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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-10-13 16:20 |
Miyagi | Niche, Tohoku Univ. | Formation and basic evaluation of gallium oxide thin film on sapphire substrate Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college)  SDM2023-59 |
Recently, the development of wide bandgap semiconductor materials has become increasingly important. In particular, ther... [more] | SDM2023-59 pp.34-39 |
| LQE, CPM, ED | 2017-12-01 14:45 |
Aichi | Nagoya Inst. tech. | Homoepitaxial growth on sputtered AlN templates by MOVPE Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79 |
AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its ther... [more] | ED2017-66 CPM2017-109 LQE2017-79 pp.83-86 |
| CPM | 2017-10-04 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The Influence of the Free Electron Laser Irradiation on Single-Walled Carbon Nanotubes Grown on r-plane Sapphire Substrates Rohit Sharma, Kento Honobe, Yuuki Takahashi, Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.) CPM2017-59 |
Optimized condition was investigated for high quality in-plain aligned single-walled carbon nanotubes (SWNTs) on r-plane... [more] | CPM2017-59 pp.1-4 |
| ED, LQE, CPM | 2015-11-26 10:55 |
Osaka | Osaka City University Media Center | Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2015-69 CPM2015-104 LQE2015-101 |
AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent therm... [more] | ED2015-69 CPM2015-104 LQE2015-101 pp.5-9 |
| ED, LQE, CPM | 2015-11-26 11:20 |
Osaka | Osaka City University Media Center | AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Motoaki Iwaya, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2015-70 CPM2015-105 LQE2015-102 |
AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN ... [more] | ED2015-70 CPM2015-105 LQE2015-102 pp.11-14 |
| ICD | 2014-01-28 15:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Poster Presentation]
A Small On-Chip Antenna for Implantable Devices Kenji Okabe, Ippei Akita, Makoto Ishida (Toyohashi Univ. of Tech.) ICD2013-104 |
This paper proposes a low-radiation loss on-chip antenna using sapphire substrate for implantable medical device. An on-... [more] | ICD2013-104 p.13 |
| MW | 2012-10-19 09:00 |
Tochigi | Utsunomiya Univ. | Relative conductivity measurements of a copper-clad dielectric substrate using a sapphire rod resonator Masayuki Tsunemitsu (Saitama Univ.), Yoshio Kobayashi (SUMTEC ,Inc.), Zhewang Ma (Saitama Univ.) MW2012-97 |
The two rod resonator method and the one rod resonator method have been commonly used to measure the surface relative co... [more] | MW2012-97 pp.93-98 |
| ICD, SDM | 2012-08-03 10:05 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | [Invited Talk]
A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47 |
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] | SDM2012-79 ICD2012-47 pp.89-92 |
| LQE, ED, CPM | 2011-11-17 10:30 |
Kyoto | Katsura Hall，Kyoto Univ. | Control of interlayer on MOVPE growth of AlN on sapphire substrate Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) ED2011-74 CPM2011-123 LQE2011-97 |
The strong demands for high-efficiency light-emitting diodes and for high-sensitivity sensors in the deep-ultraviolet (U... [more] | ED2011-74 CPM2011-123 LQE2011-97 pp.5-10 |
| MW | 2011-10-21 09:50 |
Tokyo | The University of Electro-Communications | Measurements of Complex Permittivity Anisotropy in Plane of a Sapphire Substrate Shuhei Wadayama (Saitama Univ.), Yoshio Kobayashi (SUMTEC), Zhewang Ma (Saitama Univ.) MW2011-102 |
We proposed a measurement method to evaluate complex permittivity anisotropy in plane for dielectric laminate substrates... [more] | MW2011-102 pp.89-94 |
| ED | 2010-12-17 10:35 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | [Invited Talk]
GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167 |
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] | ED2010-167 pp.53-58 |
| ED, LQE, CPM | 2009-11-19 09:25 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108 |
{11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-... [more] | ED2009-129 CPM2009-103 LQE2009-108 pp.5-8 |
| MW | 2008-08-28 14:20 |
Osaka | Osaka-Univ. (Toyonaka) | K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] | MW2008-85 pp.37-40 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| SDM, ED | 2008-07-11 14:20 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122 |
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] | ED2008-103 SDM2008-122 pp.331-335 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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| LQE, ED, CPM | 2005-10-13 10:10 |
Shiga | Ritsumeikan Univ. | (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE
-- Investigation of Non-polar InN -- Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.) |
A-plane (11-20) InN has been successfully grown on R-plane (10-12) sapphire substrate by electron cyclotron resonance pl... [more] | ED2005-120 CPM2005-107 LQE2005-47 pp.9-12 |
| MW, ED | 2005-01-18 11:35 |
Tokyo | - Makoto Miyoshi (NIT/NGK Insulators), -, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.), -, Tomohiko Shibata, Mitsuhiro Tanaka, - (NGK) |
Al0.26Ga0.74N/AlN/GaN heterostructures were grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. The ver... [more] | ED2004-217 MW2004-224 pp.31-35 |
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