Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD, CPSY |
2016-12-15 15:30 |
Tokyo |
Tokyo Institute of Technology |
[Poster Presentation]
Performance Evaluation of Storage Class Memory based SSD in Consideration of Reliability Yutaka Adachi, Hirofumi Takishita, Ken Takeuchi (Chuo Univ.) ICD2016-68 CPSY2016-74 |
The future Storage Class Memory (SCM) is equivalent to NAND Flash in terms of cost. SCM is high performance compared wit... [more] |
ICD2016-68 CPSY2016-74 p.55 |
ICD, CPSY |
2016-12-15 15:30 |
Tokyo |
Tokyo Institute of Technology |
[Poster Presentation]
Error Pattern Analysis among Scaled Generations of NAND Flash Memories Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi (Chuo Univ.) ICD2016-69 CPSY2016-75 |
The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory ce... [more] |
ICD2016-69 CPSY2016-75 p.57 |
ICD, CPSY |
2015-12-17 16:00 |
Kyoto |
Kyoto Institute of Technology |
[Poster Presentation]
Performance Evaluation of Solid-State-Drives (SSDs) by Considering the effect of Error-correcting code Yusuke Yamaga, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-71 CPSY2015-84 |
In the NAND flash memory based solid-state drives (SSDs), reliability is guaranteed by error correcting code (ECC). Conv... [more] |
ICD2015-71 CPSY2015-84 p.41 |
ICD, CPSY |
2015-12-17 16:00 |
Kyoto |
Kyoto Institute of Technology |
[Poster Presentation]
Bit-Error Analysis in TLC NAND flash memories. Yoshiaki Deguchi, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-75 CPSY2015-88 |
The capacity of NAND flash memory can be expanded by increasing the bit density. In particular, 3-bit/cell triple-level ... [more] |
ICD2015-75 CPSY2015-88 p.49 |
ICD, CPSY |
2015-12-17 16:00 |
Kyoto |
Kyoto Institute of Technology |
[Poster Presentation]
Error Tendency Analysis in NAND Flash Memory Yoshio Nakamura, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2015-76 CPSY2015-89 |
Program-disturb and data-retention degrade the reliability of NAND flash memory. During program-disturb, VTH of the memo... [more] |
ICD2015-76 CPSY2015-89 p.51 |
ICD, CPSY |
2014-12-01 15:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Poster Presentation]
A High-Performance Solid-State Drives with LBA Scrambler Tomoaki Yamada, Chao Sun, Ken Takeuchi (Chuo Univ.) ICD2014-87 CPSY2014-99 |
In the NAND flash memory based Solid-state drives (SSDs), since in-place overwrite is prohibited in NAND flash, the oper... [more] |
ICD2014-87 CPSY2014-99 p.53 |
ICD, CPSY |
2014-12-01 15:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Poster Presentation]
A Low-voltage Operation Programing-voltage Generator for ReRAM Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Ken Takeuchi (Chuo univ.) ICD2014-93 CPSY2014-105 |
Although the conventional Solid State Drive (SSD) consist of only NAND flash memory, Resistive RAM (ReRAM) and NAND flas... [more] |
ICD2014-93 CPSY2014-105 p.65 |
ICD |
2014-01-28 15:00 |
Kyoto |
Kyoto Univ. Tokeidai Kinenkan |
[Poster Presentation]
Error-Prediction LDPC for NAND Flash Memory Tsukasa Tokutomi (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo.), Ken Takeuchi (Chuo Univ.) ICD2013-108 |
Error-Prediction LDPC (EP-LDPC) error correcting code (ECC) was proposed to improve the reliability of NAND flash memori... [more] |
ICD2013-108 p.23 |
ICD |
2013-04-12 11:10 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Lecture]
A High Performance Storage Class Memory/MLC NAND Hybrid SSD with Anti-Fragmentation Algorithm Kousuke Miyaji (Chuo Univ.), Hiroki Fujii (Univ. of Tokyo), Koh Johguchi (Chuo Univ.), Kazuhide Higuchi, Chao Sun (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-15 |
A 3D through-silicon-via (TSV) -integrated hybrid storage class memory (SCM)/multi-level-cell (MLC) NAND solid-state dri... [more] |
ICD2013-15 pp.73-78 |
ICD |
2013-04-12 12:00 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Lecture]
An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD Kousuke Miyaji, Koh Johguchi (Chuo Univ.), Kazuhide Higuchi (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-17 |
An integrated variable temperature coefficient (TC) reference generator for multi-level cell phase change memory (PCM)/N... [more] |
ICD2013-17 pp.85-90 |
ICD, IPSJ-ARC |
2013-02-01 11:10 |
Tokyo |
|
Data management algorithm for 3D Hybrid ReRAM/MLC NAND SSD and its performance evaluation Shogo Hachiya, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi (Chuo Univ.) ICD2012-125 |
A 3D Hybrid ReRAM/MLC NAND SSD is proposed. ReRAM is used for storage class memory (SCM). The hybrid SSD realizes 11 tim... [more] |
ICD2012-125 pp.39-43 |
ICD |
2012-12-17 15:55 |
Tokyo |
Tokyo Tech Front |
[Poster Presentation]
Analyses of Code Length Dependence of Asymmetric Code for Highly Reliable SSDs with 20-40nm NAND Flash Memories Masafumi Doi (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2012-95 |
Asymmetric code was proposed for highly reliable SSDs. The asymmetric code increases the population of “1”s or “0”s in p... [more] |
ICD2012-95 p.33 |
MRIS, ITE-MMS |
2012-03-16 13:00 |
Aichi |
Nagoya Univ. |
Proposal of the Raising in Reliance of SSD to Power Failure Tatsunori Tsujimura (Mitsubishi Electric) MR2011-41 |
SSD (Solid State Drive) has spread, and SSD has cache memory to reduce the access time from external machines.But there ... [more] |
MR2011-41 pp.1-5 |
ICD |
2011-12-15 16:10 |
Osaka |
|
[Poster Presentation]
4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives Teruyoshi Hatanaka, Ken Takeuchi (Tokyo Univ.) ICD2011-117 |
A wide output voltage range from 10 V to 20 V voltage generator system is proposed for 3D-SSDs. The circuits are fabrica... [more] |
ICD2011-117 pp.81-86 |
DC |
2011-10-20 13:00 |
Tokyo |
|
Data Movement Algorithm for Flash SSD with Long Life-time Daiki Mamada, Masato Kitakami (Chiba Univ.) DC2011-22 |
Recently,storage capacity of flash memories is rapidly increasing,so the solid-state drive (SSD) constituted by the flas... [more] |
DC2011-22 pp.13-18 |
ICD |
2011-04-19 14:25 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16 |
A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV... [more] |
ICD2011-16 pp.87-92 |
DC |
2009-10-20 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Prolongation of Lifetime and the Evaluation Method of Dependable SSD Kensuke Tai, Masato Kitakami (Chiba Univ.) DC2009-23 |
Storage capacity of solid-state drive (SSD) which has a large number of flash memories is rapidly increasing in recent y... [more] |
DC2009-23 pp.7-12 |
ICD |
2008-04-17 14:20 |
Tokyo |
|
[Invited Talk]
NAND Flash Memory and SSD Ken Takeuchi (University of Tokyo) ICD2008-6 |
The NAND flash memory based SSD, Solid-State Drive for a PC application has been paid a lot of attention as the cost of ... [more] |
ICD2008-6 pp.31-36 |