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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2023-04-22 09:40 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.)  SDM2023-7 OME2023-7 |
High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is att... [more] | SDM2023-7 OME2023-7 pp.27-29 |
| SDM, OME | 2021-04-23 15:10 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) SDM2021-4 OME2021-4 |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | SDM2021-4 OME2021-4 pp.15-18 |
| SDM, OME | 2021-04-23 16:50 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Improving the characteristics of graphene TFT using graphene/Ni compound semiconductor hetero-junction Kazunori Ichikawa (NITM) SDM2021-7 OME2021-7 |
We investigated to form graphene directly on an oxidized Ni layer and measurement of thin film transistor (TFT) with gra... [more] | SDM2021-7 OME2021-7 pp.26-29 |
| SDM, OME | 2020-04-13 15:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | |
| SDM, OME | 2020-04-13 16:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Improving the characteristics of graphene TFT using graphene/Ni compound semiconductor hetero-junction Kazunori Ichikawa (NIT Matsue Col) |
We attempted to form graphene directly on an oxidized Ni layer and measurement of thin film transistor (TFT) with graphe... [more] | |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-24 11:10 |
Tottori | Tottori Univ. | [Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) EID2019-16 |
(To be available after the conference date) [more] | EID2019-16 pp.129-131 |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 11:00 |
Kyoto | Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77 |
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] | EID2018-4 SDM2018-77 pp.1-4 |
|
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| SDM, EID | 2017-12-22 15:45 |
Kyoto | Kyoto University | Operation verification of Thin-Film Biostimulating Device using Thin-Film Transistors Kohei Miyake, Keisuke Tomioka, Keigo Misawa, Mutsumi kimura (Ryukoku Univ.) EID2017-25 SDM2017-86 |
Application to the medical field is expected from the characteristics of thin-film transistors (TFTs). We studied whethe... [more] | EID2017-25 SDM2017-86 pp.71-76 |
| SDM | 2016-06-29 16:40 |
Tokyo | Campus Innovation Center Tokyo | MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46 |
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] | SDM2016-46 pp.75-78 |
| SDM, OME | 2016-04-08 16:25 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9 |
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] | SDM2016-9 OME2016-9 pp.35-38 |
| SDM, OME | 2016-04-09 10:50 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] | SDM2016-14 OME2016-14 pp.57-60 |
| OME | 2016-03-03 14:20 |
Tokyo | S322 lecture room, Tokyo Tech, O-okayama campus | [Invited Talk]
Novel Design and Organic Device Applications of n-Type Semiconducting Polymers Tsuyoshi Michinobu (Tokyo Tech) OME2015-88 |
Novel n-type semiconducting polymers were developed and applied to various electronic devices. First, fullerene (C60) po... [more] | OME2015-88 pp.11-14 |
| EID, SDM | 2015-12-14 14:00 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of GaxSn1-xO thin film by the mist CVD method Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-16 SDM2015-99 |
Thin films of GaxSn1-xO (GTO) for an active layer of thin film transistor (TFT) were deposited with different substrate ... [more] | EID2015-16 SDM2015-99 pp.31-34 |
| EID, SDM | 2015-12-14 15:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103 |
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] | EID2015-20 SDM2015-103 pp.49-52 |
| EID, SDM | 2015-12-14 15:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT -- Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai) EID2015-22 SDM2015-105 |
We are executing the research and development of artificial retina using a thin film transistor. In this presentation, w... [more] | EID2015-22 SDM2015-105 pp.57-60 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 10:35 |
Aomori | Aomori-Bussankan-Asupamu | Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa (NAIST), Kazumoto Miwa (CRIEPI), Yukiharu Uraoka (NAIST), Shimpei Ono (CRIEPI) R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 |
Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field... [more] | R2015-23 EMD2015-31 CPM2015-47 OPE2015-62 LQE2015-31 pp.5-8 |
| CPM, OPE, LQE, R, EMD | 2015-08-27 11:00 |
Aomori | Aomori-Bussankan-Asupamu | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 |
Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] | R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32 pp.9-11 |
| OME, SDM | 2015-04-29 17:05 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] | SDM2015-8 OME2015-8 pp.31-34 |
| OME, SDM | 2015-04-30 13:00 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi (Hiroshima Univ.) SDM2015-13 OME2015-13 |
The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral cr... [more] | SDM2015-13 OME2015-13 pp.49-52 |
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