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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ITE-IDY, EID, IEE-EDD |
2013-01-24 15:16 |
Shizuoka |
Shizuoka Univ. |
Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) EID2012-21 |
We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quant... [more] |
EID2012-21 pp.49-52 |
ED, LQE, CPM |
2012-11-30 14:55 |
Osaka |
Osaka City University |
The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115 |
Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficienc... [more] |
ED2012-87 CPM2012-144 LQE2012-115 pp.103-108 |
EID, ITE-IDY, IEE-EDD |
2012-01-27 14:38 |
Akita |
Akita University |
Measurement of two-wavelength excited photoluminescence in Ba3Si6O12N2:Eu2+ phodphor Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Yasuo Shimomura (STRC, Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2011-19 |
One candidate of efficient and reliable phosphor materials, Ba3Si6O12N2:Eu2+, is suitable for the combination with UV- t... [more] |
EID2011-19 pp.21-24 |
ITE-IDY, EID, IEIJ-SSL, IEE-EDD |
2010-01-28 14:20 |
Fukuoka |
Kyusyu Univ. (Chikushi Campus) |
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) |
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an ... [more] |
EID2009-55 pp.33-36 |
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