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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 16:15 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Performance Analysis of Wide Bandgap Semiconductor SBD for Microwave Power Transmission Yasuo Ohno, Hiroko Itoh, Tomomi Hiraoka (Laser Systems), Masataka Higashiwaki (Osaka Metropolitan Univ.) |
(To be available after the conference date) [more] | |
| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.)  ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
|
| ED, CPM, LQE | 2021-11-26 13:00 |
Online | Online | Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui), Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu (Fuji electric co.) ED2021-28 CPM2021-62 LQE2021-40 |
We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three diff... [more] | ED2021-28 CPM2021-62 LQE2021-40 pp.63-66 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:30 |
Online | Online | [Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] | EID2020-10 SDM2020-44 pp.37-41 |
| WPT (2nd) |
2019-10-31 - 2019-11-02 |
Overseas | Xidian University | A Microwave High Power Rectifier Using GaAs pHENT Schottky Diode Fei Cheng, Ping Lu, Bing Zhang, Kama Huang (Sichuan Univ.) |
In this paper, a microwave high power rectifier using GaAs pHENT Schottky diode is proposed. Series single diode topolog... [more] | |
| WPT (2nd) |
2019-10-31 - 2019-11-02 |
Overseas | Xidian University | Microwave rectifying based on Schottky diodes with enhanced dynamic ranges Zhongqi He, Pengde Wu, Changjun Liu (Sichuan Univ.) |
Microwave rectifying is important in a microwave wireless power transmission system. The input microwave power to a rect... [more] | |
| WPT (2nd) |
2018-11-02 - 2018-11-04 |
Miyagi | Tohoku University | The Fundamental Experiment of Microwave Wireless Power Transmission to UAV Yudai Hashimoto (NTT Communications Corp.), Qiaowei Yuan, Takumi Aoki (NIT, Sendai College) |
The research on wireless power transmission using microwaves in recent years has been advanced greatly. In this paper, f... [more] | |
| SDM | 2018-10-18 10:50 |
Miyagi | Niche, Tohoku Univ. | Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59 |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] | SDM2018-59 pp.35-40 |
| SDM, OME | 2018-04-07 14:15 |
Okinawa | Okinawaken Seinen Kaikan | Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8 |
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] | SDM2018-8 OME2018-8 pp.33-36 |
| WPT (2nd) |
2017-12-09 - 2017-12-11 |
Overseas | National University of Singapore(AWPT2017) | High-Efficiency Microwave Rectifying Circuits with Extended Dynamic Range Pengde Wu, Kama Huang, Changjun Liu (Sichuan Univ.) |
In this paper, a microwave rectifier based on elimination of input filter is proposed to operate in a wide range of inpu... [more] | |
| WPT | 2017-03-07 13:25 |
Kyoto | Kyoto Univ. Uji Campus | WPT2016-79 |
To reduce the weight of a satellite, an internal wireless system for satellites was proposed in a previous study. It is ... [more] | WPT2016-79 pp.75-79 |
| CPM, LQE, ED | 2016-12-12 13:00 |
Kyoto | Kyoto University | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] | ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
| CPM, LQE, ED | 2016-12-12 13:25 |
Kyoto | Kyoto University | Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-58 CPM2016-91 LQE2016-74 |
We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky con... [more] | ED2016-58 CPM2016-91 LQE2016-74 pp.5-8 |
| CPM, LQE, ED | 2016-12-12 14:15 |
Kyoto | Kyoto University | Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-60 CPM2016-93 LQE2016-76 |
We fabricated and characterized Au/Ni Schottky contacts on cleaved m-plane free-standing n-GaN surfaces (i) without any ... [more] | ED2016-60 CPM2016-93 LQE2016-76 pp.15-20 |
| WPT | 2016-03-08 09:50 |
Kyoto | Kyoto Univ. Uji Campus | Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87 |
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] | WPT2015-87 pp.61-65 |
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| ED | 2016-01-20 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
GaN Schottky Barrier Diode and Microwave Power Transmission Yasuo Ohno (LaS) ED2015-117 |
GaN based electron devices have high potential for high frequency, high power applications, but applications with high i... [more] | ED2015-117 pp.31-35 |
| ED, LQE, CPM | 2015-11-26 14:25 |
Osaka | Osaka City University Media Center | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] | ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
| ED, CPM, SDM | 2015-05-28 16:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] | ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
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