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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MRIS, CPM, ITE-MMS, OME [detail] 2023-10-26
14:30		 Niigata Niigata Univ. Ekiminami Campus
(Primary: On-site, Secondary: Online)		 Improvement of non-fullerene organic solar cells by using the localized surface plasmon resonance effect of metal nanoparticles
Yuting Miao, Sachiko Jonai, Kazunari Shinbo, Keizo Kato, Akira Baba (Niigata Univ.) MRIS2023-10 CPM2023-44 OME2023-31		 Organic Solar Cells (OSCs) based on the bulk heterojunction (BHJ) structure have many potential advantages such as flexi... [more] MRIS2023-10 CPM2023-44 OME2023-31
pp.10-13
CPM, LQE, ED 2019-11-22
13:05		 Shizuoka Shizuoka Univ. (Hamamatsu) Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes
Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) ED2019-54 CPM2019-73 LQE2019-97		 Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates wi... [more] ED2019-54 CPM2019-73 LQE2019-97
pp.89-92
SDM, ED, CPM 2017-05-26
09:55		 Aichi VBL, Nagoya University Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18		 Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] ED2017-24 CPM2017-10 SDM2017-18
pp.51-54
ED, CPM, SDM 2015-05-29
09:55		 Aichi Venture Business Laboratory, Toyohashi University of Technology Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32		 The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] ED2015-30 CPM2015-15 SDM2015-32
pp.71-76
CPM, SDM, ED 2011-05-19
10:25		 Aichi Nagoya Univ. (VBL) Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17		 To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] ED2011-4 CPM2011-11 SDM2011-17
pp.15-20
ED, MW 2008-01-17
11:10		 Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148		 Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
pp.61-66
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