Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-11-11 11:30 |
Online |
Online |
Modeling of Super Steep Subthreshold Slope "PN Body Tied SOI-FET" by using Neural Network Nakata Kengo, Mori Takayuki, Ida Jiro (Kanazawa Inst. of Tech.) SDM2022-73 |
In this study, we examined how PN-Body Tied (PNBT) Silicon On Insulator (SOI)-FETs, a novel device structure with steep ... [more] |
SDM2022-73 pp.44-48 |
ICD, SDM, ITE-IST [detail] |
2022-08-08 14:15 |
Online |
|
Evaluation of Steep Subthreshold Slope Device "Dual-gate type PN-body Tied SOI-FET" for Ultra-low Voltage Operation Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2022-38 ICD2022-6 |
In this study, we report the first prototype results of a Steep SS "Dual-Gate (DG) PN-Body Tied (PNBT) SOI-FET" for extr... [more] |
SDM2022-38 ICD2022-6 pp.17-20 |
ICD, SDM, ITE-IST [detail] |
2020-08-07 11:00 |
Online |
Online |
CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) SDM2020-8 ICD2020-8 |
In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our l... [more] |
SDM2020-8 ICD2020-8 pp.37-40 |
MW (2nd) |
2020-05-13 - 2020-05-15 |
Overseas |
CU, Bangkok, Thailand (Postponed) |
RF Measurement of Steep Subthreshold Slope "PN-Body Tied SOI FET" Mitsuhiro Yuizono, Jiro Ida, Takayuki Mori (Kanazawa Inst of Tech) |
RF measured data of super steep subthreshold slope "PN-Body Tied (PNBT) SOI-FET" was obtained for the first time. The te... [more] |
|
SDM, ICD, ITE-IST [detail] |
2019-08-09 14:10 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET” Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16 |
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] |
SDM2019-51 ICD2019-16 pp.89-93 |
SDM |
2019-01-29 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 |
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] |
SDM2018-84 pp.13-16 |
MW (2nd) |
2018-06-27 - 2018-06-29 |
Overseas |
KMITL, Bangkok, Thailand |
Rectification of Small Voltage Signal by Super Steep Subthreshold Slope "PN-Body Tied SOI FET" for RF Energy Harvesting Takuya Yamada, Jiro Ida, Takayuki Mori, Shun Momose, Yasunori Tsuchiya, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) |
Rectification of the small voltage signal was experimentally confirmed, for the first time, by our new device of the sup... [more] |
|
MW (2nd) |
2017-06-14 - 2017-06-16 |
Overseas |
KMUTT, Bangkok, Thailand |
Possibility of Super Steep Subthreshold Slope Devices for High Efficiency RF Energy Harvesting of Ultra Low Power Input Jiro Ida, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) |
The new diode technologies for RF energy harvesting of the ultralow power input was discussed. The limit of the conventi... [more] |
|
ICD, SDM, ITE-IST [detail] |
2016-08-03 15:30 |
Osaka |
Central Electric Club |
Performance Enhancement of Tunnel FET by Negative Capacitance Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-68 ICD2016-36 |
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] |
SDM2016-68 ICD2016-36 pp.127-130 |
SDM |
2016-06-29 10:40 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] |
SDM2016-34 pp.9-13 |
SDM |
2016-01-28 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage Jiro Ida (Kanazawa Institute of Technology) SDM2015-127 |
We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is in... [more] |
SDM2015-127 pp.31-34 |
SDM |
2015-01-27 16:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146 |
Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] |
SDM2014-146 pp.45-48 |
SDM, ICD |
2013-08-01 09:00 |
Ishikawa |
Kanazawa University |
Analysis of Steep Subthreshold Slope Characteristics in SOI MOSFET Takayuki Mori, Jiro Ida (Kanazawa Inst. of Tech.) SDM2013-65 ICD2013-47 |
We have found out that the steep Subthreshold Slope (SS) appears in the Floating-Body (FB) and the Body-Tied (BT) SOI MO... [more] |
SDM2013-65 ICD2013-47 pp.1-6 |