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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-10-19
16:30		 Online Online [Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62		 Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] SDM2022-62
pp.34-37
R 2020-11-30
14:55		 Online Online Analysis for Degraded MLCC Using Voltage Contrast Method in SEM
Akira Saito (Murata) R2020-27		 To ensure the reliability of multi-layer ceramic capacitor (MLCC) while its miniaturization is accelerating, it is neces... [more] R2020-27
pp.21-24
ED, CPM, SDM 2015-05-29
09:30		 Aichi Venture Business Laboratory, Toyohashi University of Technology Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ
Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech) ED2015-29 CPM2015-14 SDM2015-31		 We investigated the oxygen permeability and the crystal structure of the SrFeO3-δ(δ= ～0.25)which possesses crystal aniso... [more] ED2015-29 CPM2015-14 SDM2015-31
pp.67-69
SDM 2010-11-11
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175		 Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
SDM 2007-06-08
10:30		 Hiroshima Hiroshima Univ. ( Faculty Club) The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift
Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42		 The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] SDM2007-42
pp.59-64
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