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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2020-01-31 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.)  ED2019-98 MW2019-132 |
Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] | ED2019-98 MW2019-132 pp.25-28 |
| ED, LQE, CPM | 2018-11-29 14:15 |
Aichi | Nagoya Inst. tech. | Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89 |
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] | ED2018-35 CPM2018-69 LQE2018-89 pp.13-16 |
| LQE, CPM, ED | 2017-11-30 15:50 |
Aichi | Nagoya Inst. tech. | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] | ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
| CPM, LQE, ED | 2016-12-12 17:00 |
Kyoto | Kyoto University | Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobilit... [more] | ED2016-66 CPM2016-99 LQE2016-82 pp.45-50 |
| SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa | Okinawa Seinen-kaikan | Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] | |
| SDM | 2011-10-21 14:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110 |
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] | SDM2011-110 pp.73-78 |
| MBE | 2006-03-16 09:45 |
Tokyo | Adaptation in visual flow perception Eiki Hida, Shun Takayama, Masaya Murata (Tamagawa Univ.) |
Visual flow caused by ego-motion provides information about three-dimensional structure of the world as well as about se... [more] | MBE2005-139 pp.1-4 |
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