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Committee Date Time Place Paper Title / Authors Abstract Paper #
IE, ITS, ITE-MMS, ITE-ME, ITE-AIT [detail] 2021-02-19
Online Online [Special Talk] Low-power consumption optical transmission of electron-spin information using semiconductor quantum dots
Shino Sato, Satoshi Hiura, Junichi Takayama, Akihiro Murayama (IST, Hokkaido Univ.)
Semiconductor quantum dots (QDs) are microscopic nanostructures with a diameter of several tens of nanometers, and the e... [more]
(Cancelled but technical report was issued)
A Mathematical Model for a Synapse Device Based on Spintronics
Taku Sato, Kikuchi Yushi, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (Tohoku Univ.) NLP2019-122
Recently, there is an increasing interest in a Spiking Neural Network (SNN) and Spike-Timing Dependent Plasticity (STDP)... [more] NLP2019-122
Okinawa Miyakojima Marine Terminal Mathematical modeling of spintronics neuron device based on thermal dynamics
Yushi Kikuchi, Taku Sato, Aleksandr Kurenkov, Yoshihiko Horio, Shunsuke Fukami (TU) NLP2019-104
Spintronics device has been shown to reproduce some functionalities of synapse (i.e. spike-timing-dependent plasticity) ... [more] NLP2019-104
MRIS, ITE-MMS, IEE-MAG 2019-10-18
Fukuoka Kyushu University (Nishijin Plaza) Observation of the spin-dependent Peltier effect in lateral spin valve
Ryoga Suko, Ryo Matsuda, Daiki Ito, Taisei Ariki, Kohei Ohnishi, Takashi Kimura (Kyushu Univ.) MRIS2019-30
The discovery of the thermally excited spin current promoted the research on the conversion between the spin and heat, s... [more] MRIS2019-30
MRIS, ITE-MMS 2018-10-19
Osaka Osaka University [Invited Talk] Printed electronics and spintronics using organic semiconductors
Shun Watanabe (Univ. of Tokyo) MRIS2018-17
Organic semiconductors are being investigated as an emerging class of materials for electronics and spintronics, not onl... [more] MRIS2018-17
ED, MW 2018-01-25
Tokyo Kikai-Shinko-Kaikan Bldg. Microwave-excited phenomena in nano/micro-system
Akinobu Yamaguchi (Univ. Hyogo), Mitsuyoshi Kishihara (Okayama Pref. Univ.), Masaya Takeuchi, Yuichi Utsumi (Univ. Hyogo) ED2017-93 MW2017-162
We demonstrated the fabrication of nano/micro-system for studying the magnetization dynamics in artificial magnets on a ... [more] ED2017-93 MW2017-162
Saitama Saitama University Mechanical generation of spin and spin current
Mamoru Matsuo (Tohoku Univ.), Yuichi Ohnuma, Sadamichi Maekawa (JAEA)
We review the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, t... [more]
MRIS, ITE-MMS 2017-10-20
Niigata Kashiwazaki energy hall, Niigata Temperature dependence of spin relaxation in ferromagnetic/nonmagnetic bilayer channel
Tatsuya Nomura, Taisei Ariki, Takashi Kimura (Kyushu Univ.)
We perform spin transport in a ferromagnetic/nonmagnetic bilayer channel. When the spin current is flown in the nonmagne... [more]
SDM 2017-01-30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Voltage-Control Spintronics Memory (VOCSM)Having Potentials of Ultra-Low Energy-Consumption and High-Density
Hiroaki Yoda, , , , , , , , , , , , , , (Toshiba) SDM2016-136
We propose a new spintronics-based memory employing voltage-control-magnetic-anisotropy effect as a bit selecting princi... [more] SDM2016-136
MRIS, ITE-MMS 2016-10-21
Fukuoka Nishijin Plaza Efficient generation of thermal spin injection driven by ferromagnetic resonance
Kazuto Yamanoi, Yuki Yokotani, Takashi Kimura (Kyushu Univ.)
We [more]
ICD, SDM, ITE-IST [detail] 2016-08-03
Osaka Central Electric Club [Invited Talk] A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device -- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits --
Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31
Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-per... [more] SDM2016-63 ICD2016-31
MRIS, ITE-MMS 2015-07-10
Tokyo Waseda Univ. Addition of perpendicular magnetic anisotropy to full-Heulser Co2FeSi and Co2MnSi alloy thin films
Yota Takamura, Naoki Matsushita, Kouki Shinohara, Takahiro Suzuki, Yorinobu Fujino (Tokyo Tech), Yoshiaki Sonobe (Samsung), Shigeki Nakagawa (Tokyo Tech) MR2015-14
We developed additional technique of perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co$_2$FeSi (C... [more] MR2015-14
MRIS, ITE-MMS, ITE-CE [detail] 2015-01-23
Osaka   Room Temperature Operation of Silicon Spin-MOSFET
Takayuki Tahara (Kyoto Univ.), Tomoyuki Sasaki (TDK), Yuichiro Ando (Kyoto Univ.), Makoto Kameno (Osaka Univ.), Hayato Koike, Ryo Oikawa (TDK), Toshio Suzuki (AIT), Masashi Shiraishi (Kyoto Univ.) MR2014-43
A technology for CMOS transistors has been developing for many years by establishing nano-lithography and high density i... [more] MR2014-43
ITE-MMS, ITE-CE, MRIS [detail] 2014-01-24
Osaka Panasonic Shoushin-Kaikan Bldg. Realization of highly efficient spin injection using Fe3Si by dynamical method
Kouki Ichiba, Yuichiro Ando (Osaka Univ.), Shinya Yamada (Kyushu Univ.), Eiji Shikoh (Osaka City Univ.), Teruya Shinjo (Osaka Univ.), Kohei Hamaya (Kyushu Univ.), Masashi Shiraishi (Osaka Univ.) MR2013-36
Recently, control of pure spin current have attracted a great deal of attention as a method of dissipation-free informat... [more] MR2013-36
MRIS, ITE-MMS 2013-10-25
Fukuoka Fukuoka-Kotsu-Center Bldg., Hakata Bus Terminal [Invited Talk] Giant tunnel magnetoresistance in perfectly lattice-matched magnetic tunnel junctions -- Current status of spinel MgAl2O4-based tunnel barriers --
Hiroaki Sukegawa, Koichiro Inomata, Seiji Mitani (NIMS) MR2013-18
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice m... [more] MR2013-18
ICD 2013-04-11
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Talk] Restructuring of Memory Hierarchy in Computing System with Spintronics-Based Technologies
Tetsuo Endoh (Tohoku Univ.) ICD2013-5
In the memory hierarchy of current computer systems, the trade-off between their performance and power consumption is be... [more] ICD2013-5
ICD 2013-04-11
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure
Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2013-7
Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge num... [more] ICD2013-7
ICD 2013-04-11
Ibaraki Advanced Industrial Science and Technology (AIST) Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI
Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] ICD2013-9
ITE-MMS, ITE-CE, MRIS [detail] 2013-01-25
Osaka   Dynamical spin injection into p-type Ge at room temperature
Mariko Koike, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo (Osaka Univ.), Shinya Yamada, Kohei Hamaya (Kyusyu Univ.), Masashi Shiraishi (Osaka Univ.) MR2012-43
Since germanium (Ge) originally has a relatively-high field-effect-mobility among semiconducting materials and its cryst... [more] MR2012-43
ED 2012-07-27
Fukui Fukui University Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration
Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST) ED2012-52
lectrical spin injection experiments are carried out in CoFe – high In-content InGaAs/InAlAs two-dimensional elect... [more] ED2012-52
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