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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, LQE | 2021-11-25 13:55 |
Online | Online | Waveguide loss measurements in III-nitride laser structures Kenta Ogasawara (KIT), Shigeta Sakai, Tadashi Okumura, Koichi Naniwae (Ushio Inc), Atsushi A. Yamaguchi (KIT)  ED2021-21 CPM2021-55 LQE2021-33 |
InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing th... [more] | ED2021-21 CPM2021-55 LQE2021-33 pp.33-36 |
| NLP, MSS (Joint) |
2021-03-15 09:15 |
Online | Online | On descriptions of state variables in the vicinity of bifurcation points via Langevin system Yasuhiro Nariyuki (Univ. Toyama) NLP2020-55 |
One-dimensional Langevin systems are discussed as a reduced (truncation) model of a stochastic mechanical system with ne... [more] | NLP2020-55 pp.1-4 |
| CPM, LQE, ED | 2019-11-22 14:00 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99 |
InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since ... [more] | ED2019-56 CPM2019-75 LQE2019-99 pp.97-100 |
| SDM | 2019-11-08 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II
-- Random Dopants under Semiconductor Nano-structures -- Nobuyuki Sano (Univ. Tsukuba) SDM2019-75 |
Theoretical modeling of discrete impurities under the framework of device simulations plays a crucial role in analyzing ... [more] | SDM2019-75 pp.33-38 |
| MBE, NC | 2019-10-11 14:00 |
Miyagi | Effect of irregular stimulus presentation on periodic tapping Jun Misawa, Yasuhiro Tsubo (Ritsumeikan Univ.) MBE2019-29 NC2019-20 |
We humans are capable to process various sensory information flexibly and perform motor actions based on the information... [more] | MBE2019-29 NC2019-20 pp.1-5 |
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| ED, LQE, CPM | 2018-11-30 13:05 |
Aichi | Nagoya Inst. tech. | Theoretical and Experimental Studies on Potential Fluctuation in InGaN Quantum-Well Structures Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-48 CPM2018-82 LQE2018-102 |
The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the composition... [more] | ED2018-48 CPM2018-82 LQE2018-102 pp.75-78 |
| ED, LQE, CPM | 2018-11-30 13:30 |
Aichi | Nagoya Inst. tech. | A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103 |
It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential... [more] | ED2018-49 CPM2018-83 LQE2018-103 pp.79-82 |
| NLP | 2018-04-26 10:20 |
Kumamoto | Kumaoto Univ. | A Probabilistic Lattice Model of a Three-Port Quantum Wave Filter Shota Hayakawa, Hisato Fujisaka, Takeshi Kamio (Hiroshima City Univ.) NLP2018-1 |
Quantum potential systems, especially a system functioning as a three-port quantum wave filter, are modeled after lattic... [more] | NLP2018-1 pp.1-4 |
| SDM | 2017-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities
-- Random Dopant Fluctuations and Self-Averaging -- Nobuyuki Sano (Univ. Tsukuba) SDM2017-68 |
The classical and quantum effects associated with discrete impurities on transport characteristics and device modeling i... [more] | SDM2017-68 pp.37-42 |
| ED, LQE, CPM | 2012-11-30 11:25 |
Osaka | Osaka City University | Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109 |
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] | ED2012-81 CPM2012-138 LQE2012-109 pp.71-74 |
| NC | 2011-10-20 14:25 |
Fukuoka | Ohashi Campus, Kyushu Univ. | A Spiking Neuron Device Consisting of Nanodisk Array Structures and CMOS Circuits Haichao Liang, Takashi Morie, Yilai Sun (Kyutech), Makoto Igarashi, Seiji Samukawa (Tohoku Univ.) NC2011-66 |
We propose an integrate-and-fire type spiking neuron device consisting of CMOS circuits and nanodisk array structures fa... [more] | NC2011-66 pp.125-129 |
| NC, MBE (Joint) |
2011-03-08 09:55 |
Tokyo | Tamagawa University | Reciprocal Fluctuation in Sensory Evoked Potential for Dermal Electrical Stimulation and it's Modeling Tomoki Minoda, Ryoko Futami (Fukushima Univ.) MBE2010-115 |
It is known that character information can be transmitted using Morse code through dermal electrical stimulation by two ... [more] | MBE2010-115 pp.69-74 |
| HIP | 2007-06-28 - 2007-06-29 |
Hokkaido | The relation between working memory capacity and P3 components in visual 3-stimulus oddball task Yukio Tsuchida, Jun'ichi Katayama, Harumitsu Murohashi (Hokkaido Univ.) |
Event-related brain potential (ERP) is a voltage fluctuation in the electroencephalogram, time locked to exogenous or en... [more] | ||
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