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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:00
Shizuoka Shizuoka Univ. (Hamamatsu) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] ED2019-39 CPM2019-58 LQE2019-82
pp.29-32
ED 2014-12-22
15:00
Miyagi   Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] ED2014-102
pp.21-26
ED 2012-12-17
13:00
Miyagi Tohoku University DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects
Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2012-93
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. W... [more] ED2012-93
pp.1-6
SDM 2012-11-16
10:25
Tokyo Kikai-Shinko-Kaikan Bldg Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS
Daiki Sato, Yasuhisa Omura (Kansai Univ.) SDM2012-105
This paper introduces an advanced performance of cross-current tetrode (XCT) SOI CMOS devices and demonstrates their out... [more] SDM2012-105
pp.31-36
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