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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-11-30 13:55 |
Shizuoka | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.)  ED2023-16 CPM2023-58 LQE2023-56 |
Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue f... [more] | ED2023-16 CPM2023-58 LQE2023-56 pp.11-14 |
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| MRIS, ITE-MMS | 2023-06-08 15:50 |
Miyagi | Tohoku Univ. （RIEC) (Primary: On-site, Secondary: Online) |
Development of CoPtCr-oxide granular typed sputtered tape with oxygen deficiency compensation from Co oxide-added composite target Junichi Tachibana, HIroyuki Kobayashi, Teruo Sai, Takashi Aizawa (Sony Storage Media Solutions), Shin Saito (Tohoku Univ.) MRIS2023-4 |
The oxidization in the granular recording layer controlled by changing the amount of Co3O4 added to the CoPtCr-SiO2 comp... [more] | MRIS2023-4 pp.21-26 |
| CPM, ED, LQE | 2022-11-24 15:45 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech) ED2022-37 CPM2022-62 LQE2022-70 |
Degradation of electrical characteristics due to etching damage during recess structure formation has been an issue for ... [more] | ED2022-37 CPM2022-62 LQE2022-70 pp.61-64 |
| SDM | 2022-02-04 10:40 |
Online | Online | [Invited Talk]
Printed Electronics using low-temperature catalyzed solution-processed SiO2 Takeo Minari (NIMS), Qingqing Sun (Zhengzhou Univ.), Lingying Li (NIMS), Wanli Li (Jiangnan Univ.), Xuying Liu (Zhengzhou Univ.) SDM2021-76 |
Fabrication of electronics devices by Printed Electronics has attracted considerable interest because of the low-process... [more] | SDM2021-76 pp.9-12 |
| SDM | 2021-11-12 09:30 |
Online | Online | [Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60 |
SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] | SDM2021-60 pp.38-42 |
| SCE | 2021-01-19 13:30 |
Online | Online | Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors Takahiro Kikuchi, Satoshi Kohjiro, Ryota Hayakawa, Go Fujii, Fuminori Hirayama, Masahiro Ukibe (AIST), Ryan Smith, Masashi Ohno (U-Tokyo) SCE2020-18 |
We have been developing the Gamma-ray Transition Edge Sensors (TESs) which is able to achieve high energy resolution. Mu... [more] | SCE2020-18 pp.7-12 |
| LQE, CPM, ED | 2020-11-26 13:50 |
Online | Online | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage c... [more] | ED2020-8 CPM2020-29 LQE2020-59 pp.29-32 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-23 14:00 |
Tottori | Tottori Univ. | [Poster Presentation]
Excitation and luminescent characteristics LaSiO2N:Eu red phosphors synthesized in NH3 KenKinoshita, Misa Kawashima, Takuya Sohma, Tadashi Ishigaki (Tottori Univ.), Takashi Kunimoto (Tokusima Bunri Univ.), Koutoku Ohmi (Tottori Univ.) EID2019-9 |
Red Phosphor LaSiO2N:Eu has been synthesized in NH3 atmosphere. The synthesized sample shows a red emission due to Eu3+ ... [more] | EID2019-9 pp.45-48 |
| CPM, LQE, ED | 2019-11-21 13:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] | ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
| SDM | 2019-01-29 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] | SDM2018-87 pp.27-30 |
| PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] | 2019-01-17 16:20 |
Osaka | Osaka University Nakanoshima Center | Surface Improvement Investigation of Sol-Gel SiO2 Cladding for Waveguide Device Passivation Satoshi Ogawa, Ahmad Syahrin Idris, Yu Han, Haisong Jiang, Kiichi Hamamoto (Kyushu Univ.) PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 |
For exploiting sol-gel SiO2 for waveguide device passivation, plasma-ashing, in addition to 700 ℃ annealing, is proposed... [more] | PN2018-53 EMT2018-87 OPE2018-162 LQE2018-172 EST2018-100 MWP2018-71 pp.127-130 |
| ED, LQE, CPM | 2018-11-29 14:15 |
Aichi | Nagoya Inst. tech. | Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] | ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
| SDM | 2018-06-25 11:40 |
Aichi | Nagoya Univ. VBL3F | Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] | SDM2018-18 pp.11-14 |
| SDM | 2018-06-25 15:15 |
Aichi | Nagoya Univ. VBL3F | Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] | SDM2018-22 pp.29-32 |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| CPM, LQE, ED | 2016-12-13 14:15 |
Kyoto | Kyoto University | Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells Takahiro Imai, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2016-77 CPM2016-110 LQE2016-93 |
(To be available after the conference date) [more] | ED2016-77 CPM2016-110 LQE2016-93 pp.97-101 |
| SDM | 2016-06-29 14:10 |
Tokyo | Campus Innovation Center Tokyo | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40 |
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] | SDM2016-40 pp.43-47 |
| SDM | 2016-06-29 14:45 |
Tokyo | Campus Innovation Center Tokyo | Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41 |
SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] | SDM2016-41 pp.49-52 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2015-06-19 11:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 |
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] | SDM2015-43 pp.27-30 |
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