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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED, CPM | 2022-05-27 17:05 |
Online | Online | Characterization method of semiconductors under Ohmic-metals by using multi-probe Hall devices Kazuya Uryu (JAIST/ATL), Shota Kiuchi (JAIST), Taku Sato (ATL), Toshi-kazu Suzuki (JAIST)  ED2022-15 CPM2022-9 SDM2022-22 |
(To be available after the conference date) [more] | ED2022-15 CPM2022-9 SDM2022-22 pp.35-38 |
| MW, ED | 2019-01-17 15:00 |
Tokyo | Hitachi, Central Research Lab. | Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] | ED2018-77 MW2018-144 pp.51-54 |
| WPT (2nd) |
2018-11-02 - 2018-11-04 |
Miyagi | Tohoku University | An Efficiency of Impedance Matching Approach with Lossy Elements in Wireless Power Transfer System Satoshi Suzuki, Qiang Chen, Hiroyasu Sato (Tohoku Univ.) |
Impedance matching is one of the most important theory for Wireless Power Transfer(WPT). It is to realize complex conjug... [more] | |
| EE, WPT, IEE-SPC [detail] | 2017-07-27 10:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
6.78MHz-band rectifier with impedance matching circuit considering intrinsic ohmic loss Satoshi Suzuki (Tohoku Univ.), Shoto Ueda (Yokogawa Rental & Leese), Qiaowei Yuan (NIT, Sendai), Qiang Chen (Tohoku Univ.) EE2017-13 WPT2017-18 |
Nowadays, Wireless Power Transfer (WPT) becomes very popular. It is very important to make the efficiency of WPT system ... [more] | EE2017-13 WPT2017-18 pp.15-18 |
| CPM, ED, SDM | 2008-05-16 09:50 |
Aichi | Nagoya Institute of Technology | Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] | ED2008-11 CPM2008-19 SDM2008-31 pp.51-56 |
| ED, MW | 2006-01-19 13:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] | ED2005-203 MW2005-157 pp.23-27 |
| EMCJ, MW | 2005-10-28 13:45 |
Akita | Akita University | Analysis of varistors by using equivalent circuit Mahmudul Kabir, Masafumi Suzuki, Noboru Yoshimura (Akita Univ.) |
Recently, varistors are getting smaller day by day with the mobile electrical appliances. We have succeeded to make an e... [more] | EMCJ2005-100 MW2005-106 pp.43-46 |
| MW, ED | 2005-01-18 11:35 |
Tokyo | - Makoto Miyoshi (NIT/NGK Insulators), -, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.), -, Tomohiko Shibata, Mitsuhiro Tanaka, - (NGK) |
Al0.26Ga0.74N/AlN/GaN heterostructures were grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. The ver... [more] | ED2004-217 MW2004-224 pp.31-35 |
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