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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2019-08-09 10:15 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] |
SDM2019-46 ICD2019-11 pp.63-66 |
SDM |
2016-11-10 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era Yasuhisa Omura (Kansai Univ.) SDM2016-81 |
This paper discusses, in detail, the potential and prospects of various SOI devices including SOI TFETs. Device perform... [more] |
SDM2016-81 pp.15-22 |
SDM |
2015-01-27 16:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146 |
Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] |
SDM2014-146 pp.45-48 |
SDM, ICD |
2013-08-01 09:25 |
Ishikawa |
Kanazawa University |
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 |
A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The... [more] |
SDM2013-66 ICD2013-48 pp.7-12 |
SDM, ED (Workshop) |
2012-06-27 13:15 |
Okinawa |
Okinawa Seinen-kaikan |
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] |
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SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa |
Okinawa Seinen-kaikan |
Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] |
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SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa |
Okinawa Seinen-kaikan |
[Poster Presentation]
Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances. Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, In Man Kang (Kyunpook Nat'l Univ.) |
A gate-all-around tunneling field-effect transistor (GAA TFET) with high-k gate-dielectric and n-pocket layer is demonst... [more] |
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SDM, ICD |
2011-08-26 10:25 |
Toyama |
Toyama kenminkaikan |
[Invited Talk]
Status and Prospect of Ultra Low Power Logic Devices Jiro Ida (KIT) SDM2011-86 ICD2011-54 |
Ultra Low Power Application of Sensor network, or, implanted medical devices where battery less, ultimately, is needed, ... [more] |
SDM2011-86 ICD2011-54 pp.79-83 |
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