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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SANE | 2023-12-08 15:50 |
Overseas | Surakarta, Indonesia (Primary: On-site, Secondary: Online) |
High Gain 3 Stages RF Power Amplifier S-Band Radar Elyas Palantei, Regita Pramestia Nanang Muh Nawir, Dewiani, Zulfahmi Rizal (UNHAS), Josaphat Tetuko Sri Sumantyo (Chiba Univ.), Josaphat Tetuko Sri Sumantyo (UNS) |
The construction of modern reconfigurable radar technology to flexible in frequency operation and has an accurate sensin... [more] | |
| MW | 2023-11-16 13:25 |
Okinawa | Nago City Industrial Support Center (Okinawa) (Primary: On-site, Secondary: Online) |
Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism Yuta Fuchibe, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric Corp)  MW2023-129 |
We propose a new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converters (DACs). The RP-DAC is a D... [more] | MW2023-129 pp.19-22 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] | 2023-11-16 17:10 |
Kumamoto | Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
Proposed power supply layout for RF circuits with a power panel containing MOM capacitors, bias control lines, and electrostatic protection diodes Shunto Nishiura, Satoshi Tanaka, Takeshi Yoshida, Minoru Fujishima (Hiroshima Univ.) VLD2023-58 ICD2023-66 DC2023-65 RECONF2023-61 |
In recent years, research has been conducted to develop a communication device that can achieve high data rates of 100 G... [more] | VLD2023-58 ICD2023-66 DC2023-65 RECONF2023-61 pp.146-149 |
| WPT | 2023-11-10 14:50 |
Tokyo | Hachijomachi-Shokokai (Primary: On-site, Secondary: Online) |
[Invited Talk]
Sophomore Created Straight Radio Listens to Analog AM Wave Broadcast Takashi Ohira (TUT) WPT2023-29 |
Wireless power transfer systems are going to range from kHz to MHz and even GHz frequencies. Toward the effective develo... [more] | WPT2023-29 p.32 |
| SDM | 2023-10-13 17:00 |
Miyagi | Niche, Tohoku Univ. | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61 |
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] | SDM2023-61 pp.46-49 |
| RCS, IN, NV (Joint) |
2023-05-25 10:50 |
Kanagawa | Keio University (Hiyoshi Campus), and online (Primary: On-site, Secondary: Online) |
Performance Evaluation of Digital Self-Interference Cancellers for In-Band Full-Duplex Systems with High-Power Amplifiers Motoshi Tawada, Yuki Takagi, Yoshichika Ohta (SoftBank) RCS2023-16 |
In-band full-duplex communication (IBFD), which performs transmission and reception in the same frequency band at the sa... [more] | RCS2023-16 pp.13-17 |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| MW, ED | 2021-01-29 13:00 |
Online | Online | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| CAS, ICTSSL | 2021-01-29 12:50 |
Online | Online | A Study on the matching circuit using transformer Satoshi Tanaka (Murata) CAS2020-62 ICTSSL2020-47 |
An LC multi-stage matching circuit is widely used as a matching circuit for a power amplifier (PA) for mobile communicat... [more] | CAS2020-62 ICTSSL2020-47 pp.118-123 |
| LQE, CPM, ED | 2020-11-27 11:20 |
Online | Online | Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67 |
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] | ED2020-16 CPM2020-37 LQE2020-67 pp.60-62 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2019-01-29 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] | SDM2018-87 pp.27-30 |
| ED, SDM | 2018-02-28 11:55 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Effect of electrolyte on electrical characteristics of carbon nanotube biosensor Kana Hasegawa, Takuya Ushiyama, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2017-108 SDM2017-108 |
We have studied electrical characteristics of carbon nanotube thin film transistors in the electrolytic solution. In par... [more] | ED2017-108 SDM2017-108 pp.19-22 |
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| SDM | 2017-10-25 14:50 |
Miyagi | Niche, Tohoku Univ. | Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51 |
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] | SDM2017-51 pp.9-14 |
| ED | 2016-12-19 14:00 |
Miyagi | RIEC, Tohoku Univ | [Invited Talk]
Evaluation of transistor performance in single and double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well Amine El Moutaouakil, Hiroki Sugiyama, Hideaki Matsuzaki (NTT) ED2016-80 |
InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well have exhibited record high-speed performance... [more] | ED2016-80 pp.1-5 |
| SDM | 2016-06-29 16:20 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET Takamasa Kawanago, Shunri Oda (Tokyo Tech.) SDM2016-45 |
In this study, self-assembled-monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfi... [more] | SDM2016-45 pp.69-74 |
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