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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE, OME, CPM 2022-12-09
11:20
Tokyo
(Primary: On-site, Secondary: Online)
Investigation for one-chip high functionality gate driver IC
Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] EE2022-22 CPM2022-77 OME2022-35
pp.18-23
ICD, SDM, ITE-IST [detail] 2022-08-08
14:40
Online   Sub-50-mV Input Voltage Boost Converter for Extremely Low-Voltage Thermal Energy Harvesting
Hikaru Sebe, Daisuke Kanemoto, Tetsuya Hirose (Osaka Univ.) SDM2022-39 ICD2022-7
We propose a voltage boost converter for sub-50-mV thermal energy harvesting. The proposed converter consists of charge ... [more] SDM2022-39 ICD2022-7
pp.21-26
EE, IEE-SPC
(Joint)
2019-03-07
15:20
Okinawa   Efficiency Improvement of Bi-directional Inductive Power Transfer System by Adjusting The Length of Dead Time
Ryosuke Ota, Nobukazu Hoshi (TUS) EE2018-60
There is a case that snubber capacitors are connected in parallel to switching devices for applying soft switching techn... [more] EE2018-60
pp.13-18
ICD, CPSY, CAS 2018-12-23
15:30
Okinawa   Design of A 2.5kV Isolation 400Mbps Transformer-based Digital Isolator with High EMI Immunity for Power Electronics Environment
Tsukasa Kagaya, Koutarou Miyazaki, Makoto Takamiya, Takayasu Sakurai (Tokyo Univ.) CAS2018-113 ICD2018-97 CPSY2018-79
This paper introduces high-speed digital isolator for the harsh power electronics environments. In power electronics sys... [more] CAS2018-113 ICD2018-97 CPSY2018-79
pp.141-146
MW 2018-12-13
15:45
Kanagawa Kanagawa Univ. Implementation of quadrature-modulation Transmitter for Generating Bi-level EPWM Signal
Mizuki Kinoshita, Umeda Yohtaro (Tokyo Univ. of Science) MW2018-124
We report a class D power amplifier designed for use at 500 MHz. The power amplifier is fabricated as an integrated circ... [more] MW2018-124
pp.61-65
MW 2015-12-17
10:00
Tokyo Tokyo Univ. of Science GaN Voltage-Mode Class D Power Amplifier Using Bootstrap Driver
Hideyuki Nakamizo, Kenji Mukai, Shintaro Shinjo (Mitsubishi Electric Corporation), Peter Asbeck (UCSD) MW2015-133
We report a GaN Voltage-Mode Class D power amplifier designed for use at 465 MHz of LTE Band 31. The amplifier is fabric... [more] MW2015-133
pp.1-5
ICD, CPSY 2015-12-18
10:50
Kyoto Kyoto Institute of Technology [Invited Talk] GaN Power Switching Devices and its Integrated Circuits
Shuichi Nagai (Panasonic) ICD2015-86 CPSY2015-99
A GaN power semiconductor device attacks great attention due to its high-speed and low loss operation under high tempera... [more] ICD2015-86 CPSY2015-99
pp.83-85
VLD 2015-03-04
09:40
Okinawa Okinawa Seinen Kaikan Ground Bounce Suppressive Effect using Power Switch Driver to control Power Switch Rise Time
Tetsutaro Ohnishi, Kimiyoshi Usami (S.I.T.) VLD2014-176
While Power Gating technology enables us to reduce leakage current, it causes a serious problem of occurring Ground Boun... [more] VLD2014-176
pp.129-134
MW 2014-03-05
13:55
Ehime Ehime University Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals
Teruyuki Shimura, Kazuya Yamamoto, Hiroaki Seki, Morishige Hieda, Yoshihito Hirano (Mitsubishi Electric) MW2013-218
Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The ... [more] MW2013-218
pp.123-128
ICD, SDM 2012-08-03
10:05
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
ICD, SDM 2012-08-03
10:55
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems
Hiroshi Koizumi, Minoru Togashi, Masafumi Nogawa, Yusuke Ohtomo (NTT) SDM2012-80 ICD2012-48
A burst-mode laser diode driver for 10G-EPON with a burst-by-burst power-saving function reduces power consumption by 93... [more] SDM2012-80 ICD2012-48
pp.93-98
VLD 2012-03-07
15:15
Oita B-con Plaza Power-Switch Drive-circuit generation for Ground-Bounce reduction using the Genetic-Programming
Makoto Miyauchi, Masaru Kudo, Yuya Ohta, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2011-142
Ground Bounce noise is a serious problem Power Gating technology. In this research, as compared with the Daisy Chain whi... [more] VLD2011-142
pp.133-138
EMD 2008-11-15
11:00
Miyagi Tohoku Bunka Gakuin University (Sendai) Improvement in parameters of older construction power contactors by modernization of their drivers
Piotr Borkowski, Grzegorz Drygala (Tech. Univ. of Lodz) EMD2008-70
In practice there are cases when electrical apparatuses available on the market do not fully comply with requirements st... [more] EMD2008-70
pp.21-24
RCS, MoNA, WBS, SR, MW
(Joint)
2007-03-09
13:00
Kanagawa YRP [Invited Talk] Circuit design of highly linear and efficient power amplifiers for WCDMA applications -- Dynamic predistortion and polar modulation technologies --
Kazuaki Kunihiro, Shingo Yamanouchi, Kiyohiko Takahashi, Yuuichi Aoki (NEC)
This paper presents linearization and efficiency-enhancement techniques, i.e., dynamic predistortion (PD) and polar modu... [more] MW2006-193
pp.1-6
ICD 2006-04-14
13:00
Oita Oita University [Special Invited Talk] Low-Power Low-Voltage SRAM Design for Battery Operation
Masanao Yamaoka (Hitachi, Ltd.)
In the processors for mobile devices, the power consumption
of the embedded SRAMs has large impact on the total power c... [more]
ICD2006-17
pp.91-96
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