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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 45  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2019-08-26
14:20
Hokkaido Kitami Institute of Technology Preparation of conductive oxide sintered targets for AZO thin films deposited by sputtering method
Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Koutaro Nagata (Niigata Univ.) CPM2019-39
In this study, AZO conductive oxide sintered bodies with 2wt.% Al2O3 added to ZnO were prepared at sintering temperature... [more] CPM2019-39
pp.9-12
SCE 2019-08-09
13:05
Ibaraki National Institute of Advanced Industrial Science and Technology Preparation and evaluation of Nb3Ge superconducting thin films
Akira Kawakami, Hirotaka Terai (NICT), Yoshinori Uzawa (NAOJ) SCE2019-13
The Nb3Ge thin film with the A15 crystal structure exhibits a superconducting transition temperature of up to 23 K, and ... [more] SCE2019-13
pp.27-30
US 2018-11-02
15:20
Aichi   Deposition of c-axis parallel oriented ZnO film on entire surface of silica glass pipe
Yuta Takamura (Doshisha Univ.), Shinji Takayanagi (Nagoya Inst. Tech.), Mami Matsukawa (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.) US2018-68
SH type SAW sensor can measure the viscosity, conductivity and permittivity of a liquid because it propagate to liquid /... [more] US2018-68
pp.25-30
CPM, IEE-MAG 2018-11-01
14:50
Niigata Machinaka campus Nagaoka Consideration of bilayer film with Zn and AZO deposited by sputtering method
Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Koutaro Nagata, Nozomu Tsuboi (Niigata Univ.) CPM2018-45
In order to preparation of Zn doped AZO film, deposition of AZO films on Zn films were attempted by dc magnetron sputter... [more] CPM2018-45
pp.21-24
SDM 2018-10-18
10:20
Miyagi Niche, Tohoku Univ. Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering
Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] SDM2018-58
pp.31-34
CPM 2017-07-22
11:33
Hokkaido   [Invited Talk] Development of Low Damage Facing Target Sputter-deposition Processes
Yoichi Hoshi (Tokyo Polytechnic Univ.) CPM2017-38
About 43 years ago, I firstly challenged the deposition of YIG films by using a conventional sputtering system. Depositi... [more] CPM2017-38
pp.89-94
SDM 2015-10-30
14:30
Miyagi Niche, Tohoku Univ. Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering
Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] SDM2015-81
pp.53-56
US 2015-09-03
15:50
Hokkaido   Electromechanical coupling coefficients of c-axis parallel oriented ScAlN films grown by ion-beam assisted RF magnetron sputtering
Mineki Oka, Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.), Mami Matsukawa (Doshisha Univ.) US2015-51
Recently, Akiyama et al. found that doping scandium into AlN film increases the number of piezoelectric coefficient d33 ... [more] US2015-51
pp.31-35
CPM 2015-08-11
09:40
Aomori   Low temperature deposition of HfNx film by radical reaction
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40
We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] CPM2015-40
pp.47-50
SDM, EID 2014-12-12
14:45
Kyoto Kyoto University Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] EID2014-28 SDM2014-123
pp.79-82
MRIS, ITE-MMS 2014-12-12
09:50
Ehime Ehime Univ. Stacking structure dependence of magnetic properties of Co/Pt layer stacked film sputter - deposited at room temperature
Taruho Tsuchiya, Naoki Honda, Hironaga Uchida (Tohoku Inst Tech), Shin Saito, Shintaro Hinata (Tohoku Univ) MR2014-38
Preparation of L11 ordered Co-Pt film with atomic layer stacking was investigated using room temperature sputtering aimi... [more] MR2014-38
pp.59-64
SDM 2014-10-16
16:00
Miyagi Niche, Tohoku Univ. Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] SDM2014-87
pp.19-22
MRIS, ITE-MMS 2013-12-12
16:15
Ehime Ehime Univ. Deposition of Co/Pt film with perpendicular magnetic anisotropy by layer stacking sputtering
Taruho Tsuchiya, Naoki Honda (Tohoku Inst. of Tech.) MR2013-30
Low temperature preparation of Co/Pt stacked film with high magnetic anisotropy was studied using atomic layer stacking ... [more] MR2013-30
pp.33-38
CPM 2013-10-25
11:50
Niigata Niigata Univ. Satellite Campus TOKIMEITO Preparation of carbon thin films by gas flow sputtering in high-density plasma
Takuma Ishii, Yuji Satou, Takaharu Watanabe, Kiyoshi Ishii, Hiroshi Sakuma (Utsunomiya Univ.) CPM2013-107
High-quality diamond thin films are successfully obtained by plasma-assisted CVD. On the other hand, carbon films with a... [more] CPM2013-107
pp.67-71
EST, MWP, OPE, MW, EMT, IEE-EMT [detail] 2013-07-18
11:25
Hokkaido Wakkanai Synthesis Cultural Center Trial Fabrication of 180 GHz-Band PTFE-Filled Waveguide by SR Etching and Its Evaluation
Mitsuyoshi Kishihara (Okayama Pref. Univ.), Hideki Kido, Akinobu Yamaguchi, Yuichi Utsumi, Isao Ohta (Univ. of Hyogo) MW2013-64 OPE2013-33 EST2013-28 MWP2013-23
This paper describes trial fabrication of a PTFE-filled waveguide for 180 GHz-band operation with the use of the SR (syn... [more] MW2013-64 OPE2013-33 EST2013-28 MWP2013-23
pp.103-108
ED 2012-11-19
15:55
Osaka Osaka Univ. Nakanoshima Center Spindt-emitter fabrication using sputtering deposition
Tomoya Yoshida, Masayoshi Nagao, Nobuko Koda, Takashi Nishi (AIST), Takeo Nakano (Seikei Univ.) ED2012-58
A novel fabrication method of Spindt-type field emitter array will be presented. In our method, a double-layered photore... [more] ED2012-58
pp.19-23
CPM 2012-10-27
09:10
Niigata   CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method
Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.) CPM2012-104
CuAlO2 film deposition was tried by reactive sputtering using Cu/Al targets
prepared by cold spray method.The Cu/Al ta... [more]
CPM2012-104
pp.61-64
SDM, ED
(Workshop)
2012-06-27
17:30
Okinawa Okinawa Seinen-kaikan Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays
Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus)
As a result of Blue-Multi-Laser-Diode Annealing (BLDA) for phosphorus-doped Si films deposited by R.F. sputtering using ... [more]
SDM, ED
(Workshop)
2012-06-28
10:40
Okinawa Okinawa Seinen-kaikan [Poster Presentation] The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture
Jonghun Kim, Gyohun Koo, Changju Lee, Sungho Hahm (Kyungpook National Univ.), Youngchul Jung (Gyeongju Univ.), Yougsoo Lee (Kyungpook National Univ.)
The crystalline structures of reactively sputtered nickel oxide films grown on SiO2/Si were systematically analyzed by a... [more]
ED, SDM, CPM 2012-05-18
14:50
Aichi VBL, Toyohashi Univ. of Technol. Preparation and evaluation of LiMn2O4 films prepared by sputtering method
Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) ED2012-37 CPM2012-21 SDM2012-39
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. In this research, w... [more] ED2012-37 CPM2012-21 SDM2012-39
pp.99-104
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