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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-21 13:00 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82 |
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] |
ED2019-39 CPM2019-58 LQE2019-82 pp.29-32 |
ED |
2014-12-22 15:00 |
Miyagi |
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Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] |
ED2014-102 pp.21-26 |
ED |
2012-12-17 13:00 |
Miyagi |
Tohoku University |
DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] |
ED2012-93 pp.1-6 |
SDM |
2012-11-16 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS Daiki Sato, Yasuhisa Omura (Kansai Univ.) SDM2012-105 |
This paper introduces an advanced performance of cross-current tetrode (XCT) SOI CMOS devices and demonstrates their out... [more] |
SDM2012-105 pp.31-36 |
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