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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Performance Evaluation of Storage Class Memory based SSD in Consideration of Reliability
Yutaka Adachi, Hirofumi Takishita, Ken Takeuchi (Chuo Univ.) ICD2016-68 CPSY2016-74
The future Storage Class Memory (SCM) is equivalent to NAND Flash in terms of cost. SCM is high performance compared wit... [more] ICD2016-68 CPSY2016-74
p.55
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Error Pattern Analysis among Scaled Generations of NAND Flash Memories
Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi (Chuo Univ.) ICD2016-69 CPSY2016-75
The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory ce... [more] ICD2016-69 CPSY2016-75
p.57
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Performance Evaluation of Solid-State-Drives (SSDs) by Considering the effect of Error-correcting code
Yusuke Yamaga, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-71 CPSY2015-84
In the NAND flash memory based solid-state drives (SSDs), reliability is guaranteed by error correcting code (ECC). Conv... [more] ICD2015-71 CPSY2015-84
p.41
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Bit-Error Analysis in TLC NAND flash memories.
Yoshiaki Deguchi, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-75 CPSY2015-88
The capacity of NAND flash memory can be expanded by increasing the bit density. In particular, 3-bit/cell triple-level ... [more] ICD2015-75 CPSY2015-88
p.49
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Error Tendency Analysis in NAND Flash Memory
Yoshio Nakamura, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2015-76 CPSY2015-89
Program-disturb and data-retention degrade the reliability of NAND flash memory. During program-disturb, VTH of the memo... [more] ICD2015-76 CPSY2015-89
p.51
ICD, CPSY 2014-12-01
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Poster Presentation] A High-Performance Solid-State Drives with LBA Scrambler
Tomoaki Yamada, Chao Sun, Ken Takeuchi (Chuo Univ.) ICD2014-87 CPSY2014-99
In the NAND flash memory based Solid-state drives (SSDs), since in-place overwrite is prohibited in NAND flash, the oper... [more] ICD2014-87 CPSY2014-99
p.53
ICD, CPSY 2014-12-01
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Poster Presentation] A Low-voltage Operation Programing-voltage Generator for ReRAM
Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Ken Takeuchi (Chuo univ.) ICD2014-93 CPSY2014-105
Although the conventional Solid State Drive (SSD) consist of only NAND flash memory, Resistive RAM (ReRAM) and NAND flas... [more] ICD2014-93 CPSY2014-105
p.65
ICD 2014-01-28
15:00
Kyoto Kyoto Univ. Tokeidai Kinenkan [Poster Presentation] Error-Prediction LDPC for NAND Flash Memory
Tsukasa Tokutomi (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo.), Ken Takeuchi (Chuo Univ.) ICD2013-108
Error-Prediction LDPC (EP-LDPC) error correcting code (ECC) was proposed to improve the reliability of NAND flash memori... [more] ICD2013-108
p.23
ICD 2013-04-12
11:10
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] A High Performance Storage Class Memory/MLC NAND Hybrid SSD with Anti-Fragmentation Algorithm
Kousuke Miyaji (Chuo Univ.), Hiroki Fujii (Univ. of Tokyo), Koh Johguchi (Chuo Univ.), Kazuhide Higuchi, Chao Sun (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-15
A 3D through-silicon-via (TSV) -integrated hybrid storage class memory (SCM)/multi-level-cell (MLC) NAND solid-state dri... [more] ICD2013-15
pp.73-78
ICD 2013-04-12
12:00
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD
Kousuke Miyaji, Koh Johguchi (Chuo Univ.), Kazuhide Higuchi (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-17
An integrated variable temperature coefficient (TC) reference generator for multi-level cell phase change memory (PCM)/N... [more] ICD2013-17
pp.85-90
ICD, IPSJ-ARC 2013-02-01
11:10
Tokyo   Data management algorithm for 3D Hybrid ReRAM/MLC NAND SSD and its performance evaluation
Shogo Hachiya, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi (Chuo Univ.) ICD2012-125
A 3D Hybrid ReRAM/MLC NAND SSD is proposed. ReRAM is used for storage class memory (SCM). The hybrid SSD realizes 11 tim... [more] ICD2012-125
pp.39-43
ICD 2012-12-17
15:55
Tokyo Tokyo Tech Front [Poster Presentation] Analyses of Code Length Dependence of Asymmetric Code for Highly Reliable SSDs with 20-40nm NAND Flash Memories
Masafumi Doi (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2012-95
Asymmetric code was proposed for highly reliable SSDs. The asymmetric code increases the population of “1”s or “0”s in p... [more] ICD2012-95
p.33
MRIS, ITE-MMS 2012-03-16
13:00
Aichi Nagoya Univ. Proposal of the Raising in Reliance of SSD to Power Failure
Tatsunori Tsujimura (Mitsubishi Electric) MR2011-41
SSD (Solid State Drive) has spread, and SSD has cache memory to reduce the access time from external machines.But there ... [more] MR2011-41
pp.1-5
ICD 2011-12-15
16:10
Osaka   [Poster Presentation] 4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives
Teruyoshi Hatanaka, Ken Takeuchi (Tokyo Univ.) ICD2011-117
A wide output voltage range from 10 V to 20 V voltage generator system is proposed for 3D-SSDs. The circuits are fabrica... [more] ICD2011-117
pp.81-86
DC 2011-10-20
13:00
Tokyo   Data Movement Algorithm for Flash SSD with Long Life-time
Daiki Mamada, Masato Kitakami (Chiba Univ.) DC2011-22
Recently,storage capacity of flash memories is rapidly increasing,so the solid-state drive (SSD) constituted by the flas... [more] DC2011-22
pp.13-18
ICD 2011-04-19
14:25
Hyogo Kobe University Takigawa Memorial Hall Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System
Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16
A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV... [more] ICD2011-16
pp.87-92
DC 2009-10-20
11:00
Tokyo Kikai-Shinko-Kaikan Bldg. Prolongation of Lifetime and the Evaluation Method of Dependable SSD
Kensuke Tai, Masato Kitakami (Chiba Univ.) DC2009-23
Storage capacity of solid-state drive (SSD) which has a large number of flash memories is rapidly increasing in recent y... [more] DC2009-23
pp.7-12
ICD 2008-04-17
14:20
Tokyo   [Invited Talk] NAND Flash Memory and SSD
Ken Takeuchi (University of Tokyo) ICD2008-6
The NAND flash memory based SSD, Solid-State Drive for a PC application has been paid a lot of attention as the cost of ... [more] ICD2008-6
pp.31-36
 Results 1 - 18 of 18  /   
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