Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EE, OME, CPM |
2022-12-09 11:20 |
Tokyo |
(Primary: On-site, Secondary: Online) |
Investigation for one-chip high functionality gate driver IC Yusuke Ogushi, Satoshi Matsumoto (KIT) EE2022-22 CPM2022-77 OME2022-35 |
GaN power devices have caught the attentions for high frequency switching and high efficiency of power supply. Our goal ... [more] |
EE2022-22 CPM2022-77 OME2022-35 pp.18-23 |
ICD, SDM, ITE-IST [detail] |
2022-08-08 14:40 |
Online |
|
Sub-50-mV Input Voltage Boost Converter for Extremely Low-Voltage Thermal Energy Harvesting Hikaru Sebe, Daisuke Kanemoto, Tetsuya Hirose (Osaka Univ.) SDM2022-39 ICD2022-7 |
We propose a voltage boost converter for sub-50-mV thermal energy harvesting. The proposed converter consists of charge ... [more] |
SDM2022-39 ICD2022-7 pp.21-26 |
EE, IEE-SPC (Joint) |
2019-03-07 15:20 |
Okinawa |
|
Efficiency Improvement of Bi-directional Inductive Power Transfer System by Adjusting The Length of Dead Time Ryosuke Ota, Nobukazu Hoshi (TUS) EE2018-60 |
There is a case that snubber capacitors are connected in parallel to switching devices for applying soft switching techn... [more] |
EE2018-60 pp.13-18 |
ICD, CPSY, CAS |
2018-12-23 15:30 |
Okinawa |
|
Design of A 2.5kV Isolation 400Mbps Transformer-based Digital Isolator with High EMI Immunity for Power Electronics Environment Tsukasa Kagaya, Koutarou Miyazaki, Makoto Takamiya, Takayasu Sakurai (Tokyo Univ.) CAS2018-113 ICD2018-97 CPSY2018-79 |
This paper introduces high-speed digital isolator for the harsh power electronics environments. In power electronics sys... [more] |
CAS2018-113 ICD2018-97 CPSY2018-79 pp.141-146 |
MW |
2018-12-13 15:45 |
Kanagawa |
Kanagawa Univ. |
Implementation of quadrature-modulation Transmitter for Generating Bi-level EPWM Signal Mizuki Kinoshita, Umeda Yohtaro (Tokyo Univ. of Science) MW2018-124 |
We report a class D power amplifier designed for use at 500 MHz. The power amplifier is fabricated as an integrated circ... [more] |
MW2018-124 pp.61-65 |
MW |
2015-12-17 10:00 |
Tokyo |
Tokyo Univ. of Science |
GaN Voltage-Mode Class D Power Amplifier Using Bootstrap Driver Hideyuki Nakamizo, Kenji Mukai, Shintaro Shinjo (Mitsubishi Electric Corporation), Peter Asbeck (UCSD) MW2015-133 |
We report a GaN Voltage-Mode Class D power amplifier designed for use at 465 MHz of LTE Band 31. The amplifier is fabric... [more] |
MW2015-133 pp.1-5 |
ICD, CPSY |
2015-12-18 10:50 |
Kyoto |
Kyoto Institute of Technology |
[Invited Talk]
GaN Power Switching Devices and its Integrated Circuits Shuichi Nagai (Panasonic) ICD2015-86 CPSY2015-99 |
A GaN power semiconductor device attacks great attention due to its high-speed and low loss operation under high tempera... [more] |
ICD2015-86 CPSY2015-99 pp.83-85 |
VLD |
2015-03-04 09:40 |
Okinawa |
Okinawa Seinen Kaikan |
Ground Bounce Suppressive Effect using Power Switch Driver to control Power Switch Rise Time Tetsutaro Ohnishi, Kimiyoshi Usami (S.I.T.) VLD2014-176 |
While Power Gating technology enables us to reduce leakage current, it causes a serious problem of occurring Ground Boun... [more] |
VLD2014-176 pp.129-134 |
MW |
2014-03-05 13:55 |
Ehime |
Ehime University |
Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals Teruyuki Shimura, Kazuya Yamamoto, Hiroaki Seki, Morishige Hieda, Yoshihito Hirano (Mitsubishi Electric) MW2013-218 |
Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The ... [more] |
MW2013-218 pp.123-128 |
ICD, SDM |
2012-08-03 10:05 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47 |
We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] |
SDM2012-79 ICD2012-47 pp.89-92 |
ICD, SDM |
2012-08-03 10:55 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
A Burst-Mode Laser Diode Driver with Burst-by-Burst Power Saving for 10G-EPON Systems Hiroshi Koizumi, Minoru Togashi, Masafumi Nogawa, Yusuke Ohtomo (NTT) SDM2012-80 ICD2012-48 |
A burst-mode laser diode driver for 10G-EPON with a burst-by-burst power-saving function reduces power consumption by 93... [more] |
SDM2012-80 ICD2012-48 pp.93-98 |
VLD |
2012-03-07 15:15 |
Oita |
B-con Plaza |
Power-Switch Drive-circuit generation for Ground-Bounce reduction using the Genetic-Programming Makoto Miyauchi, Masaru Kudo, Yuya Ohta, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2011-142 |
Ground Bounce noise is a serious problem Power Gating technology. In this research, as compared with the Daisy Chain whi... [more] |
VLD2011-142 pp.133-138 |
EMD |
2008-11-15 11:00 |
Miyagi |
Tohoku Bunka Gakuin University (Sendai) |
Improvement in parameters of older construction power contactors by modernization of their drivers Piotr Borkowski, Grzegorz Drygala (Tech. Univ. of Lodz) EMD2008-70 |
In practice there are cases when electrical apparatuses available on the market do not fully comply with requirements st... [more] |
EMD2008-70 pp.21-24 |
RCS, MoNA, WBS, SR, MW (Joint) |
2007-03-09 13:00 |
Kanagawa |
YRP |
[Invited Talk]
Circuit design of highly linear and efficient power amplifiers for WCDMA applications
-- Dynamic predistortion and polar modulation technologies -- Kazuaki Kunihiro, Shingo Yamanouchi, Kiyohiko Takahashi, Yuuichi Aoki (NEC) |
This paper presents linearization and efficiency-enhancement techniques, i.e., dynamic predistortion (PD) and polar modu... [more] |
MW2006-193 pp.1-6 |
ICD |
2006-04-14 13:00 |
Oita |
Oita University |
[Special Invited Talk]
Low-Power Low-Voltage SRAM Design for Battery Operation Masanao Yamaoka (Hitachi, Ltd.) |
In the processors for mobile devices, the power consumption
of the embedded SRAMs has large impact on the total power c... [more] |
ICD2006-17 pp.91-96 |