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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| HWS, VLD | 2023-03-03 13:25 |
Okinawa | (Primary: On-site, Secondary: Online) |
High-Performance and Programmer-Friendly Secure Non-Volatile Memory using Temporal Memory-Access Redirection Ryo Koike, Shinya Takamaeda (UTokyo)  VLD2022-106 HWS2022-77 |
Byte-addressable non-volatile memory (NVM) has two challenges, performance degradation due to high-latency integrity tre... [more] | VLD2022-106 HWS2022-77 pp.179-184 |
| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| CPSY, DC, IPSJ-ARC [detail] | 2021-07-20 14:00 |
Online | Online | Prototype Implementation of Non-Volatile Memory Support for RISC-V Keystone Enclave Lena Yu, Yu Omori, Keiji Kimura (Waseda Univ.) CPSY2021-2 DC2021-2 |
Handling confidential information has become an increasingly important concern among many areas of society. However, cur... [more] | CPSY2021-2 DC2021-2 pp.7-12 |
| ED, SDM, CPM | 2021-05-27 14:10 |
Online | Online | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) ED2021-3 CPM2021-3 SDM2021-14 |
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] | ED2021-3 CPM2021-3 SDM2021-14 pp.11-14 |
| CPM | 2021-03-03 13:45 |
Online | Online | Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] | CPM2020-69 pp.52-54 |
| DE, IPSJ-DBS | 2020-12-22 10:00 |
Online | Online | A Study of Execution Costs of Database Operations for Non-Volatile Memory Devices Hirotaka Yoshioka, Kazuo Goda, Masaru Kitsuregawa (Univ of Tokyo) DE2020-23 |
Non-Volatile memory (NVM) is an emerging technology, which has persistency properties similar to SSD and HDD, while prov... [more] | DE2020-23 pp.36-41 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2020-11-18 14:25 |
Online | Online | Energy Efficient Approximate Storing of Image Data for Non-volatile Memory Yoshinori Ono, Kimiyoshi Usami (SIT) VLD2020-38 ICD2020-58 DC2020-58 RECONF2020-57 |
A non-volatile memory (NVM) employing MTJ has a lot of strong points. However, it consumes a lot of energy when writing ... [more] | VLD2020-38 ICD2020-58 DC2020-58 RECONF2020-57 pp.145-150 |
| DE, IPSJ-DBS, IPSJ-IFAT | 2020-09-05 15:50 |
Online | Online | A Preliminary Study of Microbenchmarking for Performance Evaluation of Non-volatile Memory Devices Hirotaka Yoshioka, Kazuo Goda, Masaru Kitsuregawa (Univ. of Tokyo) DE2020-14 |
Non-Volatile memory (NVM) is an emerging technology, which has persistency properties similar to SSD and HDD, while prov... [more] | DE2020-14 pp.7-12 |
| CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] | 2020-02-27 16:05 |
Kagoshima | Yoron-cho Chuou-Kouminkan | NDCKPT: Transparent Checkpointing on NVDIMM with Operating System Support Hikaru Nishida, Keiji Kimura (Waseda Univ.) CPSY2019-102 DC2019-108 |
Checkpointing is a technique to give a fault tolerance to applications. Some research proposed ways to checkpoint arbitr... [more] | CPSY2019-102 DC2019-108 pp.87-92 |
| SDM | 2020-01-28 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Future of Non-Volatile Memory - From Storage to Computing Kazunari Ishimaru (kioxia) SDM2019-87 |
More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expande... [more] | SDM2019-87 p.19 |
| PN | 2019-11-15 11:05 |
Kanagawa | [Invited Talk]
Emerging Studies in Computer Memory Systems Takahiro Hirofuchi (AIST) PN2019-28 |
This paper presents emerging studies in computer memory systems. The advent of new non-volatile memory devices, such as ... [more] | PN2019-28 pp.29-35 |
|
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-15 13:00 |
Ehime | Ehime Prefecture Gender Equality Center | [Keynote Address]
Technology Trends of Persistent Memory Satoshi Imamura (FLL) VLD2019-48 ICD2019-37 IE2019-43 CPSY2019-47 DC2019-72 RECONF2019-43 |
As the amount of data handled by applications increases every year, the demand for the larger capacity of main memory ha... [more] | VLD2019-48 ICD2019-37 IE2019-43 CPSY2019-47 DC2019-72 RECONF2019-43 p.175(VLD), p.43(ICD), p.43(IE), p.55(CPSY), p.175(DC), p.33(RECONF) |
| MRIS, ITE-MMS | 2018-12-06 15:30 |
Ehime | Ehime University | Simulation analysis of the write error rate of voltage-torque MRAM Hiroshi Imamura (AIST) MRIS2018-23 |
Voltage torque MRAM, where the information is written by using the voltage control of the magntic anisotropy, has attrac... [more] | MRIS2018-23 pp.19-23 |
| EMD, LQE, OPE, CPM, R | 2018-08-23 15:55 |
Hokkaido | Otaru Camber of Commerce & Industry | [Invited Talk]
Highly reliable memory system realizing long-term preservation of digital data
-- The background, issues and the prospects -- Toshio Kobayashi (SIT) R2018-23 EMD2018-26 CPM2018-26 OPE2018-53 LQE2018-42 |
Digital technology based on semiconductor technology has become indispensable technology for personal living and social ... [more] | R2018-23 EMD2018-26 CPM2018-26 OPE2018-53 LQE2018-42 pp.31-36 |
| ICD | 2018-04-20 11:10 |
Tokyo | [Invited Talk]
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC) ICD2018-10 |
A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] | ICD2018-10 pp.39-44 |
|
| SDM | 2017-11-10 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges Risho Koh, Mitsuru Miyamori, Katsumi Tsuneno, Tetsuya Muta, Yoshiyuki Kawashima (Renesas electronics) SDM2017-71 |
A SPICE-compatible model which reproduces the read current of split-gate MONOS (SG-MONOS) non-volatile memory cell has b... [more] | SDM2017-71 pp.53-58 |
| SDM, ICD, ITE-IST [detail] | 2017-08-01 09:45 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Parallel Programming of Non-volatile Power-up States of SRAM Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-38 ICD2017-26 |
A technique for using an ordinary SRAM array for programmable and readable non-volatile (NV) memory is proposed. Paralle... [more] | SDM2017-38 ICD2017-26 pp.49-54 |
| ICD | 2017-04-20 16:10 |
Tokyo | [Invited Talk]
A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology Ryuji Yamashita, Sagar Magia (WDC), Tsutomu Higuchi, Kazuhide Yoneya, Toshio Yamamura (Toshiba), Hiroyuki Mizukoshi, Shingo Zaitsu, Minoru Yamashita, Shunichi Toyama, Norihiro Kamae, Juan Lee, Shuo Chen, Jiawei Tao, William Mak, Xiaohua Zhang (WDC) ICD2017-9 |
A 512Gb 3b/cell flash has been developed on a 64-WL-layer BiCS technology. By using a four-block-EOC row decoding approa... [more] | ICD2017-9 pp.45-50 |
|
| SDM | 2017-02-06 13:00 |
Tokyo | Tokyo Univ. | [Invited Talk]
Huge-potential need to the memory-system for ultra-long term preservation and its issues
-- Development of the WASHI in digital era -- Toshio Kobayashi (SIT) SDM2016-142 |
The amount of information created increases to explosion due to the great convenience and power of digital technology. ... [more] | SDM2016-142 pp.17-22 |
| MRIS, ITE-MMS | 2016-10-20 16:10 |
Fukuoka | Nishijin Plaza | Resistive switching in planar metal/NiO bilayer system with low voltage operation Yosuke Nakano, Kyota Okabe, Takashi Kimura (Kyushu Univ.) |
Development of nano-scale non-volatile memory is responsible for corresponding to increasing of amount of information du... [more] | |
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