Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EST, MW, EMT, OPE, MWPTHz, IEE-EMT [detail] |
2023-07-20 11:25 |
Hokkaido |
Muroran Institute of Technology (Primary: On-site, Secondary: Online) |
Investigation of phase-change material high-frequency devices by using heat transfer simulation Taku Sato, Koji Yamashita, Hideyuki Okabe, Masayuki Kimishima (Advantest Laboratories Ltd.) EMT2023-14 MW2023-32 OPE2023-14 EST2023-14 MWPTHz2023-10 |
ON-OFF switching of phase-change material high-frequency switching devices is performed by reversibly changing the phase... [more] |
EMT2023-14 MW2023-32 OPE2023-14 EST2023-14 MWPTHz2023-10 pp.27-31 |
EE |
2023-01-20 16:05 |
Fukuoka |
Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters Daisuke Arai, Aoi Oyane, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-54 |
The behavior of SiC-MOSFETs was analyzed using semiconductor device simulation (TCAD) in a series LC resonant inverter o... [more] |
EE2022-54 pp.157-162 |
ICD, CPSY, CAS |
2017-12-14 15:10 |
Okinawa |
Art Hotel Ishigakijima |
Accelerated Transient Analysis of Power MOSFETs by the Matrix Exponential Method Tatsuya Kamei, Shigetaka Kumashiro, Kazutoshi Kobayashi (KIT) CAS2017-87 ICD2017-75 CPSY2017-84 |
In designing and developing power devices, reduction of simulation time is required. In this study, an accurate metric f... [more] |
CAS2017-87 ICD2017-75 CPSY2017-84 pp.107-112 |
EMD |
2017-11-17 10:05 |
Tokyo |
The University of Electro-Communications |
A Study of a Transient Current Switch Circuit Device of DC48V/100A for Suppressing Electrical Surge and Arc Ignition with Large Inductive Loads Hiroaki Tamura, Shigeaki Shingyochi (NIDEC COPAL ELECTRONICS), Noboru Wakatsuki (Ishinomaki Senshu Univ.) EMD2017-43 |
We fabricated the TCS circuit device that could perform current interruption suppressing electrical surge and arc igniti... [more] |
EMD2017-43 pp.1-6 |
SDM |
2017-11-10 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT) SDM2017-70 |
An accurate metric for the time step control in the power device transient simulation is proposed. This metric contains ... [more] |
SDM2017-70 pp.47-52 |
MW, ED |
2015-01-16 11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193 |
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] |
ED2014-129 MW2014-193 pp.71-76 |
ED, MW |
2010-01-14 14:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169 |
Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] |
ED2009-186 MW2009-169 pp.65-70 |
SANE |
2007-12-21 13:55 |
Saitama |
Nippon Institute of Technology |
A Radar RF Source with a DDS device Akito Miyoshi (Fujitsu System Integration Laboratories), Tomohiro Haruta, Hirokazu Kobayashi (Fujitsu) SANE2007-97 |
Advances of digital integrated circuits in recent years are remarkable, and then systems that have ever been distant ide... [more] |
SANE2007-97 pp.13-18 |
EE |
2004-09-10 15:35 |
Tokyo |
kikai-Shinko-Kaikan Bldg. |
A Current Compensation Circuit for Large Load Transient of VRM Koichi Ito, Yoichi Ishizuka, Hirofumi Matsuo (Nagasaki Univ.) |
A new current-compensation circuit system for VRM is proposed. The proposed circuit consists of MOSFETs, resistors and c... [more] |
EE2004-33 pp.23-28 |