IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 54  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
QIT
(2nd)
2023-12-17
17:30
Okinawa OIST
(Primary: On-site, Secondary: Online)
[Poster Presentation] Optimal POVM with minimal size in two-parameter qubit-state estimation
Jianchao Zhang, Jun Suzuki (UEC)
In the realm of qubit state tomography, the accurate estimation of quantum states parameterized across the complete Bloc... [more]
LQE, ED, CPM 2023-12-01
09:55
Shizuoka   Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate
Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] ED2023-25 CPM2023-67 LQE2023-65
pp.52-55
LQE, ED, CPM 2023-12-01
10:20
Shizuoka   Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials
Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] ED2023-26 CPM2023-68 LQE2023-66
pp.56-59
QIT
(2nd)
2023-05-29
15:15
Kyoto Katsura Campus, Kyoto University Exponentially tighter cost bound of quantum error mitigation in scrambling quantum circuits
Kento Tsubouchi, Takahiro Sagawa, Nobuyuki Yoshioka (UTokyo)
In this work, we provide a unified way to analyze the sample complexity of various quantum error mitigation methods usin... [more]
QIT
(2nd)
2022-12-08
14:00
Kanagawa Keio Univ.
(Primary: On-site, Secondary: Online)
[Poster Presentation] Effect of entanglement on the trainability of over-parametrized quantum circuits
Wolfgang Glaeser, Naoki Yamamoto (Keio Univ.)
In this work, the effect of entanglement on the performance and trainability of parametrized quantum circuits (PQC) was ... [more]
ED, CPM, LQE 2021-11-25
15:00
Online Online Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells
Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT) ED2021-23 CPM2021-57 LQE2021-35
InGaN quantum-well (QW) light-emitting devices can cover the entire visible spectrum in principle, by changing the In co... [more] ED2021-23 CPM2021-57 LQE2021-35
pp.41-44
QIT
(2nd)
2021-05-25
09:30
Online Online Acceleration of Extreme Learning Machines by Dequantization of Quantum Singular Value Decomposition
Iori Takeda, Souichi Takahira, Kousuke Mitarai, Keisuke Fujii (Osaka Univ.)
In 2016, the quantum recommendation system was proposed by Kerenidis and Prakash, and it was shown that the singular val... [more]
QIT
(2nd)
2020-12-10
17:10
Online Online Quantum Algorithm for Finding the Optimal Variable Ordering for Binary Decision Diagrams
Seiichiro Tani (NTT)
An ordered binary decision diagram (OBDD) is a directed acyclic graph that represents a Boolean function.
Since OBDDs h... [more]

ED, THz [detail] 2019-12-23
16:45
Miyagi   GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] ED2019-83
pp.29-32
QIT
(2nd)
2018-06-04
13:20
Hiroshima ICCH Ran [Poster Presentation] Study on quantum entanglement in the Minkowski vacuum of field
Kazushige Ueda (Hiroshima Univ.), Atsushi Higuchi (York Univ), Satoshi Iso (KEK), Kazuhiro Yamamoto, Rumi Tatsukawa (Hiroshima Univ.)
It is well known that the Minkowski vacuum is expressed as an entangled state between the states constructed on the left... [more]
CPM, LQE, ED 2016-12-13
08:40
Kyoto Kyoto University Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83
In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantu... [more] ED2016-67 CPM2016-100 LQE2016-83
pp.51-54
OPE 2016-12-09
13:25
Okinawa   Proposal of Multimode Interference-Type Electroabsorption Optical Modulator with High Extinction Ratio
Daisuke Okitsu, Yu Yamano (Yokohama National Univ.), Joo-Hyong Noh (kaonto Gakuin Univ.), Taro Arakawa (Yokohama National Univ.) OPE2016-113
An electroabsorption modulator with a 1×1 multimode interference waveguide (MMI-EAM) is proposed. A partial EA region is... [more] OPE2016-113
pp.51-56
LQE, OPE, OCS 2016-10-27
16:35
Miyazaki Miyazaki Citizen's Plaza Theoretical investigation of highly efficient connecting structure between Ge-rib and GeSn waveguides and extinction characteristics of GeSn/SiGeSn multiple-quantum-well waveguide for mid-infrared photonics
Minami Akie, Takanori Sato, Shuntaro Makino (Hokkaido Univ.), Masakazu Arai (Miyazaki Univ.), Takeshi Fujisawa, Kunimasa Saitoh (Hokkaido Univ.) OCS2016-44 OPE2016-85 LQE2016-60
We investigate efficient connecting structure between Ge-rib and GeSn waveguides on Si substrate for mid-infrared (2 μm)... [more] OCS2016-44 OPE2016-85 LQE2016-60
pp.55-60
ED 2014-12-23
11:10
Miyagi   Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz
Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2014-111
Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and... [more] ED2014-111
pp.75-78
LQE, ED, CPM 2014-11-28
09:30
Osaka   Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure
Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] ED2014-85 CPM2014-142 LQE2014-113
pp.59-62
ICSS, ISEC, SITE, EMM, IPSJ-CSEC, IPSJ-SPT [detail] 2014-07-04
10:40
Hokkaido San-Refure Hakodate Cryptanalysis of a matrix variant of NTRU
Takanori Yasuda (ISIT), Yuya Yamaguchi (Kyushu Univ.), Xavier Dahan, Kouichi Sakurai (ISIT) ISEC2014-33 SITE2014-28 ICSS2014-37 EMM2014-33
Since its introduction in 1996, the cryptosystem NTRU has become a well-established candidate for the next generation pu... [more] ISEC2014-33 SITE2014-28 ICSS2014-37 EMM2014-33
pp.239-246
ED, SDM 2014-02-28
09:00
Hokkaido Hokkaido Univ. Centennial Hall Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE -- Analysis of Nitride Quantum Well Structures --
Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] ED2013-142 SDM2013-157
pp.55-59
CPM, LQE, ED 2013-11-29
09:30
Osaka   OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] ED2013-77 CPM2013-136 LQE2013-112
pp.63-66
OPE, LQE, CPM, EMD, R 2013-08-30
14:45
Hokkaido sun-refre Hakodate Potential-Tailored Strained InGaAs Quantum Well for Polarization-Independent 2×2 Optical Switch
Hiroki Tominaga, Joo-Hyong Noh, Taro Arakawa (Yokohama National Univ.) R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is one of the potential-tailored quantum well struct... [more] R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57
pp.147-152
ITE-IDY, EID, IEE-EDD 2013-01-24
15:16
Shizuoka Shizuoka Univ. Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence
Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) EID2012-21
We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quant... [more] EID2012-21
pp.49-52
 Results 1 - 20 of 54  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan