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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-01-28 15:05 |
Online | Online | [Invited Talk]
Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui (Hokkaido Univ.)  SDM2020-52 |
We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si h... [more] | SDM2020-52 pp.13-16 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 15:05 |
Osaka | Central Electric Club | Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35 |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] | SDM2016-67 ICD2016-35 pp.123-126 |
| SDM, ICD | 2015-08-25 11:45 |
Kumamoto | Kumamoto City | Threshold Voltage and Current Variability of Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2015-68 ICD2015-37 |
[more] | SDM2015-68 ICD2015-37 pp.59-62 |
| SDM, ED | 2015-02-06 10:15 |
Hokkaido | Hokkaido Univ. | Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices Shinya Inoue, Seiya Kasai (Hokkaido Univ.), Agung Setiadi, Megumi Akai-Kasaya (Osaka Univ.) ED2014-148 SDM2014-157 |
For detection of charge dynamics of single molecules, we investigate current noises in GaAs nanowire FET and Carbon nano... [more] | ED2014-148 SDM2014-157 pp.57-61 |
| SDM, EID | 2014-12-12 10:00 |
Kyoto | Kyoto University | Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108 |
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] | EID2014-13 SDM2014-108 pp.1-6 |
| SDM, EID | 2014-12-12 10:15 |
Kyoto | Kyoto University | Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109 |
We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] | EID2014-14 SDM2014-109 pp.7-11 |
| CPM, ED, SDM | 2014-05-29 10:55 |
Aichi | Characterization and analysis of hysteresis properties in insulated-gate GaAs-based nanowire FETs Ryota Kuroda, Xiang Yin, Masaki Sato, Seiya Kasai (Hokkaido Univ.) ED2014-36 CPM2014-19 SDM2014-34 |
We fabricate SiN- and Al2O3-gate GaAs etched nanowire FETs, characterized dynamic hysteresis properties in their transfe... [more] | ED2014-36 CPM2014-19 SDM2014-34 pp.91-96 |
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| SDM | 2013-12-13 16:40 |
Nara | NAIST | Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] | SDM2013-131 pp.91-96 |
| SDM, ED | 2013-02-27 17:20 |
Hokkaido | Hokkaido Univ. | Field-Assisted Self -Assembly Process of InAs nanowires Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) ED2012-136 SDM2012-165 |
Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been inves... [more] | ED2012-136 SDM2012-165 pp.43-46 |
| SDM | 2012-11-16 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures Tomofumi Zushi (Waseda Univ./JST), Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba/JST), Takanobu Watanabe (Waseda Univ./JST) SDM2012-108 |
We perform a series of molecular dynamics (MD) simulations to investigate the transport process of heat in a hotspot reg... [more] | SDM2012-108 pp.47-52 |
| SDM | 2012-06-21 15:55 |
Aichi | VBL, Nagoya Univ. | Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation -- Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) SDM2012-58 |
In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls i... [more] | SDM2012-58 pp.81-85 |
| ED, SDM | 2012-02-08 13:50 |
Hokkaido | Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174 |
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] | ED2011-157 SDM2011-174 pp.89-93 |
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| SDM | 2011-12-16 16:20 |
Nara | NAIST | Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146 |
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] | SDM2011-146 pp.77-82 |
| SDM | 2011-11-11 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121 |
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] | SDM2011-121 pp.33-38 |
| ED | 2011-07-29 16:10 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Characterization of Low-Frequency Noise in SiNx Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Kensuke Miura, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2011-43 |
Noise in a semiconductor field-effect transistor (FET) is going to increase, as the device size is reduced. The importan... [more] | ED2011-43 pp.31-34 |
| SDM | 2010-12-17 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 |
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] | SDM2010-185 pp.1-6 |
| SDM | 2010-11-12 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183 |
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] | SDM2010-183 pp.65-69 |
| ED | 2010-09-13 14:30 |
Fukuoka | Kyushu Institute of Technology(Wakamatsu) | THz sensing by GaAs-based nanowire FET and its enhancement utilizing stochastic resonance Seiya Kasai (Hokkaido Univ./JST), Kensuke Miura, Yuta Shiratori (Hokkaido Univ.) ED2010-125 |
THz signal sensing using GaAs nanowire FETs formed by lithography and chemical etching is described. THz photocurrent is... [more] | ED2010-125 pp.13-17 |
| SDM | 2010-06-22 09:55 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2010-34 |
Process technology with atomic-scale precision is indispensable for fabrication of silicon nanowire MOSFETs. We present ... [more] | SDM2010-34 pp.5-10 |
| SDM | 2010-06-22 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | An Analysis of Electrical Carrier Mobility of Silicon Nanowire FET Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet (Tokyo Inst. of Tech.), Kenji Ohmori (Waseda Univ.), Kenji Natori, Hiroshi Iwai (Tokyo Inst. of Tech.), Keisaku Yamada (Waseda Univ.) SDM2010-35 |
Silicon nanowire FET is expected to have high ION and low IOFF compared with planar FET, which results in low-power cons... [more] | SDM2010-35 pp.11-16 |
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