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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
11:30		 Aichi VBL, Nagoya Univ. [Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43		 We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] SDM2015-43
pp.27-30
SDM 2013-06-18
16:45		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] An attempt for clarification of SiC oxidation mechanism -- Common/different point to Si oxidation --
Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62		 Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] SDM2013-62
pp.91-96
SDM 2012-10-25
15:45		 Miyagi Tohoku Univ. (Niche) AR-XPS and HAX-PES Studies on Chemical bonding states at SiO2/SiC Interfaces
Hazuki Okada, Arata Komatsu, Masato Watanabe (Tokyo City Univ.), Yudai Izumi, Takayuki Muro (JASRI), Kentaro Sawano, Hiroshi Nohira (Tokyo City Univ.) SDM2012-90		 (To be available after the conference date) [more] SDM2012-90
pp.5-9
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