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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech)  SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2018-10-18 10:20 |
Miyagi | Niche, Tohoku Univ. | Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58 |
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] | SDM2018-58 pp.31-34 |
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| EID, SDM | 2015-12-14 13:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] | EID2015-15 SDM2015-98 pp.27-30 |
| EID, SDM | 2015-12-14 15:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103 |
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] | EID2015-20 SDM2015-103 pp.49-52 |
| SDM, EID | 2014-12-12 14:45 |
Kyoto | Kyoto University | Characteristics of Ga-Sn-Oxide thin film Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123 |
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] | EID2014-28 SDM2014-123 pp.79-82 |
| MRIS, ITE-MMS | 2013-07-12 13:50 |
Tokyo | Chuo Univ. | Surface Flatness Control of Ferromagnetic Alloy Thin Films with L10 Ordered Structure Akira Itabashi, Mitsuru Ohtake (Chuo Univ.), Fumiyoshi Kirino (Tokyo University of the Arts), Masaaki Futamoto (Chuo Univ.) MR2013-7 |
FePd, FePt, and CoPt alloy epitaxial thin films with L10 structure are prepared on (001) single-crystal substrates of Mg... [more] | MR2013-7 pp.7-12 |
| US | 2012-09-24 14:45 |
Akita | Tegata Campus, Akita Univ. | Fabrication of polarity-inverted ZnO films using ion bombardment to the substrate during an RF magnetron sputtering Ryo Ikoma (Doshisha Univ.), Takahiko Yanagitani (Nagoya Inst.Tech.), Shinji Takayanagi (Doshisha Univ.), Masashi Suzuki (Nagoya Inst.Tech.), Hiroyuki Odagawa (Kumamoto NCT), Mami Matsukawa (Doshisha Univ.) US2012-61 |
ZnO have been used as SAW devices and high frequency transducer owing to its high electromechanical coupling. In general... [more] | US2012-61 pp.21-25 |
| ED, SDM, CPM | 2012-05-18 14:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Preparation and evaluation of LiMn2O4 films prepared by sputtering method Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) ED2012-37 CPM2012-21 SDM2012-39 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. In this research, w... [more] | ED2012-37 CPM2012-21 SDM2012-39 pp.99-104 |
| ED, SDM, CPM | 2012-05-18 15:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Co-catalyitic effect on improving the photocatalytic properties of TiO2 films Masaaki Isai, Ikuta Nakamura, Yuuki Hieda, Fumiya Fukazawa (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytech.Univ.) ED2012-38 CPM2012-22 SDM2012-40 |
Abstract TiO2 films were prepared with RF magnetron sputtering method. The copper (cu) and iron (Fe) films were deposit... [more] | ED2012-38 CPM2012-22 SDM2012-40 pp.105-109 |
| CPM | 2011-10-26 13:50 |
Fukui | Fukui Univ. | Properties of AZO Thin Films Deposited at Room Temperature by the RF-DC Coupled Magnetron Sputtering Method Jun Kashiide, Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2011-111 |
In order to examine that influence of low voltage sputtering method on properties of AZO thin films, deposition of AZO t... [more] | CPM2011-111 pp.11-15 |
| CPM | 2011-08-11 09:25 |
Aomori | Preparation of Transparent Conducting AZO Thin Films by RF Magnetron Sputtering Takeshi Umehara, Satoru Noge (Numazu NCT) CPM2011-67 |
In this study, the results of the study of thin film deposition conditions of AZO thin film by RF magnetron sputtering m... [more] | CPM2011-67 pp.55-60 |
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| EMD, CPM, OME | 2011-06-30 16:55 |
Tokyo | Properties of AZO Thin Films Deposited at Room temperature by Low Voltage Sputtering Method Jun Kashiide, Katsuhito Nagoshi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) EMD2011-18 CPM2011-54 OME2011-32 |
In order to examine that effect of high energy particles and fabricated conditions of targets, such as sintering tempera... [more] | EMD2011-18 CPM2011-54 OME2011-32 pp.59-63 |
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| CPM, SDM, ED | 2011-05-20 13:50 |
Aichi | Nagoya Univ. (VBL) | Stabilized Pt deposition on the TiO2 films and their photocatalytic properties Ikuta Nakamura, Takanori Sato, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo polytech.Univ.) ED2011-28 CPM2011-35 SDM2011-41 |
TiO2 films were prepared with RF magnetron sputtering method. The platinum (Pt) films were deposited on the TiO2 films. ... [more] | ED2011-28 CPM2011-35 SDM2011-41 pp.139-143 |
| CPM, SDM, ED | 2011-05-20 14:15 |
Aichi | Nagoya Univ. (VBL) | Preparation and evaluation of LiMn2O4 films prepared by sputtering method Mitsuhiro Nakamura, Akio Niwa, Masaaki Isai (Shizuoka Univ.) ED2011-29 CPM2011-36 SDM2011-42 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. In this research, w... [more] | ED2011-29 CPM2011-36 SDM2011-42 pp.145-149 |
| ITE-MMS, MRIS | 2010-12-10 10:15 |
Ehime | Ehime Univ. | Crystal Structures and Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering Yuya Wada, Hirokazu Ikeya, Yutaka Takahashi, Nobuyuki Inaba (Yamagata Univ.), Fumiyoshi Kirino (Tokyo National University of Fine Arts and Music), Mitsuru Ohtake, Masaaki Futamoto (Chuo Univ.) MR2010-50 |
Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffracti... [more] | MR2010-50 pp.59-63 |
| US | 2010-09-30 10:50 |
Miyagi | Tohoku Univ. | c-axis parallel oriented ZnO film depositions by RF bias sputtering
-- The effect of bias frequency on the orientation -- Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Nagoya Inst. Tech.), Mami Matsukawa, Yoshiaki Watanabe (Doshisha Univ.) US2010-62 |
ZnO films where the crystallite c-axis is unidirectionally-aligned and parallel to the substrate plane [(11-20) or (10-2... [more] | US2010-62 pp.75-80 |
| US | 2010-09-30 11:40 |
Miyagi | Tohoku Univ. | Fabrication of Film Bulk Acoustic Resonator Using Structure of Ta2O5 Thin Film/Si Substrate Akinori Tsuchiya, Shoji Kakio (Yamanashi Univ.), Yasuhiko Nakagawa (Prof. Emeritus, Yamanashi Univ.) US2010-64 |
Highly X-axis-oriented tantalum pentoxide (Ta2O5) piezoelectric thin films were deposited using an RF-magnetron sputteri... [more] | US2010-64 pp.87-92 |
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