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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EE | 2023-01-20 16:05 |
Fukuoka | Kyushu Institute of Technology (Primary: On-site, Secondary: Online) |
Behavior of power MOSFETs driving 13.56MHz series LC resonant inverters Daisuke Arai, Aoi Oyane, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.)  EE2022-54 |
The behavior of SiC-MOSFETs was analyzed using semiconductor device simulation (TCAD) in a series LC resonant inverter o... [more] | EE2022-54 pp.157-162 |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SDM | 2019-11-08 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] | SDM2019-77 pp.45-48 |
| SDM | 2019-11-08 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Investigation of TCAD Calibration Methods for Saturation and Tail Current of 6.5kV IGBTs Takeshi Suwa, Shigeaki Hayase (TDSC) SDM2019-78 |
In this work we focus on two calibration methods to clarify a key point of TCAD calibration for turn-off waveforms and I... [more] | SDM2019-78 pp.49-54 |
| SDM, ICD, ITE-IST [detail] | 2019-08-07 14:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2 |
Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel materials which ... [more] |
SDM2019-37 ICD2019-2 pp.7-10 |
| SDM | 2019-01-29 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] | SDM2018-81 pp.1-4 |
| SDM | 2018-11-09 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] | SDM2018-74 pp.47-52 |
| SDM, ICD, ITE-IST [detail] | 2018-08-07 11:30 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 | Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) SDM2018-28 ICD2018-15 |
(To be available after the conference date) [more] | SDM2018-28 ICD2018-15 pp.15-20 |
| VLD, HWS (Joint) |
2018-02-28 17:20 |
Okinawa | Okinawa Seinen Kaikan | Evaluation of a Radiation-Hardened Method and Soft Error Resilience on Stacked Transistors in 28/65 nm FDSOI Processes Haruki Maruoka, Kodai Yamada, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2017-103 |
The continuous downscaling of transistors has resulted in an increase of reliability issues for semiconductor chips. In ... [more] | VLD2017-103 pp.85-90 |
| SDM | 2017-02-06 13:35 |
Tokyo | Tokyo Univ. | [Invited Talk]
Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143 |
We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] | SDM2016-143 pp.23-28 |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 14:15 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations Kodai Yamada, Haruki Maruoka, Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-49 DC2016-43 |
According to the Moore's law, LSIs are miniaturized and the reliability of LSIs is degraded. To improve the tolerance ... [more] |
VLD2016-49 DC2016-43 pp.31-36 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 14:40 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi (KIT) VLD2016-50 DC2016-44 |
The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft erro... [more] | VLD2016-50 DC2016-44 pp.37-41 |
| MW, ED | 2015-01-16 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193 |
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] | ED2014-129 MW2014-193 pp.71-76 |
| SDM | 2014-11-06 10:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) SDM2014-96 |
In this paper, a two-dimensional analytical potential model for the asymmetric double-gate tunnel field transistor (ADG-... [more] | SDM2014-96 pp.1-6 |
| SDM | 2014-11-06 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional calculation of ion implantation to SiC substrate Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) SDM2014-98 |
[more] | SDM2014-98 pp.13-18 |
| SDM | 2014-11-06 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device simulation
-- More than 30 years in Toshiba's TCAD -- Naoyuki Shigyo (Toshiba) SDM2014-100 |
TCAD is one of important tools for designing a semiconductor device. As a virtual fabrication, TCAD contributes to reduc... [more] | SDM2014-100 pp.25-30 |
| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| SDM | 2011-11-10 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation Yusuke Higashi, Nobuyuki Momo, Hisayo S. Momose, Tatsuya Ohguro, Kazuya Matsuzawa (Toshiba) SDM2011-118 |
Physical modeling of transient and frequency domain noise simulation for random telegraph noise (RTN) is conducted, cons... [more] | SDM2011-118 pp.17-20 |
| SDM | 2011-11-11 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Usages of TCAD simulation on development of semiconductor for vehicles and future ploblems Hisashi Ishimabushi, Takashi Ueta, Masaru Nagao, Kimimori Hamada (TMC) SDM2011-124 |
Recently, a good performance to think about the global environment is necessary for the vehicle. The hybrid vehicle has... [more] |
SDM2011-124 pp.51-55 |
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