Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
QIT (2nd) |
2023-12-17 17:30 |
Okinawa |
OIST (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Optimal POVM with minimal size in two-parameter qubit-state estimation Jianchao Zhang, Jun Suzuki (UEC) |
In the realm of qubit state tomography, the accurate estimation of quantum states parameterized across the complete Bloc... [more] |
|
LQE, ED, CPM |
2023-12-01 09:55 |
Shizuoka |
|
Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65 |
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] |
ED2023-25 CPM2023-67 LQE2023-65 pp.52-55 |
LQE, ED, CPM |
2023-12-01 10:20 |
Shizuoka |
|
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] |
ED2023-26 CPM2023-68 LQE2023-66 pp.56-59 |
QIT (2nd) |
2023-05-29 15:15 |
Kyoto |
Katsura Campus, Kyoto University |
Exponentially tighter cost bound of quantum error mitigation in scrambling quantum circuits Kento Tsubouchi, Takahiro Sagawa, Nobuyuki Yoshioka (UTokyo) |
In this work, we provide a unified way to analyze the sample complexity of various quantum error mitigation methods usin... [more] |
|
QIT (2nd) |
2022-12-08 14:00 |
Kanagawa |
Keio Univ. (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Effect of entanglement on the trainability of over-parametrized quantum circuits Wolfgang Glaeser, Naoki Yamamoto (Keio Univ.) |
In this work, the effect of entanglement on the performance and trainability of parametrized quantum circuits (PQC) was ... [more] |
|
ED, CPM, LQE |
2021-11-25 15:00 |
Online |
Online |
Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi (KIT) ED2021-23 CPM2021-57 LQE2021-35 |
InGaN quantum-well (QW) light-emitting devices can cover the entire visible spectrum in principle, by changing the In co... [more] |
ED2021-23 CPM2021-57 LQE2021-35 pp.41-44 |
QIT (2nd) |
2021-05-25 09:30 |
Online |
Online |
Acceleration of Extreme Learning Machines by Dequantization of Quantum Singular Value Decomposition Iori Takeda, Souichi Takahira, Kousuke Mitarai, Keisuke Fujii (Osaka Univ.) |
In 2016, the quantum recommendation system was proposed by Kerenidis and Prakash, and it was shown that the singular val... [more] |
|
QIT (2nd) |
2020-12-10 17:10 |
Online |
Online |
Quantum Algorithm for Finding the Optimal Variable Ordering for Binary Decision Diagrams Seiichiro Tani (NTT) |
An ordered binary decision diagram (OBDD) is a directed acyclic graph that represents a Boolean function.
Since OBDDs h... [more] |
|
ED, THz [detail] |
2019-12-23 16:45 |
Miyagi |
|
GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] |
ED2019-83 pp.29-32 |
QIT (2nd) |
2018-06-04 13:20 |
Hiroshima |
ICCH Ran |
[Poster Presentation]
Study on quantum entanglement in the Minkowski vacuum of field Kazushige Ueda (Hiroshima Univ.), Atsushi Higuchi (York Univ), Satoshi Iso (KEK), Kazuhiro Yamamoto, Rumi Tatsukawa (Hiroshima Univ.) |
It is well known that the Minkowski vacuum is expressed as an entangled state between the states constructed on the left... [more] |
|
CPM, LQE, ED |
2016-12-13 08:40 |
Kyoto |
Kyoto University |
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83 |
In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantu... [more] |
ED2016-67 CPM2016-100 LQE2016-83 pp.51-54 |
OPE |
2016-12-09 13:25 |
Okinawa |
|
Proposal of Multimode Interference-Type Electroabsorption Optical Modulator with High Extinction Ratio Daisuke Okitsu, Yu Yamano (Yokohama National Univ.), Joo-Hyong Noh (kaonto Gakuin Univ.), Taro Arakawa (Yokohama National Univ.) OPE2016-113 |
An electroabsorption modulator with a 1×1 multimode interference waveguide (MMI-EAM) is proposed. A partial EA region is... [more] |
OPE2016-113 pp.51-56 |
LQE, OPE, OCS |
2016-10-27 16:35 |
Miyazaki |
Miyazaki Citizen's Plaza |
Theoretical investigation of highly efficient connecting structure between Ge-rib and GeSn waveguides and extinction characteristics of GeSn/SiGeSn multiple-quantum-well waveguide for mid-infrared photonics Minami Akie, Takanori Sato, Shuntaro Makino (Hokkaido Univ.), Masakazu Arai (Miyazaki Univ.), Takeshi Fujisawa, Kunimasa Saitoh (Hokkaido Univ.) OCS2016-44 OPE2016-85 LQE2016-60 |
We investigate efficient connecting structure between Ge-rib and GeSn waveguides on Si substrate for mid-infrared (2 μm)... [more] |
OCS2016-44 OPE2016-85 LQE2016-60 pp.55-60 |
ED |
2014-12-23 11:10 |
Miyagi |
|
Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2014-111 |
Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and... [more] |
ED2014-111 pp.75-78 |
LQE, ED, CPM |
2014-11-28 09:30 |
Osaka |
|
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] |
ED2014-85 CPM2014-142 LQE2014-113 pp.59-62 |
ICSS, ISEC, SITE, EMM, IPSJ-CSEC, IPSJ-SPT [detail] |
2014-07-04 10:40 |
Hokkaido |
San-Refure Hakodate |
Cryptanalysis of a matrix variant of NTRU Takanori Yasuda (ISIT), Yuya Yamaguchi (Kyushu Univ.), Xavier Dahan, Kouichi Sakurai (ISIT) ISEC2014-33 SITE2014-28 ICSS2014-37 EMM2014-33 |
Since its introduction in 1996, the cryptosystem NTRU has become a well-established candidate for the next generation pu... [more] |
ISEC2014-33 SITE2014-28 ICSS2014-37 EMM2014-33 pp.239-246 |
ED, SDM |
2014-02-28 09:00 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE
-- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157 |
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] |
ED2013-142 SDM2013-157 pp.55-59 |
CPM, LQE, ED |
2013-11-29 09:30 |
Osaka |
|
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112 |
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] |
ED2013-77 CPM2013-136 LQE2013-112 pp.63-66 |
OPE, LQE, CPM, EMD, R |
2013-08-30 14:45 |
Hokkaido |
sun-refre Hakodate |
Potential-Tailored Strained InGaAs Quantum Well for Polarization-Independent 2×2 Optical Switch Hiroki Tominaga, Joo-Hyong Noh, Taro Arakawa (Yokohama National Univ.) R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57 |
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is one of the potential-tailored quantum well struct... [more] |
R2013-58 EMD2013-64 CPM2013-83 OPE2013-87 LQE2013-57 pp.147-152 |
ITE-IDY, EID, IEE-EDD |
2013-01-24 15:16 |
Shizuoka |
Shizuoka Univ. |
Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) EID2012-21 |
We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quant... [more] |
EID2012-21 pp.49-52 |