05 |
Online | Online | [Invited Talk]
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo)  SDM2020-54 |
There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness flu... [more] | SDM2020-54 pp.21-24 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
| SDM | 2014-10-17 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Analysis of Multi-Trap Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs Toshiaki Tsuchiya (Shimane Univ.) SDM2014-92 |
We propose a novel method for analyzing random telegraph noise (RTN) by using charging history effects on the traps part... [more] | SDM2014-92 pp.47-54 |
| SDM | 2012-11-15 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Neutral and Attractive Traps in Random Telegraph Signal Noise Phenomena using (100)- and (110)-Oriented CMOSFETs Jiezhi Chen, Izumi Hirano, Kosuke Tatsumura, Yuichiro Mitani (Toshiba Corp) SDM2012-103 |
(To be available after the conference date) [more] | SDM2012-103 pp.21-24 |
| MSS | 2007-08-31 15:10 |
Shimane | Shimane University | Enhancing Stability of the Fourier-Motzkin Method based on Siphon-Trap Extraction of Petri Nets Tomohiro Chikada, Satoshi Taoka, Toshimasa Watanabe (Hiroshima Univ.) CST2007-16 |
For a Petri net = (P,T,E,α,β,), a P-invariant is a |P|-deimentional vector Y with Y^t・A = 0 for the place-transition inc... [more] | CST2007-16 pp.31-36 |
| ICD | 2007-04-13 13:50 |
Oita | Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC) ICD2007-15 |
For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by ... [more] | ICD2007-15 pp.83-88 |
|
| MSS | 2004-08-05 15:15 |
Hokkaido | Hokkai Gakuen University | Improved Algorithms for Computation of Petri Net Invariants based on Siphon-Trap Atsushi Iriboshi, Satoshi Taoka, Toshimasa Watanabe (Hiroshima Univ.) |
A siphon-trap($ST$) of a Petri net $ N = (P,T,E,\alpha,\beta) $ is defined as a set $S$ of places such that, for any tr... [more] |
CST2004-19 pp.17-22 |
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