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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 51  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2018-08-07
12:55
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16
In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the result... [more] SDM2018-29 ICD2018-16
pp.21-24
LQE 2018-07-13
10:00
Hokkaido   [Invited Talk] High performance Si and SiGe based optical modulator and its application to optical integrated circuit
Junichi Fujikata, Masataka Noguchi, Shigeki Takahashi, Kazuhiko Kurata (PETRA), Mitsuru Takenaka (Univ. of Tokyo), Takahiro Nakamura (PETRA) LQE2018-30
Si optical modulators for MOS (metal-oxide-semiconductor)-junction-type and pn-junction-type with strained p-type SiGe w... [more] LQE2018-30
pp.39-42
MW, WPT 2018-04-27
14:50
Tokyo Kikai-Shinko-Kaikan Building S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate
Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] WPT2018-5 MW2018-5
pp.19-23
ED, MW 2018-01-26
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT
Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] ED2017-98 MW2017-167
pp.25-29
ED 2016-07-24
09:55
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current
Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-33
Hole-tunneling Si1-xGex/Si asymmetric-double-quantum-well resonant tunneling diode (ASDQW p-RTD) was optimized in terms ... [more] ED2016-33
pp.31-34
MW 2016-05-20
11:10
Kyoto Kyoto Univ. A Fast Chirp Generation PLL-IC using Polarity Switching Loop Filter
Koji Tsutsumi, Eiji Taniguchi (Mitsubishi Electric) MW2016-19
A PLL (Phase Locked Loop) is used to generate frequency chirp signal for FMCW radars. The chirp generator using PLL has ... [more] MW2016-19
pp.47-50
ED, SDM 2016-03-03
15:55
Hokkaido Centennial Hall, Hokkaido Univ. Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector
Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa (Shizuoka Univ.) ED2015-124 SDM2015-131
With the aim of realizing high-sensitivity thermopile infrared-photodetectors, we have investigated the enhancement of t... [more] ED2015-124 SDM2015-131
pp.19-22
SDM 2016-01-28
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] CMOS photonics technologies based on heterogeneous integration on Si
Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kan, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, SangHyeon Kim, Shinichi Takagi (Univ. of Tokyo) SDM2015-124
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic in... [more] SDM2015-124
pp.17-20
CPM, OPE, LQE, R, EMD 2015-08-28
10:30
Aomori Aomori-Bussankan-Asupamu A 50-Gb/s Optical Transmitter Using a Lens-integrated DFB-LD and a Laser Diode Driver based on 0.18-um SiGe Process
Takashi Takemoto, Yasunobu Matsuoka, Hidenori Yonezawa, Hiroki Yamashita, Koichiro Adachi, Takahiro Nakamura, Hideo Arimoto (Hitachi) R2015-39 EMD2015-47 CPM2015-63 OPE2015-78 LQE2015-47
The current explosive increase in the data traffic causes a rapid expansion in the total throughput for intra-rack and r... [more] R2015-39 EMD2015-47 CPM2015-63 OPE2015-78 LQE2015-47
pp.81-86
SDM, ED 2015-02-05
14:15
Hokkaido Hokkaido Univ. Seebeck coefficient in crystalline SiGe for high-efficiency thermoelectric devices
Hiroya Ikeda, Veerappan Manimuthu, Muthusamy Omprakash, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan (Shizuoka Univ.), Yoshinari Kamakura (Osaka Univ.), Yasuhiro Hayakawa (Shizuoka Univ.) ED2014-139 SDM2014-148
We have investigated the enhancement of the thermoelectric performance in order to build high-efficiency power generator... [more] ED2014-139 SDM2014-148
pp.7-11
MW 2014-03-05
13:30
Ehime Ehime University A Self-injection locked VCO with adoptive control of injection phase
Kengo Kawasaki, Koji Tsutsumi, Masaomi Tsuru, Eiji Taniguchi (Mitsubishi Electric) MW2013-217
A self-injection locking is an effective method to reduce the phase noise of the oscillator; however there are some prob... [more] MW2013-217
pp.117-122
ED, MW 2014-01-16
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. A Dual-Band Reflection Type Phase Shifter Using Active Loads
Yuki Shoji, Kazuyoshi Sakamoto, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-119 MW2013-184
A dual-band reflection type phase shifter using active loads is presented for realizing a wide phase-shifting range and ... [more] ED2013-119 MW2013-184
pp.53-56
ED, MW 2014-01-16
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A Stopband-Tunable Dual-Band Low-Noise Differential Amplifier
Kazuyoshi Sakamoto, Yuki Shoji, Yasushi Itoh (Shonan Inst. of Tech.) ED2013-120 MW2013-185
A stopband-tunable dual-band low-noise differential amplifier has been developed for the next generation adaptive and/or... [more] ED2013-120 MW2013-185
pp.57-60
SDM 2013-12-13
13:30
Nara NAIST Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation -- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film --
Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.) SDM2013-126
We examined dependence of the crystallization for a-Ge and a-SiGe on the photon energy. In the storage-ring current of 7... [more] SDM2013-126
pp.61-66
OPE 2012-12-21
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. Differential Optical Receivers with MSM Ge Photodetectors
Makoto Miura, Junichi Fujikata, Masataka Noguchi, Daisuke Okamoto (PETRA), Tsuyoshi Horikawa (AIST), Yasuhiko Arakawa (Univ. of Tokyo) OPE2012-139
In order to explore the photonics-electronics convergence technology integrated on silicon (Si) substrate, germanium (Ge... [more] OPE2012-139
pp.27-31
SDM, ED
(Workshop)
2012-06-29
10:15
Okinawa Okinawa Seinen-kaikan Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel
Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU)
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more]
MW 2012-03-02
10:00
Saga Saga University A Sub-harmonic Injection-locked Oscillator with Multiple Pulse Injection
Koji Tsutsumi, Masaomi Tsuru, Eiji Taniguchi (Mitsubishi Electric) MW2011-180
A locking range of sub-harmonic injection-locked oscillator is inversely proportional to the frequency ratio between inj... [more] MW2011-180
pp.71-75
SDM 2011-10-21
09:50
Miyagi Tohoku Univ. (Niche) Channel strain measurements in 32nm-node CMOSFETs
Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura (Meiji Univ.) SDM2011-104
We performed strain analyses for 32-nm-node MPU by Raman measurements in conjunction with TEM observation. The channel s... [more] SDM2011-104
pp.43-48
CAS, NLP 2011-10-21
09:50
Shizuoka Shizuoka Univ. Low-Power Fully-Integrated K-band Transceiver using Transformer Direct-Stacking/Connecting and Balun Signal-Combining Techniques
Nobuhiro Shiramizu, Akihiro Nakamura, Takahiro Nakamura, Toru Masuda (Hitachi) CAS2011-50 NLP2011-77
A low-power fully-integrated transceiver for K-band wireless communication was developed using 0.18-um SiGe BiCMOS techn... [more] CAS2011-50 NLP2011-77
pp.101-106
EMT, OPE, MW, IEE-EMT [detail] 2010-07-30
10:50
Hokkaido Hokkaido Univ. Gain and Bandwidth Tunable Multi-Band Differential Amplifiers
Yasushi Itoh, Kazuyoshi Sakamoto, Wei Cao, Keita Sakurai, Toshihiko Murata (Shonan Inst. of Tech.) MW2010-60 OPE2010-45
An L-band gain and bandwidth tunable low-noise differential amplifier has been developed for the next generation reconfi... [more] MW2010-60 OPE2010-45
pp.193-197
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