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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech)  ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] | 2024-01-25 13:05 |
Kyoto | (Primary: On-site, Secondary: Online) |
Physical properties of hydrogen-bonded liquid crystal with fluorine-subsutituted benzoic acids Koki Sawataishi, Dan Jian, Rumiko Yamaguchi (Akita Univ.) EID2023-2 |
Fluoro-benzoic acids (2-, 3-, 4-FBA), difluoro-benzoic acids (2,3-, 2,4-, 2,5-, 2,6-, 3,4-, 3,5-F2BA) and trifluoro-benz... [more] | EID2023-2 pp.1-4 |
| SDM | 2023-10-13 16:40 |
Miyagi | Niche, Tohoku Univ. | Formation process of GaN MOS interface suppressing interfacial oxidation Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) SDM2023-60 |
In this paper, we report the effects of MOS interfacial oxidation on electrical properties of GaN MOSFET and show improv... [more] | SDM2023-60 pp.40-45 |
| NLP, CAS | 2023-10-06 15:10 |
Gifu | Work plaza Gifu | A PWM/digital Converter for Improved Conversion Resolution using Frequency Multiplicator Zhang He, Andrino Robles Roberto, Tomochika Harada (Yamagata Univ.) CAS2023-43 NLP2023-42 |
For IoT (Internet of Things) devices, a reduction in power consumption is desired. To reduce power consumption, researc... [more] | CAS2023-43 NLP2023-42 pp.58-61 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 16:35 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21 |
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] | SDM2023-42 ICD2023-21 pp.32-35 |
| EE | 2023-01-20 11:25 |
Fukuoka | Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
Online junction temperature measurement of Power MOSFET by dynamic VGS-ID monitoring system Yandagkhuu Bayarsaikhan, Ichiro Omura (KIT) EE2022-46 |
As the demand for high reliability in power electronics systems increases, the online condition monitoring of power devi... [more] | EE2022-46 pp.111-116 |
| SDM | 2022-10-19 16:30 |
Online | Online | [Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62 |
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] | SDM2022-62 pp.34-37 |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 14:15 |
Online | Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6 |
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] | SDM2022-38 ICD2022-6 pp.17-20 |
|
| ED | 2022-04-21 11:00 |
Online | Online | TIQ Based Flash ADC with Threshold Compensation Yuhei Hashimoto, Cong-Kha Pham (UEC) ED2022-5 |
It is known that Analog-to-digital converter using TIQ comparators are vulnerable to process and temperature variations,... [more] | ED2022-5 pp.15-18 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 11:00 |
Online | Online | CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8 |
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] | SDM2020-8 ICD2020-8 pp.37-40 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-13 15:25 |
Ehime | Ehime Prefecture Gender Equality Center | Design of Reference-free CMOS Temperature Sensor with Statistical MOSFET Selection Shogo Harada, Mahfuzul Islam, Takashi Hisakado, Osami Wada (Kyoto Univ.) VLD2019-34 DC2019-58 |
The need for low power temperature sensors that can operate under limited power supply has been increasing. One of the... [more] |
VLD2019-34 DC2019-58 pp.51-56 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 09:40 |
Ehime | Ehime Prefecture Gender Equality Center | Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2019-36 DC2019-60 |
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] | VLD2019-36 DC2019-60 pp.63-68 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 10:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] | SDM2019-46 ICD2019-11 pp.63-66 |
| SDM | 2019-01-29 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82 |
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] | SDM2018-82 pp.5-8 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 09:00 |
Hiroshima | Satellite Campus Hiroshima | Design and fabrication of characteristics measurement circuit for CMOS-compatible ultra-low-power non-volatile memory element using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2018-65 DC2018-51 |
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] | VLD2018-65 DC2018-51 pp.183-188 |
| SDM | 2018-11-09 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76 |
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] | SDM2018-76 pp.59-64 |
| SDM | 2018-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62 |
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] | SDM2018-62 pp.51-56 |
| SDM, ICD, ITE-IST [detail] | 2018-08-07 14:25 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 | Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18 |
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] | SDM2018-31 ICD2018-18 pp.31-34 |
| SDM, ICD, ITE-IST [detail] | 2018-08-07 15:00 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 | A 0.6V 9bit PWM Differential Arithmetic Circuit Fumiya Kojima, Tomochika Harada (Yamagata Univ) SDM2018-32 ICD2018-19 |
In this paper, we design and evaluate the analog / PWM conversion circuit and the PWM differential arithmetic circuit wh... [more] | SDM2018-32 ICD2018-19 pp.35-40 |
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