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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| RCS, SIP, IT | 2022-01-20 15:10 |
Online | Online | [Invited Talk]
Wireless link quality prediction using physical space information in Society 5.0 Riichi Kudo, Kahoko Takahashi, Hisashi Nagata, Tomoki Murakami, Tomoaki Ogawa (NTT)  IT2021-44 SIP2021-52 RCS2021-212 |
Thanks to the great advances in wireless communication systems, many types of the wireless terminals are available. It i... [more] | IT2021-44 SIP2021-52 RCS2021-212 pp.93-94 |
| HIP, VRSJ | 2021-02-18 16:40 |
Online | Online | Quantitative Measurement of "zoku-zoku" sensation by approaching visual stimulus Ryo Teraoka, Naoki Kuroda, Wataru Teramoto (Kumamoto Univ.) HIP2020-81 |
When someone is being located nearby we can sometimes sense the situation with a "zoku-zoku'' (frisson) sensation even i... [more] | HIP2020-81 pp.44-47 |
| HWS, VLD | 2019-02-28 10:50 |
Okinawa | Okinawa Ken Seinen Kaikan | Single Supply Level Shifter Circuit using body-bias Yuki Takeyoshi, Kimiyoshi Usame (SIT) VLD2018-109 HWS2018-72 |
A multi-VDD scheme exists as a technique to realize low power consumption by using different power supply voltages. A ci... [more] | VLD2018-109 HWS2018-72 pp.97-102 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 13:10 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Feasibility studies and evaluation for Level-Shifter less design in Silicon-on-Thin-BOX (SOTB) Shunsuke Kogure, Kimiyoshi Usami (Shibaura Institute of Tech) VLD2016-47 DC2016-41 |
Level shifter is a circuit that changes the voltage amplitude of the signal. It is essential to exchange signals with di... [more] | VLD2016-47 DC2016-41 pp.19-24 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-29 09:00 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Design and Implementation Methodology of Low-power Standard cell memory with optimized body-bias separation in Silicon-on-Thin-BOX (SOTB) Yusuke Yoshida, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2016-53 DC2016-47 |
We focus on the Standard Cell Memory (SCM) as another option to supersede SRAM for low-voltage operation. This paper des... [more] | VLD2016-53 DC2016-47 pp.55-60 |
| SDM | 2016-10-26 16:10 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] | SDM2016-72 pp.21-25 |
| VLD | 2016-03-01 16:40 |
Okinawa | Okinawa Seinen Kaikan | Optimization technique of substrate voltage for Dynamic Multi-Vth methodology in Silicon-on-thin BOX. Hanano Suzuki, Kimiyoshi Usami (Shibaura IT) VLD2015-129 |
Silicon-on-Thin-BOX is one of the FD-SOI devices. It operates at ultra-low voltage and it is possible to effectively cha... [more] | VLD2015-129 pp.105-110 |
| VLD | 2016-03-01 17:05 |
Okinawa | Okinawa Seinen Kaikan | Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control Yusuke Yoshida, Masaru Kudo, Kimiyoshi Usami (SIT) VLD2015-130 |
In recent years, energy harvesting and sensor node have attracted a lot of attention. Therefore, a memory which can redu... [more] | VLD2015-130 pp.111-116 |
| VLD, CPSY, RECONF, IPSJ-SLDM, IPSJ-ARC [detail] | 2016-01-20 09:25 |
Kanagawa | Hiyoshi Campus, Keio University | Implementation and evaluation of Dynamic Multi-Vth methodology in Silicon-on-Thin-BOX Shohei Io, Hanano Suzuki, Shohei Nakamura, Kimiyoshi Usami (Shibaura IT) VLD2015-88 CPSY2015-120 RECONF2015-70 |
Silicon-on-Thin-BOX is one of the FD-SOI devices. It operates at ultra-low voltage and it is possible to effectively cha... [more] | VLD2015-88 CPSY2015-120 RECONF2015-70 pp.91-96 |
| OME | 2015-10-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Formation of Diamond Nanoparticle Thin Films by Electrophoretic Deposition Yosuke Goto (Tokyo Univ. Agricul. & Technol.), Fujio Ohishi (Kanagawa Univ.), Kuniaki Tanaka, Hiroaki Usui (Tokyo Univ. Agricul. & Technol.) OME2015-47 |
Thin films of diamond nanoparticles were prepared by electrophoretic deposition (EPD). The film growth rate increased wi... [more] | OME2015-47 pp.23-28 |
| SDM, ICD | 2015-08-25 10:55 |
Kumamoto | Kumamoto City | [Invited Talk]
Novel Single p+Poly-Si/Hf/SiON Gate Stack Technology on Silicon-on-Thin-Buried-Oxide (SOTB) for Ultra-Low Leakage Applications Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Masaharu Kobayashi, Toshiro Hiramoto (UT) SDM2015-67 ICD2015-36 |
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf... [more] | SDM2015-67 ICD2015-36 pp.53-57 |
| RECONF | 2015-06-19 11:35 |
Kyoto | Kyoto University | Evaluation of the third Flex Power FPGA chip in SOTB technology Masakazu Hioki, Yasuhiro Ogasahara, Hanpei Koike (AIST) RECONF2015-3 |
This paper reports the evaluation of the third Flex Power FPGA chip in SOTB technology. Fabricated chip aims to shrink a... [more] | RECONF2015-3 pp.13-16 |
| VLD | 2015-03-04 11:10 |
Okinawa | Okinawa Seinen Kaikan | Energy minimization by voltage choice targeted for logic synthesis in silicon on thin buried oxide Jun Kawasaki, Kimiyoshi Usami (S.I.T.) VLD2014-179 |
Silicon on Thin Buried Oxide (SOTB) technology enables us to reduce supply voltage because the Vth variation can be supp... [more] | VLD2014-179 pp.147-152 |
| RECONF, CPSY, VLD, IPSJ-SLDM [detail] | 2015-01-29 17:00 |
Kanagawa | Hiyoshi Campus, Keio University | Temperature sensor applying Body Bias in Silicon-on-Thin-BOX Tsubasa Kosaka, Shohei Nakamura, Kimiyoshi Usami (S.I.T.) VLD2014-127 CPSY2014-136 RECONF2014-60 |
The performance advancement by the transistor scaling is blocked by increase of power consumption and process variation.... [more] | VLD2014-127 CPSY2014-136 RECONF2014-60 pp.99-104 |
| ICD, CPSY | 2014-12-02 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Measurements and Evaluations of Aging Degradation Caused by Plasma Induced Damage in 65 nm Process Ryo Kishida, Azusa Oshima, Kazutoshi Kobayashi (Kyoto Inst. Tech.) ICD2014-106 CPSY2014-118 |
Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a... [more] | ICD2014-106 CPSY2014-118 pp.123-128 |
| ICD | 2014-04-18 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Tomoko Mizutani, Toshiro Hiramoto (UTokyo) ICD2014-11 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] | ICD2014-11 pp.53-57 |
| VLD | 2014-03-05 13:50 |
Okinawa | Okinawa Seinen Kaikan | Design methodology on Dynamic Multi-Vth control technique for Silicon on Thin Buried Oxide(SOTB) Tatsuki Saigusa, Kimiyoshi Usami (Shibaura Inst. of Tech) VLD2013-162 |
Silicon on thin BOX(SOTB) is one of FD-SOI device.It is possible to operate with ultra-low voltage of 0.4V and greatly c... [more] | VLD2013-162 pp.153-158 |
| VLD, IPSJ-SLDM | 2013-05-16 14:10 |
Fukuoka | Kitakyushu International Conference Center | Level Converter Design for Ultra Low Voltage Operation in Silicon-on-Thin-BOX MOSFET Shohei Nakamura, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2013-5 |
Silicon on Thin Buried Oxide (SOTB) technology has an advantage that variation in threshold voltage can be more suppress... [more] | VLD2013-5 pp.43-48 |
| SDM, ED | 2013-02-27 14:10 |
Hokkaido | Hokkaido Univ. | Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS) ED2012-129 SDM2012-158 |
The enhancement of Seebeck coefficient by controlling the Si Fermi energy is one of key issues for enhancing the thermoe... [more] | ED2012-129 SDM2012-158 pp.7-11 |
| CPSY, VLD, RECONF, IPSJ-SLDM [detail] | 2013-01-16 17:00 |
Kanagawa | Dynamic Multi-Vth Control Using Body Biasing in Silicon on Thin Buried Oxide (SOTB) Shinya Ajiro, Masaru Kudo, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2012-120 CPSY2012-69 RECONF2012-74 |
Silicon on thin BOX(SOTB) is an FD-SOI device being possible to operate with ultra-low voltage of 0.4V and greatly chang... [more] | VLD2012-120 CPSY2012-69 RECONF2012-74 pp.75-80 |
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