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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-06-17
15:15
Ishikawa JAIST Fabrication of high-frequency and high-power AlGaN/GaN HEMTs
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] ED2010-38
pp.25-30
ED, LQE, CPM 2009-11-20
15:50
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band
Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] ED2009-159 CPM2009-133 LQE2009-138
pp.151-155
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