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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2016-05-20 11:05 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)  ED2016-24 CPM2016-12 SDM2016-29 |
The heteroepitaxial growth of GaSb films via Ga-induced surface phase (Si(111)-√3×√3-Ga) on Si(111) was studied. The gro... [more] | ED2016-24 CPM2016-12 SDM2016-29 pp.51-54 |
| CPM, LQE, ED | 2013-11-29 11:00 |
Osaka | Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D) ED2013-79 CPM2013-138 LQE2013-114 |
Since GaN is desired for optical and electronic devices, therefore reduction of substrate cost is very important topic. ... [more] | ED2013-79 CPM2013-138 LQE2013-114 pp.71-74 |
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| ED | 2013-08-09 09:50 |
Toyama | University of Toyama | Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science) ED2013-46 |
Gallium antimonide (GaSb) nanostructures on Si (Silicon) have been intensely studied due to the application as a near-in... [more] | ED2013-46 pp.43-48 |
| ED | 2013-08-09 11:20 |
Toyama | University of Toyama | Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 |
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] | ED2013-49 pp.61-65 |
| CPM | 2011-10-27 10:20 |
Fukui | Fukui Univ. | MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120 |
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] | CPM2011-120 pp.55-58 |
| ED | 2011-07-30 13:55 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | InSb MOS diodes on a Si(111) substrate grown by surface reconstruction ontrolled epitaxy Azusa Kadoda, Tatsuya Iwasugi, Kimihiko Nakatani, Koji Nakayama, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2011-55 |
We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, ... [more] | ED2011-55 pp.91-96 |
| ED | 2008-06-14 11:20 |
Ishikawa | Kanazawa University | Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama) ED2008-37 |
The InSb films grown via In-Sb bi-layer (Si(111)-2×2-InSb surface reconstruction) rotates by 30 ° with respect to Si sub... [more] | ED2008-37 pp.81-84 |
| ED, CPM, LQE | 2006-10-06 16:50 |
Kyoto | Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.) |
The problem of ECR-MBE method is to generate the N2+ ion from ECR plasma during growth that damages the film. The bad in... [more] | ED2006-175 CPM2006-112 LQE2006-79 pp.121-125 |
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